Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB826
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Complement to type 2SD1062
·Wide area of safe operation
APPLICATIONS
·Relay drivers,
·High-speed inverters, converters
·General high-current switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -12 A
ICP Collector current (Pulse) -15 A
PC Collector power dissipation TC=25℃ 40 W
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -6 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB826
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-1A ; VCE=-5V 10 MHz
Switching times
ton Turn-on time 0.2 μs
ts Storage time 0.1 μs
Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -50 V
Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V
Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V
Collector-emitter saturation voltage IC=-6A;IB=-0.3A -0.5 V
Collector cut-off current VCB=-40V;IE=0 -0.1 mA
Emitter cut-off current VEB=-4V; IC=0 -0.1 mA
DC current gain IC=-1A ; VCE=-2V 70 280
DC current gain IC=-5A ; VCE=-2V 30
I
=5.0A ;IB1=- IB2=0.5A
C
tf Fall time
h
70-140 100-200 140-280
classifications
FE-1
Q R S
0.4 μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB826
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB826
4
Loading...