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INCHANGE Semiconductor
oltage
oltage
isc
Silicon PNP Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Good Linearity of h
·Complement to Type 2SD1763A
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
= -160V(Min.)
FE
℃℃℃℃)
isc
Product Specification
2SB1186A
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -1.5 A
ICM Collector Current-Peak -3 A
PC
TJ Junction Temperature 150 ℃
Collector-Base V
Collector-Emitter V
Emitter-Base Voltage -5 V
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
-160 V
-160 V
2
W
20
T
stg
Storage Temperature Range -55~150 ℃
isc Website：：：：www.iscsemi.cn
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INCHANGE Semiconductor
oltage
isc
Silicon PNP Power Transistor
isc
Product Specification
2SB1186A
ELECTRICAL CHARACTERISTICS
TC=25℃℃℃℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
hFE DC Current Gain IC= -0.1A; VCE= -5V 60 200
COB Output Capacitance
fT Current-Gain—Bandwidth Product
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown V
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -2.0 V
Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A -1.5 V
Collector Cutoff Current VCB= -120V; IE= 0 -1
Emitter Cutoff Current VEB= -4V; IC= 0 -1
IC= -1mA; IB= 0
IC= -50μA; IE= 0
IE= -50μA; IC= 0
IE= 0; VCB= -10V; f
IE= 0.1A; VCE= -5V; f
test
=1MHz
= 30MHz
test
-160 V
-160 V
-5 V
30 pF
50 MHz
μA
μA
hFE Classifications
D E
60-120 100-200
isc Website：：：：www.iscsemi.cn
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