Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2238
·High breakdown votage
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -1.5 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -5 V
℃)
2SA968 -160
2SA968A -180
2SA968B
2SA968 -160
2SA968A -180
2SA968B
Open emitter
-200
Open base
-200
V
V
IE Emitter current 1.5 A
T
PT Total power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
25 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA968 -160
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
hFE DC current gain IC=-100mA ; VCE=-5V 70 240
Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 30 pF
fT Transition frequency IC=-100mA ; VCE=10V 100 MHz
Collector-emitter
breakdown voltage
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.5 V
Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V
Collector cut-off current VCB=-160V ;IE=0 -1.0
Emitter cut-off current VEB=-5V; IC=0 -1.0
2SA968A -180
2SA968B
=-10mA; IB=0
I
C
V
-200
μA
μA
hFE Classifications
O Y
70-140 120-240
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B
PACKAGE OUTLINE
3
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
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