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2002. 12. 11 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB817
TRIPLE DIFFUSED PNP TRANSISTOR
Revision No : 2
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTD1047.
Recommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification O:60 120, Y:100 200
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-160 V
Collector-Emitter Voltage
V
CEO
-140 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
DC
I
C
-12
A
Pulse
I
CP
-15
Collector Power Dissipation (Tc=25 )
P
C
100 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-80V, IE=0
- - -0.1 mA
Emitter Cut-off Current
I
EBO
VEB=-4V, IC=0
- - -0.1 mA
DC Current Gain
h
FE
(1) (Note) VCE=-5V, IC=-1A
60 - 200
h
FE
2 VCE=-5V, IC=-6A
20 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-5A, IB=-0.5A
- - -2.5 V
Base-Emitter Voltage
V
BE
VCE=-5V, IC=-1A
- - -1.5 V
Transition Frequency
f
T
VCE=-5V, IC=-1A
- 15 - MHz
Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 300 - pF
Turn On Time
t
on
VCC=-20V
IC=1A=10 IB1=-10 I
B2
RL=20
- 0.25 -
S
Fall Time
t
f
- 0.53 -
Storage Time
t
stg
- 1.61 -
A
E
D
d
P
123
Q
F
J
PT
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
B
K
I
C
H
G
L
M
MILLIMETERSDIM
A 15.9 MAX
B 4.8 MAX
C 20.0 0.3
D 2.0 0.3
d 1.0+0.3/-0.25
E2.0
F 1.0
G 3.3 MAX
H9.0
I4.5
J
K 1.8 MAX
L 20.5 0.5
P 5.45 0.2
Q
T 0.6+0.3/-0.1
_
+
_
+
2.0
_
+
2.8M
_
+
_
Φ3.2 0.2
+
TO-3P(N)
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2002. 12. 11 2/3
KTB817
Revision No : 2
I - V
CCE
-10
-240mA
-8
C
-6
-200mA
-160mA
-120mA
-4
-2
COLLECTOR CURRENT I (A)
0
-10 -20 -30 -40 -50
0
COLLECTOR EMITTER VOLTAGE V (V)
V - I
CE(sat)
-10
-5
-3
-1
-0.5
-0.3
CE(sat)
V (V)
-0.1
-0.05
-0.03
COLLECTOR-EMITTER VOLTAGE
-0.01
-0.1
-0.3 -1
COLLECTOR CURRENT I (A)
-80mA
C
C
-40mA
-20mA
I =0
B
CE
I /I =10
B
C
-3 -5 -10
1k
500
300
FE
100
50
30
10
5
DC CURRENT GAIN h
3
1
COLLECTOR CURRENT I (A)
V - I
BE(sat)
-10
-5
-3
BE(sat)
-1
-0.5
-0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
-0.1
-0.1 -0.3 -3-1
COLLECTOR CURRENT I (A)
h - I
-3-1-0.3-0.1
CFE
V =-5V
CE
-10 -30 -100
C
C
I /I =10
C
B
C
-10
f - I
I - V
C
BE
-8
-7
C
-6
V =-5V
CE
100
50
T
30
CT
V =-5V
CE
-5
-4
-3
-2
-1
COLLECTOR CURRENT I (A)
0
0
-0.4 -0.8 -1.2 -1.6
BASE-EMITTER VOLTAGE V (V)
BE
10
5
3
1
TRANSITION FREQUENCY f (MHz)
-1 -3-0.3-0.1
COLLECTOR CURRENT I (A)
-10
C
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2002. 12. 11 3/3
KTB817
Revision No : 2
k
C - V
ob CB
1k
500
300
100
ob
C (pF)
50
30
COLLECTOR OUTPUT CAPACITANCE
10
-1
-3 -30 -100
COLLECTOR-BASE VOLTAGE V (V)
-10
f=1MHz
CB
SAFE OPERATING AREA
-100
-50
-30
C
-10
-5
-3
-1
-0.5
-0.3
COLLECTOR CURRENT I (A)
-0.1
COLLECTOR-EMITTER VOLTAGE V (V)
DC
10mS
100mS
-30-10-3-1
1mS
-100 -300 -1
CE
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