Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA985 2SA985A
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2275/2275A
·High breakdown voltage
APPLICATIONS
·For low frequency and high frequency
power amplifer applicatons
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA985 -120
V
CBO
V
CEO
V
EBO
IC Collector current -1.5 A
ICM Collector current-peak -3.0 A
IB Base current -0.3 A
Collector-base voltage
2SA985A
2SA985 -120
Collector-emitter voltage
2SA985A
Emitter-base voltage Open collector -5 V
Open emitter
Open base
V
-150
V
-150
Ta=25℃ 1.5
PT Total power dissipation
TC=25℃ 25
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA985 2SA985A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA985 -120
V
(BR)CEO
V
CEsat
V
BEsat
Collector-emitter
breakdown voltage
2SA985A
Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.3 -2.0 V
Base-emitter saturation voltage IC=-1A; IB=-0.1A -0.9 -1.5 V
IC=-25mA ,IB=0
V
-150
I
Collector cut-off current VCB=-120V; IE=0 -1.0
CBO
I
Emitter cut-off current VEB=-3V; IC=0 -1.0
EBO
h
DC current gain IC=-5mA ; VCE=-5V 35
FE-1
h
DC current gain IC=-0.3A ; VCE=-5V 60 150 320
FE-2
COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 29 pF
fT Transition frequency IC=-0.2A ; VCE=-5V 180 MHz
μA
μA
h
Classifications
FE-2
R Q P
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA985 2SA985A
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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