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INCHANGE Semiconductor
oltage
oltage
isc
Silicon PNP Power Transistor
DESCRIPTION
·High Collector Current-I
·Low Saturation Voltage -
: V
CE(sat)
·Good Linearity of h
·Complement to Type 2SD1348
APPLICATIONS
·Designed for power supplies, relay drivers, lamp drivers,
electrical equipment applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
= -
4.0A
C
= -0.5V(Max)@ I
FE
= -
2A, I
=
C
-0.1A
B
℃℃℃℃)
isc
Product Specification
2SB986
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -4 A
ICP Collector Current-Pulse -6 A
PC
TJ Junction Temperature 150
T
stg
Collector-Base V
Collector-Emitter V
Emitter-Base Voltage -6 V
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
Storage Temperature Range -55~150
-60 V
-50 V
1.2
10
W
℃
℃
isc Website：：：：www.iscsemi.cn
Page 2
INCHANGE Semiconductor
oltage
isc
Silicon PNP Power Transistor
isc
Product Specification
2SB986
ELECTRICAL CHARACTERISTICS
TC=25℃℃℃℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Current-Gain—Bandwidth Product IC= -50mA ; VCE= -10V 150 MHz
Collector-Base Breakdown V
Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -50 V
Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 -6 V
Collector-Emitter Saturation Voltage IC= -2.0A; IB= -0.1A -0.7 V
)
sat
Base-Emitter Saturation Voltage IC= -2.0A; IB= -0.1A -1.2 V
)
sat
Collector Cutoff Current VCB= -40V; IE= 0 -1.0 mA
Emitter Cutoff Current VEB= -4V; IC= 0 -1.0 mA
DC Current Gain IC= -0.1A ; VCE= -2V 100 560
DC Current Gain IC= -3A ; VCE= -2V 40
IC= -10μA; IE= 0 -60 V
COB Output Capacitance
h
Classifications
FE-1
R S T U
100-200 140-280 200-400 280-560
isc Website：：：：www.iscsemi.cn
IE= 0; VCB= -10V, f
2
= 1MHz
test
39 pF
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