Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB861
DESCRIPTION ·
·With TO-220C package
·Complement to type 2SD1138
APPLICATIONS
·Low frequency power amplifier color
TV vertical deflection output
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -2 A
ICP Collector current-Peak
PC Collector power dissipation
Collector-base voltage Open emitter -200 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -6 V
℃)
Ta=25℃
T
=25℃
C
-5 A
1.8
W
30
Tj Junction temperature 150
T
Storage temperature -45~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB861
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
VBE Base-emitter voltage IC=-50mA ; VCE=-4V -1.0 V
I
CBO
h
FE-1
h
FE-2
COB Output capacitance IE=0 ;VCB=-100V,f=1MHz 30 pF
Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -150 V
Emitter-base breakdown votage IE=-5mA; IC=0 -6 V
Collector-emitter saturation voltage IC=-0.5 A;IB=-50m A -3.0 V
Collector cut-off current VCB=-120V; IE=0 -1 μA
DC current gain IC=-50mA ; VCE=-4V 60 200
DC current gain IC=-0.5A ; VCE=-10V 60
h
classifications
FE-1
B C
60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB861
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB861
4
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