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(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Micro-Electro-Magnetical Tech Co.
SCHOTTKY DIE SPECIFICATION TYPE: SB140S
General Description:
40 V 1 A Standard VF Single Anode
ELECTRICAL CHARACTERISTICS
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 42.5 Volt
SYM Die Sort UNIT
Spec. Limit
40
Ir=0.5mA (for dice form)
Average Rectified Forward Current
IFAV Amp
1
Maximum Instantaneous Forward Voltage
VF MAX 0.49 Volt
0.55 @ 1 Ampere, Ta=25°C
Maximum Instantaneous Reverse Voltage
@ VR= 40 Volt, Ta=25°C
Maximum Junction Capacitance @ 0V, 1MHZ
IR MAX 0.09 mA
Cj MAX pF
0.5
110
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperature
IFSM Amp
Tj °C
TSTG °C
40
-65 to +150
-65 to +150
Specifications apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM um
A 914 35.98
B 814 32.00
A
C
C 834 32.80
D 254 10.00
Die Size
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Thickness (Max)
B
Top-side Metal
SiO2 Passivation
D
P+ Guard Ring
Back-side Metal
PS:
(1)Cutting street width is around 80um(3.14mil).
ITEM
305 12.00
Mil
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