Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB595
DESCRIPTION ·
·With TO-220C package
·Complement to type 2SD525
·High breakdown voltage :V
·Low collector saturation volage
: V
=-2.0V(Max)
CE(sat)
APPLICATIONS
·Power amplifier applications
·Recommend for 30W high fidelity
audio frequency amplifier output stage
PINNING
CEO
=-100V
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -5 A
IE Emitter current
IB Base current -4 A
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -5 V
℃)
-5 A
T
PC Collectorl power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
40 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB595
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
VBE Base-emitter on voltage IC=-4A ; VCE=-5V -1.5 V
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-1A ; VCE=-5V 5 MHz
COB Output capacitance IE=0; VCB=-10V;f=1MHz 270 pF
Collector-emitter breakdown voltage IC=-50mA; IB=0 -100 V
Emitter-base breakdown votage IE=-10mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-4A;IB=-0.4 A -2.0 V
Collector cut-off current VCB=-100V; IE=0 -100
Emitter cut-off current VEB=-5V; IC=0 -1 mA
DC current gain IC=-1A ; VCE=-5V 40 240
DC current gain IC=-4A ; VCE=-5V 20
μA
h
classifications
FE-1
R O Y
40-80 70-140 120-240
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB595
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB595
4
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