Datasheet N83C196KD20, N87C196KD20, N87C196KD, N83C196KD, S83C196KD20 Datasheet (Intel Corporation)

...
Page 1
*Other brands and names are the property of their respective owners.
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
November 1994COPYRIGHT©INTEL CORPORATION, 1995 Order Number: 272145-003
8XC196KD/8XC196KD20
87C196KDÐ32 Kbytes of On-Chip OTPROM
83C196KDÐ32 Kbytes of ROM
Y
16 MHz and 20 MHz Available
Y
1000 Byte Register RAM
Y
Register-to-Register Architecture
Y
28 Interrupt Sources/16 Vectors
Y
Peripheral Transaction Server
Y
1.4 ms 16 x 16 Multiply (20 MHz)
Y
2.4 ms 32/16 Divide (20 MHz)
Y
Powerdown and Idle Modes
Y
Five 8-Bit I/O Ports
Y
16-Bit Watchdog Timer
Y
Dynamically Configurable 8-Bit or 16-Bit Buswidth
Y
Full Duplex Serial Port
Y
High Speed I/O Subsystem
Y
16-Bit Timer
Y
16-Bit Up/Down Counter with Capture
Y
3 Pulse-Width-Modulated Outputs
Y
Four 16-Bit Software Timers
Y
8- or 10-Bit A/D Converter with Sample/Hold
Y
HOLD/HLDA Bus Protocol
Y
OTP One-Time Programmable Version
The 8XC196KD 16-bit microcontroller is a high performance member of the MCSÉ96 microcontroller family. The 8XC196KD is an enhanced 80C196KC device with 1000 bytes RAM, 16 MHz operation and an optional 32 Kbytes of ROM/EPROM. Intel’s CHMOS III process provides a high performance processor along with low power consumption.
The 8XC196KD has a maximum guaranteed frequency of 16 MHz. The 8XC196KD20 has a maximum guaran­teed frequency of 20 MHz. Unless otherwise noted, all references to the 8XC196KD also refer to the 8XC196KD20.
Four high-speed capture inputs are provided to record times when events occur. Six high-speed outputs are available for pulse or waveform generation. The high-speed output can also generate four software timers or start an A/D conversion. Events can be based on the timer or up/down counter.
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8XC196KD/8XC196KD20
272145– 1
Figure 1. 8XC196KD Block Diagram
87C196KD ENHANCED FEATURE SET OVER THE 87C196KC
1. The 87C196KD has twice the RAM and twice the OTPROM space of the 87C196KC.
2. The vertical windowing scheme has been extend­ed to allow all 1000 bytes of register RAM to be windowed into the lower register file.
IOC3 (0CH HWIN1 READ/WRITE)
272145– 2
NOTE:
*RSVÐReserved bits must be
e
0
Figure 2. 87C196KD New SFR Bit
(CLKOUT Disable)
2
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8XC196KD/8XC196KD20
8XC196KD VERTICAL WINDOWING MAP
Table 1. 128-Byte Windows
Address to Device
WSR Contents
Remap Series
0380H KD X001 0111Be17H
0300H KD X001 0110Be16H
0280H KD X001 0101Be15H
0200H KD X001 0100Be14H
0180H KC, KD X001 0011Be13H
0100H KC, KD X001 0010Be12H
0080H KC, KD X001 0001Be11H
0000H KC, KD X001 0000Be10H
Window in Lower Register File: 80H–FFH
Table 2. 64-Byte Windows
Address to Device
WSR Contents
Remap Series
03C0H KD X010 1111Be2FH
0380H KD X010 1110Be2EH
0340H KD X010 1101Be2DH
0300H KD X010 1100Be2CH
02C0H KD X010 1011Be2BH
0280H KD X010 1010Be2AH
0240H KD X010 1001Be29H
0200H KD X010 1000Be28H
01C0H KC, KD X010 0111Be27H
0180H KC, KD X010 0110Be26H
0140H KC, KD X010 0101Be25H
0100H KC, KD X010 0100Be24H
00C0H KC, KD X010 0011Be23H
0080H KC, KD X010 0010Be22H
0040H KC, KD X010 0001Be21H
0000H KC, KD X010 0000Be20H
Window in Lower Register File: C0H–FFH
Table 3. 32-Byte Windows
Address to Device
WSR Contents
Remap Series
03E0H KD X101 1111Be5FH
03C0H KD X101 1110Be5EH
03A0H KD X101 1101Be5DH
0380H KD X101 1100Be5CH
0360H KD X101 1011Be5BH
0340H KD X101 1010Be5AH
0320H KD X101 1001Be59H
0300H KD X101 1000Be58H
02E0H KD X101 0111Be57H
02C0H KD X101 0110Be56H
02A0H KD X101 0101Be55H
0280H KD X101 0100Be54H
0260H KD X101 0011Be53H
0240H KD X101 0010Be52H
0220H KD X101 0001Be51H
0200H KD X101 0000Be50H
01E0H KC, KD X100 1111Be4FH
01C0H KC, KD X100 1110Be4EH
01A0H KC, KD X100 1101Be4DH
0180H KC, KD X100 1100Be4CH
0160H KC, KD X100 1011Be4BH
0140H KC, KD X100 1010Be4AH
0120H KC, KD X100 1001Be49H
0100H KC, KD X100 1000Be48H
00E0H KC, KD X100 0111Be47H
00C0H KC, KD X100 0110Be46H
00A0H KC, KD X100 0101Be45H
0080H KC, KD X100 0100Be44H
0060H KC, KD X100 0011Be43H
0040H KC, KD X100 0010Be42H
0020H KC, KD X100 0001Be41H
0000H KC, KD X100 0000Be40H
Window in Lower Register File: E0H–FFH
3
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8XC196KD/8XC196KD20
PROCESS INFORMATION
This device is manufactured on PX29.5 or PX29.9, a CHMOS III process. Additional process and reliabili­ty information is available in Intel’s
Components
Quality and Reliability Handbook,
Order Number
210997.
272145– 19
EXAMPLE: N87C196KD20 is 68-Lead PLCC OTPROM, 20 MHz. For complete package dimensional data, refer to the Intel Packaging Handbook (Order Number 240800).
NOTE:
1. EPROMs are available as One Time Programmable (OTPROM) only.
Figure 3. The 8XC196KD Family Nomenclature
Table 4. Thermal Characteristics
Package
i
ja
i
jc
Type
PLCC 35§C/W 13§C/W
QFP 56§C/W 12§C/W
SQFP 68§C/W 15.5§C/W
All thermal impedance data is approximate for static air conditions at 1W of power dissipation. Values will change depending on operation conditions and application. See the Intel
Packaging Handbook
(order number 240800) for a
description of Intel’s thermal impedance test methodology.
Table 5. 8XC196KD Memory Map
Description Address
External Memory or I/O 0FFFFH
0A000H
Internal ROM/OTPROM or External 9FFFH Memory (Determined by EA
)
2080H
Reserved. Must contain FFH. 207FH (Note 5)
205EH
PTS Vectors 205DH
2040H
Upper Interrupt Vectors 203FH
2030H
ROM/OTPROM Security Key 202FH
2020H
Reserved. Must contain FFH. 201FH (Note 5)
201AH
Reserved. Must Contain 20H 2019H (Note 5)
CCB 2018H
Reserved. Must contain FFH. 2017H (Note 5)
2014H
Lower Interrupt Vectors 2013H
2000H
Port 3 and Port 4 1FFFH
1FFEH
External Memory 1FFDH
0400H
1000 Bytes Register RAM (Note 1) 03FFH
0018H
CPU SFR’s (Notes 1, 3) 0017H
0000H
NOTES:
1. Code executed in locations 0000H to 03FFH will be forced external.
2. Reserved memory locations must contain 0FFH unless noted.
3. Reserved SFR bit locations must contain 0.
4. Refer to 8XC196KC for SFR descriptions.
5. WARNING: Reserved memory locations must not be written or read. The contents and/or function of these lo­cations may change with future revisions of the device. Therefore, a program that relies on one or more of these locations may not function properly.
4
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8XC196KD/8XC196KD20
272145– 3
Figure 4. 68-Pin PLCC Package
5
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8XC196KD/8XC196KD20
272145– 4
NOTE:
N.C. means No Connect (do not connect these pins).
Figure 5. 80-Pin QFP Package
6
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8XC196KD/8XC196KD20
272145– 20
NOTE:
N.C. means No Connect (do not connect these pins).
Figure 6. 80-Pin SQFP Package
7
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8XC196KD/8XC196KD20
PIN DESCRIPTIONS
Symbol Name and Function
V
CC
Main supply voltage (5V).
V
SS
Digital circuit ground (0V). There are multiple VSSpins, all of which must be connected.
V
REF
Reference voltage for the A/D converter (5V). V
REF
is also the supply voltage to the analog portion of the A/D converter and the logic used to read Port 0. Must be connected for A/D and Port 0 to function.
ANGND Reference ground for the A/D converter. Must be held at nominally the same potential as
V
SS
.
V
PP
Timing pin for the return from powerdown circuit. This pin also supplies the programming voltage on the EPROM device.
XTAL1 Input of the oscillator inverter and of the internal clock generator.
XTAL2 Output of the oscillator inverter.
CLKOUT Output of the internal clock generator. The frequency of CLKOUT is (/2 the oscillator
frequency.
RESET Reset input and open drain output.
BUSWIDTH Input for buswidth selection. If CCR bit 1 is a one, this pin selects the bus width for the bus
cycle in progress. If BUSWIDTH is a 1, a 16-bit bus cycle occurs. If BUSWIDTH isa0an 8-bit cycle occurs. If CCR bit 1 is a 0, the bus is always an 8-bit bus.
NMI A positive transition causes a vector through 203EH.
INST Output high during an external memory read indicates the read is an instruction fetch. INST
is valid throughout the bus cycle. INST is activated only during external memory accesses and output low for a data fetch.
EA Input for memory select (External Access). EA equal high causes memory accesses to
locations 2000H through 9FFFH to be directed to on-chip ROM/EPROM. EA
equal low causes accesses to those locations to be directed to off-chip memory. Also used to enter programming mode.
ALE/ADV Address Latch Enable or Address Valid output, as selected by CCR. Both pin options
provide a signal to demultiplex the address from the address/data bus. When the pin is ADV
, it goes inactive high at the end of the bus cycle. ALE/ADV is activated only during
external memory accesses.
RD Read signal output to external memory. RD is activated only during external memory reads.
WR/WRL Write and Write Low output to external memory, as selected by the CCR. WR will go low for
every external write, while WRL
will go low only for external writes where an even byte is
being written. WR
/WRL is activated only during external memory writes.
BHE/WRH Bus High Enable or Write High output to external memory, as selected by the CCR. BHE will
go low for external writes to the high byte of the data bus. WRH
will go low for external
writes where an odd byte is being written. BHE
/WRH is activated only during external
memory writes.
READY Ready input to lengthen external memory cycles, for interfacing to slow or dynamic
memory, or for bus sharing. When the external memory is not being used, READY has no effect.
HSI Inputs to High Speed Input Unit. Four HSI pins are available: HSI.0, HSI.1, HSI.2 and HSI.3.
Two of them (HSI.2 and HSI.3) are shared with the HSO Unit.
HSO Outputs from High Speed Output Unit. Six HSO pins are available: HSO.0, HSO.1, HSO.2,
HSI.3, HSO.4 and HSO.5. Two of them (HSO.4 and HSO.5) are shared with the HSI Unit.
8
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8XC196KD/8XC196KD20
PIN DESCRIPTIONS (Continued)
Symbol Name and Function
Port 0 8-bit high impedance input-only port. These pins can be used as digital inputs and/or as
analog inputs to the on-chip A/D converter.
Port 1 8-bit quasi-bidirectional I/O port.
Port 2 8-bit multi-functional port. All of its pins are shared with other functions in the 8XC196KD.
Pins 2.6 and 2.7 are quasi-bidirectional.
Ports 3 and 4 8-bit bidirectional I/O ports with open drain outputs. These pins are shared with the
multiplexed address/data bus which has strong internal pullups.
HOLD Bus Hold input requesting control of the bus.
HLDA Bus Hold acknowledge output indicating release of the bus.
BREQ Bus Request output activated when the bus controller has a pending external memory
cycle.
PMODE Determines the EPROM programming mode.
PACT A low signal in Auto Programming mode indicates that programming is in process. A high
signal indicates programming is complete.
PALE A falling edge in Slave Programming Mode and Auto Configuration Byte Programming
Mode indicates that ports 3 and 4 contain valid programming address/command information (input to slave).
PROG A falling edge in Slave Programming Mode indicates that ports 3 and 4 contain valid
programming data (input to slave).
PVER A high signal in Slave Programming Mode and Auto Configuration Byte Programming
Mode indicates the byte programmed correctly.
CPVER Cummulative Program Output Verification. Pin is high if all locations have programmed
correctly since entering a programming mode.
AINC Auto Increment. Active low input enables the auto increment mode. Auto increment allows
reading or writing sequential EPROM locations without address transactions across the PBUS for each read or write.
9
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8XC196KD/8XC196KD20
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Ambient Temperature
Under Bias ААААААААААААААААА
b
55§Ctoa125§C
Storage Temperature ААААААААААb65§Ctoa150§C
Voltage On Any Pin to V
SS
Except EA and VPPААААААААААb0.5V toa7.0V
(1)
Voltage from EA or
V
PP
to VSSor ANGND АААААААb0.5V toa13.00V
Power Dissipation ААААААААААААААААААААААА1.5W
(2)
NOTES:
1. This includes V
PP
and EA on ROM or CPU only devices.
2. Power dissipation is based on package heat transfer lim­itations, not device power consumption.
NOTICE: This data sheet contains information on products in the sampling and initial production phases of development. It is valid for the devices indicated in the revision history. The specifications are subject to change without notice.
*
WARNING: Stressing the device beyond the ‘‘Absolute Maximum Ratings’’ may cause permanent damage. These are stress ratings only. Operation beyond the ‘‘Operating Conditions’’ is not recommended and ex­tended exposure beyond the ‘‘Operating Conditions’’ may affect device reliability.
OPERATING CONDITIONS
Symbol Description Min Max Units
T
A
Ambient Temperature Under Bias Commercial Temp. 0
a
70
§
C
V
CC
Digital Supply Voltage 4.50 5.50 V
V
REF
Analog Supply Voltage 4.00 5.50 V
ANGND Analog Ground Voltage V
SS
b
0.4 V
SS
a
0.4 V
(1)
F
OSC
Oscillator Frequency (8XC196KD) 8 16 MHz
F
OSC
Oscillator Frequency (8XC196KD20) 8 20 MHz
NOTE:
1. ANGND and V
SS
should be nominally at the same potential.
DC CHARACTERISTICS (Over Specified Operating Conditions)
Symbol Description Min Max Units Test Conditions
V
IL
Input Low Voltage
b
0.5 0.8 V
V
IH
Input High Voltage (Note 1) 0.2 V
CC
a
1.0 V
CC
a
0.5 V
V
HYS
Hysteresis on RESET 300 mV V
CC
e
5.0V
V
IH1
Input High Voltage on XTAL 1 0.7 V
CC
V
CC
a
0.5 V
V
IH2
Input High Voltage on RESET 2.2 V
CC
a
0.5 V
V
OL
Output Low Voltage 0.3 V I
OL
e
200 mA
0.45 V I
OL
e
2.8 mA
1.5 V I
OL
e
7mA
V
OL1
Output Low Voltage
0.8 V
I
OL
ea
0.4 mA
in RESET on P2.5 (Note 2)
V
OH
Output High Voltage V
CC
b
0.3 V I
OH
eb
200 mA
(Standard Outputs) (Note 4) V
CC
b
0.7 V I
OH
eb
3.2 mA
V
CC
b
1.5 V I
OH
eb
7mA
V
OH1
Output High Voltage V
CC
b
0.3 V I
OH
eb
10 mA
(Quasi-bidirectional Outputs) V
CC
b
0.7 V I
OH
eb
30 mA
(Note 3) V
CC
b
1.5 V I
OH
eb
60 mA
10
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8XC196KD/8XC196KD20
DC CHARACTERISTICS (Over Specified Operating Conditions) (Continued)
Symbol Description Min Typ Max Units Test Conditions
I
OH1
Logical 1 Output Current in Reset
b
0.8 mA V
IH
e
V
CC
b
1.5V on P2.0. Do not exceed this or device may enter test modes.
I
IL2
Logical 0 Input Current in Reset
b
12.0 mA V
IN
e
0.45V on P2.0. Maximum current that must be sunk by external device to ensure test mode entry.
I
IH1
Logical 1 Input Current. Maximum
a
200 mAV
IN
e
2.4V current that external device must source to initiate NMI.
I
LI
Input Leakage Current (Std.
g
10 mA0kV
IN
k
V
CC
b
0.3V
Inputs) (Note 5)
I
LI1
Input Leakage Current (Port 0)
g
3 mA0kV
IN
k
V
REF
I
TL
1 to 0 Transition Current (QBD
b
650 mAV
IN
e
2.0V Pins)
I
IL
Logical 0 Input Current (QBD Pins)
b
70 mAV
IN
e
0.45V
I
IL1
AD Bus in Reset
b
70 mAV
IN
e
0.45V
I
CC
Active Mode Current in Reset 65 75 mA XTAL1e16 MHz
(8XC196KD)
V
CC
e
V
PP
e
V
REF
e
5.5V
I
CC
Active Mode Current in Reset 80 92 mA XTAL1e20 MHz
(8XC196KD20)
V
CC
e
V
PP
e
V
REF
e
5.5V
I
IDLE
Idle Mode Current (8XC196KD) 17 25 mA XTAL1e16 MHz
V
CC
e
V
PP
e
V
REF
e
5.5V
I
IDLE
Idle Mode Current (8XC196KD20) 21 30 mA XTAL1e20 MHz
V
CC
e
V
PP
e
V
REF
e
5.5V
I
PD
Powerdown Mode Current 8 15 mAV
CC
e
V
PP
e
V
REF
e
5.5V
I
REF
A/D Converter Reference Current 2 5 mA V
CC
e
V
PP
e
V
REF
e
5.5V
R
RST
Reset Pullup Resistor 6K 65K X V
CC
e
5.5V, V
IN
e
4.0V
C
S
Pin Capacitance (Any Pin to VSS)10pF
NOTES:
1. All pins except RESET and XTAL1.
2. Violating these specifications in Reset may cause the part to enter test modes.
3. QBD (Quasi-bidirectional) pins include Port 1, P2.6 and P2.7.
4. Standard Outputs include AD0 – 15, RD
,WR, ALE, BHE, INST, HSO pins, PWM/P2.5, CLKOUT, RESET, Ports 3 and 4,
TXD/P2.0 and RXD (in serial mode 0). The V
OH
specification is not valid for RESET. Ports 3 and 4 are open-drain outputs.
5. Standard Inputs include HSI pins, READY, BUSWIDTH, RXD/P2.1, EXTINT/P2.2, T2CLK/P2.3 and T2RST/P2.4.
6. Maximum current per pin must be externally limited to the following values if V
OL
is held above 0.45V or VOHis held
below V
CC
b
0.7V:
I
OL
on Output pins: 10 mA
I
OH
on quasi-bidirectional pins: self limiting
I
OH
on Standard Output pins: 10 mA
7. Maximum current per bus pin (data and control) during normal operation is
g
3.2 mA.
8. During normal (non-transient) conditions the following total current limits apply: Port 1, P2.6 I
OL
:29mA IOHis self limiting
HSO, P2.0, RXD, RESET
IOL:29mA IOH:26mA
P2.5, P2.7, WR
, BHE IOL:13mA IOH:11mA
AD0–AD15 I
OL
:52mA IOH:52mA
RD
, ALE, INST –CLKOUT IOL:13mA IOH:13mA
11
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8XC196KD/8XC196KD20
272145– 5
ICCMaxe4.13cFrequencya9mA I
CC
Type3.50cFrequencya9mA
I
IDLE
Maxe1.25cFrequencya5mA
I
IDLE
Type0.88cFrequencya3mA
NOTE:
Frequencies below 8 MHz are shown for reference only; no testing is performed.
Figure 7. ICCand I
IDLE
vs Frequency
AC CHARACTERISTICS
For use over specified operating conditions.
Test Conditions: Capacitive load on all pinse100 pF, Rise and fall timese10 ns, F
OSC
e
16/20 MHz
The system must meet these specifications to work with the 80C196KD:
Symbol Description Min Max Units Notes
T
AVYV
Address Valid to READY Setup 2 T
OSC
b
68 ns
T
YLYH
Non READY Time No upper limit ns
T
CLYX
READY Hold after CLKOUT Low 0 T
OSC
b
30 ns (Note 1)
T
LLYX
READY Hold after ALE Low T
OSC
b
15 2 T
OSC
b
40 ns (Note 1)
T
AVGV
Address Valid to Buswidth Setup 2 T
OSC
b
68 ns
T
CLGX
Buswidth Hold after CLKOUT Low 0 ns
T
AVDV
Address Valid to Input Data Valid 3 T
OSC
b
55 ns (Note 2)
T
RLDV
RD Active to Input Data Valid T
OSC
b
22 ns (Note 2)
T
CLDV
CLKOUT Low to Input Data Valid T
OSC
b
45 ns
T
RHDZ
End of RD to Input Data Float T
OSC
ns
T
RXDX
Data Hold after RD Inactive 0 ns
NOTES:
1. If max is exceeded, additional wait states will occur.
2. If wait states are used, add 2 T
OSC
* N, where Nenumber of wait states.
12
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8XC196KD/8XC196KD20
AC CHARACTERISTICS (Continued)
For use over specified operating conditions.
Test Conditions: Capacitive load on all pins
e
100 pF, Rise and fall timese10 ns, F
OSC
e
16/20 MHz
The 80C196KD will meet these specifications:
Symbol Description Min Max Units Notes
F
XTAL
Frequency on XTAL1 (8XC196KD) 8 16 MHz (Note 1)
F
XTAL
Frequency on XTAL1 (8XC196KD20) 8 20 MHz (Note 1)
T
OSC
I/F
XTAL
(8XC196KD) 62.5 125 ns
T
OSC
I/F
XTAL
(8XC196KD20) 50 125 ns
T
XHCH
XTAL1 High to CLKOUT High or Low
a
20
a
110 ns
T
CLCL
CLKOUT Cycle Time 2 T
OSC
ns
T
CHCL
CLKOUT High Period T
OSC
b
10 T
OSC
a
15 ns
T
CLLH
CLKOUT Falling Edge to ALE Rising
b
5
a
15 ns
T
LLCH
ALE Falling Edge to CLKOUT Rising
b
20
a
15 ns
T
LHLH
ALE Cycle Time 4 T
OSC
ns (Note 4)
T
LHLL
ALE High Period T
OSC
b
10 T
OSC
a
10 ns
T
AVLL
Address Setup to ALE Falling Edge T
OSC
b
15
T
LLAX
Address Hold after ALE Falling Edge T
OSC
b
35 ns
T
LLRL
ALE Falling Edge to RD Falling Edge T
OSC
b
30 ns
T
RLCL
RD Low to CLKOUT Falling Edge
a
4
a
30 ns
T
RLRH
RD Low Period T
OSC
b
5 ns (Note 4)
T
RHLH
RD Rising Edge to ALE Rising Edge T
OSC
T
OSC
a
25 ns (Note 2)
T
RLAZ
RD Low to Address Float
a
5ns
T
LLWL
ALE Falling Edge to WR Falling Edge T
OSC
b
10 ns
T
CLWL
CLKOUT Low to WR Falling Edge 0
a
25 ns
T
QVWH
Data Stable to WR Rising Edge T
OSC
b
23 (Note 4)
T
CHWH
CLKOUT High to WR Rising Edge
b
5
a
15 ns
T
WLWH
WR Low Period T
OSC
b
20 ns (Note 4)
T
WHQX
Data Hold after WR Rising Edge T
OSC
b
25 ns
T
WHLH
WR Rising Edge to ALE Rising Edge T
OSC
b
10 T
OSC
a
15 ns (Note 2)
T
WHBX
BHE, INST after WR Rising Edge T
OSC
b
10 ns
T
WHAX
AD8–15 HOLD after WR Rising T
OSC
b
30 ns (Note 3)
T
RHBX
BHE, INST after RD Rising Edge T
OSC
b
10 ns
T
RHAX
AD8–15 HOLD after RD Rising T
OSC
b
25 ns (Note 3)
NOTES:
1. Testing performed at 8 MHz. However, the device is static by design and will typically operate below 1 Hz.
2. Assuming back-to-back bus cycles.
3. 8-Bit bus only.
4. If wait states are used, add 2 T
OSC
* N, where Nenumber of wait states.
13
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8XC196KD/8XC196KD20
System Bus Timings
272145– 6
14
Page 15
8XC196KD/8XC196KD20
READY Timings (One Wait State)
272145– 7
Buswidth Timings
272145– 8
15
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8XC196KD/8XC196KD20
HOLD/HLDA TIMINGS
Symbol Description Min Max Units Notes
T
HVCH
HOLD Setup
a
55 ns (Note 1)
T
CLHAL
CLKOUT Low to HLDA Low
b
15
a
15 ns
T
CLBRL
CLKOUT Low to BREQ Low
b
15
a
15 ns
T
HALAZ
HLDA Low to Address Float
a
15 ns
T
HALBZ
HLDA Low to BHE, INST, RD,WRWeakly Driven
a
20 ns
T
CLHAH
CLKOUT Low to HLDA High
b
15
a
15 ns
T
CLBRH
CLKOUT Low to BREQ High
b
15
a
15 ns
T
HAHAX
HLDA High to Address No Longer Float
b
15 ns
T
HAHBV
HLDA High to BHE, INST, RD,WRValid
b
10
a
15 ns
T
CLLH
CLKOUT Low to ALE High
b
5
a
15 ns
NOTE:
1. To guarantee recognition at next clock.
DC SPECIFICATIONS IN HOLD
Description Min Max Units
Weak Pullups on ADV,RD, 50K 250K V
CC
e
5.5V, V
IN
e
0.45V
WR
,WRL, BHE
Weak Pulldowns on ALE, INST 10K 50K V
CC
e
5.5V, V
IN
e
2.4
272145– 9
16
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8XC196KD/8XC196KD20
MAXIMUM HOLD LATENCY
Bus Cycle Type
Internal Execution 1.5 States
16-Bit External Execution 2.5 States
8-Bit External Execution 4.5 States
EXTERNAL CLOCK DRIVE (8XC196KD)
Symbol Parameter Min Max Units
1/T
XLXL
Oscillator Frequency 8 16.0 MHz
T
XLXL
Oscillator Period 62.5 125 ns
T
XHXX
High Time 20 ns
T
XLXX
Low Time 20 ns
T
XLXH
Rise Time 10 ns
T
XHXL
Fall Time 10 ns
EXTERNAL CLOCK DRIVE (8XC196KD20)
Symbol Parameter Min Max Units
1/T
XLXL
Oscillator Frequency 8 20.0 MHz
T
XLXL
Oscillator Period 50 125 ns
T
XHXX
High Time 17 ns
T
XLXX
Low Time 17 ns
T
XLXH
Rise Time 8 ns
T
XHXL
Fall Time 8 ns
EXTERNAL CLOCK DRIVE WAVEFORMS
272145– 10
17
Page 18
8XC196KD/8XC196KD20
EXTERNAL CRYSTAL CONNECTIONS
272145– 13
NOTE:
Keep oscillator components close to chip and use short, direct traces to XTAL1, XTAL2 and V
SS
. When
using ceramic crystals, C1
e
20 pF, C2e20 pF. When using ceramic resonators consult manufacturer for recommended capacitor values.
EXTERNAL CLOCK CONNECTIONS
272145– 14
NOTE:
*Required if TTL driver used.
Not needed if CMOS driver is used.
AC TESTING INPUT, OUTPUT WAVEFORMS
272145– 11 AC Testing inputs are driven at 2.4V for a Logic ‘‘1’’ and 0.45V for a Logic ‘‘0’’ Timing measurements are made at 2.0V for a Logic ‘‘1’’ and 0.8V for a Logic ‘‘0’’.
FLOAT WAVEFORMS
272145– 12 For Timing Purposes a Port Pin is no Longer Floating when a 150 mV change from Load Voltage Occurs, and Begins to Float when a 150 mV change from the Loaded V
OH/VOL
Level occurs;
I
OL/IOH
e
g
15 mA.
EXPLANATION OF AC SYMBOLS
Each symbol is two pairs of letters prefixed by ‘‘T’’ for time. The characters in a pair indicate a signal and its condition, respectively. Symbols represent the time between the two signal/condition points.
Conditions:
HÐ High
LÐ Low
VÐ Valid
XÐ No Longer Valid
ZÐ Floating
Signals:
AÐ Address
BÐ BHE
CÐ CLKOUT
DÐ DATA
GÐ Buswidth
HÐ HOLD
HAÐ HLDA
LÐ ALE/ADV
BRÐ BREQ
RÐ RD
WÐ WR/WRH/WRL
XÐ XTAL1
YÐ READY
QÐ Data Out
18
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8XC196KD/8XC196KD20
AC CHARACTERISTICSÐSERIAL PORTÐSHIFT REGISTER MODE
SERIAL PORT TIMINGÐSHIFT REGISTER MODE (MODE 0)
Symbol Parameter Min Max Units
T
XLXL
Serial Port Clock Period (BRRt8002H) 6 T
OSC
ns
T
XLXH
Serial Port Clock Falling Edge 4 T
OSC
b
50 4 T
OSC
a
50 ns
to Rising Edge (BRR
t
8002H)
T
XLXL
Serial Port Clock Period (BRRe8001H) 4 T
OSC
ns
T
XLXH
Serial Port Clock Falling Edge 2 T
OSC
b
50 2 T
OSC
a
50 ns
to Rising Edge (BRR
e
8001H)
T
QVXH
Output Data Valid to Clock Rising Edge 2 T
OSC
b
50 ns
T
XHQX
Output Data Hold after Clock Rising Edge 2 T
OSC
b
50 ns
T
XHQV
Next Output Data Valid after Clock Rising Edge 2 T
OSC
a
50 ns
T
DVXH
Input Data Setup to Clock Rising Edge T
OSC
a
50 ns
T
XHDX
Input Data Hold after Clock Rising Edge 0 ns
T
XHQZ
Last Clock Rising to Output Float 1 T
OSC
ns
WAVEFORMÐSERIAL PORTÐSHIFT REGISTER MODE
SERIAL PORT WAVEFORMÐSHIFT REGISTER MODE (MODE 0)
272145– 15
19
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8XC196KD/8XC196KD20
A to D CHARACTERISTICS
The A/D converter is ratiometric, so absolute accuracy is dependent on the accuracy and stability of V
REF
.
10-BIT MODE A/D OPERATING CONDITIONS
Symbol Description Min Max Units
T
A
Ambient Temperature Commercial Temp. 0
a
70
§
C
V
CC
Digital Supply Voltage 4.50 5.50 V
V
REF
Analog Supply Voltage 4.00 5.50 V
ANGND Analog Ground Voltage V
SS
b
0.40 V
CC
a
0.40 V
T
SAM
Sample Time 1.0 ms
(1)
T
CONV
Conversion Time 10 20 ms
(1)
F
OSC
Oscillator Frequency (8XC196KD) 8.0 16.0 MHz
F
OSC
Oscillator Frequency (8XC196KD20) 8.0 20.0 MHz
NOTE:
1. The value of ADÐTIME is selected to meet these specifications.
10-BIT MODE A/D CHARACTERISTICS (Over Specified Operating Conditions)
Parameter Typical
(1)
Minimum Maximum Units* Notes
Resolution 1024 1024 Levels
10 10 Bits
Absolute Error 0
g
3 LSBs
Full Scale Error 0.25g0.5 LSBs
Zero Offset Error 0.25g0.5 LSBs
Non-Linearity 1.0g2.0 0
g
3 LSBs
Differential Non-Linearity Error
l
b
1
a
2 LSBs
Channel-to-Channel Matching
g
0.1 0
g
1 LSBs
Repeatability
g
0.25 LSBs
Temperature Coefficients:
Offset 0.009 LSB/§C Full Scale 0.009 LSB/
§
C
Differential Non-Linearity 0.009 LSB/
§
C
Off Isolation
b
60 dB 2, 3
Feedthrough
b
60 dB 2
VCCPower Supply Rejection
b
60 dB 2
Input Series Resistance 750 1.2K X 4
Voltage on Analog Input Pin ANGNDb0.5 V
REF
a
0.5 V 5, 6
DC Input Leakage 0
g
3.0 mA
Sampling Capacitor 3 pF
NOTES:
*An ‘‘LSB’’ as used here has a value of approxiimately 5 mV. (See Embedded Microcontrollers and Processors Handbook for A/D glossary of terms.)
1. These values are expected for most parts at 25
§
C but are not tested or guaranteed.
2. DC to 100 KHz.
3. Multiplexer Break-Before-Make is guaranteed.
4. Resistance from device pin, through internal MUX, to sample capacitor.
5. These values may be exceeded if the pin current is limited to
g
2 mA.
6. Applying voltages beyond these specifications will degrade the accuracy of other channels being converted.
7. All conversions performed with processor in IDLE mode.
20
Page 21
8XC196KD/8XC196KD20
8-BIT MODE A/D OPERATING CONDITIONS
Symbol Description Min Max Units
T
A
Ambient Temperature Commercial Temp. 0
a
70
§
C
V
CC
Digital Supply Voltage 4.50 5.50 V
V
REF
Analog Supply Voltage 4.00 5.50 V
ANGND Analog Ground Voltage V
SS
b
0.40 V
SS
a
0.40 V
T
SAM
Sample Time 1.0 ms
(1)
T
CONV
Conversion Time 7 20 ms
(1)
F
OSC
Oscillator Frequency (8XC196KD) 8.0 16.0 MHz
F
OSC
Oscillator Frequency (8XC196KD20) 8.0 20.0 MHz
NOTE:
1. The value of ADÐTIME is selected to meet these specifications.
8-BIT MODE A/D CHARACTERISTICS (Over Specified Operating Conditions)
Parameter Typical
(1)
Minimum Maximum Units* Notes
Resolution 256 256 Levels
8 8 Bits
Absolute Error 0
g
1 LSBs
Full Scale Error
g
0.5 LSBs
Zero Offset Error
g
0.5 LSBs
Non-Linearity 0
g
1 LSBs
Differential Non-Linearity Error
l
b
1
a
1 LSBs
Channel-to-Channel Matching
g
1 LSBs
Repeatability
g
0.25 LSBs
Temperature Coefficients:
Offset 0.003 LSB/§C Full Scale 0.003 LSB/
§
C
Differential Non-Linearity 0.003 LSB/
§
C
Off Isolation
b
60 dB 2, 3
Feedthrough
b
60 dB 2
VCCPower Supply Rejection
b
60 dB 2
Input Series Resistance 750 1.2K X 4
Voltage on Analog Input Pin V
SS
b
0.5 V
REF
a
0.5 V 5, 6
DC Input Leakage 0
g
3.0 mA
Sampling Capacitor 3 pF
NOTES:
*An ‘‘LSB’’ as used here has a value of approximately 20 mV. (See Embedded Microcontrollers and Processors Handbook for A/D glossary of terms).
1. These values are expected for most parts at 25
§
C but are not tested or guaranteed.
2. DC to 100 KHz.
3. Multiplexer Break-Before-Make is guaranteed.
4. Resistance from device pin, through internal MUX, to sample capacitor.
5. These values may be exceeded if pin current is limited to
g
2 mA.
6. Applying voltages beyond these specifications will degrade the accuracy of other channels being converted.
7. All conversions performed with processor in IDLE mode.
21
Page 22
8XC196KD/8XC196KD20
OTPROM SPECIFICATIONS
OPERATING CONDITIONS
Symbol Description Min Max Units
T
A
Ambient Temperature During Programming 20 30 C
V
CC
Supply Voltage During Programming 4.5 5.5 V
(1)
V
REF
Reference Supply Voltage During Programming 4.5 5.5 V
(1)
V
PP
Programming Voltage 12.25 12.75 V
(2)
V
EA
EA Pin Voltage 12.25 12.75 V
(2)
F
OSC
Oscillator Frequency during Auto and Slave 6.0 8.0 MHz Mode Programming
F
OSC
Oscillator Frequency during 6.0 16.0 MHz Run-Time Programming (8XC196KD)
F
OSC
Oscillator Frequency during 6.0 20.0 MHz Run-Time Programming (8XC196KD20)
NOTES:
1. V
CC
and V
REF
should nominally be at the same voltage during programming.
2. V
PP
and VEAmust never exceed the maximum specification, or the device may be damaged.
3. V
SS
and ANGND should nominally be at the same potential (0V).
4. Load capacitance during Auto and Slave Mode programming
e
150 pF.
AC OTPROM PROGRAMMING CHARACTERISTICS (SLAVE MODE)
Symbol Description Min Max Units
T
SHLL
Reset High to First PALE Low 1100 T
OSC
T
LLLH
PALE Pulse Width 50 T
OSC
T
AVLL
Address Setup Time 0 T
OSC
T
LLAX
Address Hold Time 100 T
OSC
T
PLDV
PROG Low to Word Dump Valid 50 T
OSC
T
PHDX
Word Dump Data Hold 50 T
OSC
T
DVPL
Data Setup Time 0 T
OSC
T
PLDX
Data Hold Time 400 T
OSC
T
PLPH
(1)
PROG Pulse Width 50 T
OSC
T
PHLL
PROG High to Next PALE Low 220 T
OSC
T
LHPL
PALE High to PROG Low 220 T
OSC
T
PHPL
PROG High to Next PROG Low 220 T
OSC
T
PHIL
PROG High to AINC Low 0 T
OSC
T
ILIH
AINC Pulse Width 240 T
OSC
T
ILVH
PVER Hold after AINC Low 50 T
OSC
T
ILPL
AINC Low to PROG Low 170 T
OSC
T
PHVL
PROG High to PVER Valid 220 T
OSC
NOTE:
1. This specification is for the Word Dump Mode. For programming pulses, use the Modified Quick Pulse Algorithm.
22
Page 23
8XC196KD/8XC196KD20
DC OTPROM PROGRAMMING CHARACTERISTICS
Symbol Description Min Max Units
I
PP
VPPSupply Current (When Programming) 100 mA
NOTE:
Do not apply V
PP
until VCCis stable and within specifications and the oscillator/clock has stabilized or the device may be
damaged.
OTPROM PROGRAMMING WAVEFORMS
SLAVE PROGRAMMING MODE DATA PROGRAM MODE WITH SINGLE PROGRAM PULSE
272145– 16
NOTE:
P3.0 must be high (‘‘1’’)
23
Page 24
8XC196KD/8XC196KD20
SLAVE PROGRAMMING MODE IN WORD DUMP WITH AUTO INCREMENT
272145– 17
NOTE:
P3.0 must be low (‘‘0’’)
SLAVE PROGRAMMING MODE TIMING IN DATA PROGRAM WITH REPEATED PROG PULSE AND AUTO INCREMENT
272145– 18
24
Page 25
8XC196KD/8XC196KD20
8XC196KC TO 8XC196KD DESIGN CONSIDERATIONS
1. Memory Map. The 8XC196KD has 1024 bytes of RAM/SFRs and 32K of OTPROM. The extra 512 bytes of RAM reside in locations 0200H to 03FFH, and the extra 16 Kbytes of OTPROM re­side in locations 6000H to 9FFFH. On the 87C196KC these locations are always external, so KC code may have to be modified to run on the KD.
2. The vertical window scheme has been extended to include all on-chip RAM.
3. IOC3.1 controls the CLKOUT signal. This bit must be 0 to enable CLKOUT.
4. The 87C196KD has a different autoprogramming algorithm to support 32K of on-chip OTPROM.
8XC196KD ERRATA
1. 83C196KD can possibly miss interrupts on P0.7. See techbit MC0893.
DATA SHEET REVISION HISTORY
This data sheet is valid for devices with a ‘‘D’’ and ‘‘E’’ at the end of the topside tracking number. Data sheets are changed as new device information be­comes available. Verify with your local Intel sales office that you have the latest version before finaliz­ing a design or ordering devices.
The following are important differences between the 272145-002 and 272145-003 data sheets:
1. I
IL1
specification (logic 0 input current in reset)
was misnamed. It is renamed I
IL2
.
2. T
LLYV
and T
LLGV
were removed. These specifi­cations are not necessary for high-speed system designs.
3. An errata with 83C196KD P0.7 EXTINT was add­ed to the errata section.
The following are important differences between the 272145-001 and 272145-002 data sheets:
1. Added 20 MHz specifications.
2. Added 80-lead SQFP package pinout.
3. Changed QFP Package i
JA
to 56§C/W from
42
§
C/W.
4. Changed V
HYS
to 300 mV from 150 mV.
5. Changed ICCTypical specification at 16 MHz to 65 mA from 50 mA.
6. Changed I
CC
Maximum specification at 16 MHz
to 75 mA from 70 mA.
7. Changed I
IDLE
Typical specification to 17 mA
from 15 mA.
8. Changed I
IDLE
Maximum specification to 25 mA
from 30 mA.
9. Changed I
PD
Typical specification to 8 mA from
15 mA.
10. Added I
PD
Maximum specification.
11. Changed T
CLDV
Maximum specification to
T
OSC
b
45 from T
OSC
b
50.
12. Changed T
LLAX
Minimum specification to
T
OSC
b
35 from T
OSC
b
40.
13. Changed T
CHWH
Minimum specification tob5
from
b
10.
14. Changed T
RHAX
Minimum specification to
T
OSC
b
25 from T
OSC
b
30.
15. Changed T
HALAZ
Maximum specification to
a
15 froma10.
16. Changed T
HALBZ
Maximum specification to
a
20 froma15.
17. Added T
HAHBV
Maximum specification.
18. Changed T
SAM
for 10-bit mode to 1 ms from
3 ms.
19. Changed T
SAM
for 8-bit mode to 1 ms from 2 ms.
20. Changed I
IH1
test condition to V
IN
e
2.4V from
5.5V.
21. Changed I
IH1
maximum specification toa200
mA from
a
100 mA.
22. Removed NMI from list of standard inputs.
23. Updated ICCand I
IDLE
vs frequency graph.
24. Updated note under DC EPROM Programming Characteristics.
25. Changed I
LI1
maximum specification tob12
mA from
b
6 mA.
25
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