Product specification
Replaces datasheet NE/SA5217 of 1995 Apr 26
IC19 Data Handbook
1998 Oct 07
Page 2
Philips SemiconductorsProduct specification
SA5217Postamplifier with link status indicator
DESCRIPTION
The SA5217 is a 75MHz postamplifier system designed to accept
low level high-speed signals. These signals are converted into a
TTL level at the output. The SA5217 can be DC coupled with the
previous transimpedance stage using SA5210, SA5211 or SA5212A
transimpedance amplifiers. The main difference between the
SA5217 and the SA5214 is that the SA5217 does not make the
output of A1 and input of A2 accessible; instead, it brings out the
output of A2 and the input of A8 thus activating the on-chip Schmitt
trigger function by connecting two external capacitors. The result is
that a much longer string of 1s and 0s, in the bit stream, can be
tolerated. This ”system on a chip” features an auto-zeroed first
stage with noise shaping, a symmetrical limiting second stage, and a
matched rise/fall time TTL output buffer. The system is
user-configurable to provide adjustable input threshold and
hysteresis. The threshold capability allows the user to maximize
signal-to-noise ratio, thereby insuring a low Bit Error Rate (BER).
An auto-zero loop can be used to replace two input coupling
capacitors with a single Auto Zero (AZ) capacitor. A signal absent
flag indicates when signals are below threshold. The low signal
condition forces the TTL output to the last logic state. User
interaction with this ”jamming” system is available. The SA5217 is
packaged in a standard 20-pin surface-mount package and typically
consumes 40mA from a standard 5V supply. The SA5217 is
designed as a companion to the SA5211/5212A and SA5210
transimpedance amplifiers. These differential preamplifiers may be
directly coupled to the postamplifier inputs. The SA5210/5217,
SA5211/5217 or SA5212A/5217 combinations convert nanoamps of
photodetector current into standard digital TTL levels.
APPLICATIONS
•Fiber optics
•Communication links in Industrial and/or Telecom environment
with high EMI/RFI
•Local Area Networks (LAN)
•Synchronous Optical Networks (SONET) STS-1
•RF limiter
•Good for 2
23
-1 pseudo random bit stream
PIN CONFIGURATION
D1 Package
LED
1
GND
FLAG
JAM
V
CCD
V
CCA
GND
V
OUT
2
3
4
A
5
6
7
8
9
D
10
C
PKDET
THRESH
NOTE:
1. SOL - Released in large SO package only.
20
19
18
17
16
15
14
13
12
11
IN
1B
IN
1A
C
AZP
C
AZN
OUT
2B
IN
8B
OUT
2A
IN
8A
R
HYST
R
PKDET
SD00354
Figure 1. Pin Configuration
FEATURES
•Postamp for the SA5211/5212A. SA5210 preamplifier family
•Wideband operation: typical 75MHz (150MBaud NRZ)
•Interstage filtering/equalization possible
•Single 5V supply
•Low signal flag
•Output disable
•Link status threshold and hysteresis programmable
•LED driver (normally ON with above threshold signal)
•Fully differential for excellent PSRR
•Auto-zero loop for DC offset cancellation
•2kV ElectroStatic Discharge (ESD) protection
ORDERING INFORMATION
DESCRIPTIONTEMPERATURE RANGEORDER CODEDWG #
20-Pin Plastic Small Outline Large (SOL) Package-40 to +85°CSA5217DSOT163-1
ABSOLUTE MAXIMUM RATINGS
SYMBOLPARAMETERSA5214UNIT
V
CCA
V
CCD
T
A
T
J
T
STG
P
D
V
IJ
1998 Oct 07853-1658 20141
Power supply+6V
Power supply+6V
Operating ambient temperature range-40 to +85°C
Operating junction temperature range-55 to +150°C
Storage temperature range-65 to +150°C
Power dissipation1.4W
Jam input voltage-0.5 to 5.5V
2
Page 3
Philips SemiconductorsProduct specification
SA5217Postamplifier with link status indicator
PIN DESCRIPTIONS
PIN
SYMBOLDESCRIPTION
NO.
1LEDOutput for the LED driver. Open collector output transistor with 125Ω series limiting resistor. An above threshold signal
turns this transistor ON.
2C
PKDET
3THRESH Peak detector threshold resistor. The value of this resistor determines the threshold level of the peak detector.
4GND
5FLAGPeak detector digital output. When this output is LOW, there is data present above the threshold. This pin is normally
6JAMInput to inhibit data flow. Sending the pin HIGH forces TTL DATA OUT ON, Pin 10, LOW. This pin is normally connected
7V
CCD
8V
CCA
9GND
10V
OUT
11R
PKDET
12R
HYST
13IN
8A
14OUT
15IN
8B
16OUT
17C
AZN
18C
AZP
19IN
1A
20IN
1B
Capacitor for the peak detector. The value of this capacitor determines the detector response time to the signal, supplementing the internal 10pF capacitor.
Device analog ground pin.
A
connected to the JAM pin and has a TTL fanout of two.
to the FLAG pin and is TTL-compatible.
Power supply pin for the digital portion of the chip.
Power supply pin for the analog portion of the chip.
Device digital ground pin.
D
TTL output pin with a fanout of five.
Peak detector current resistor. The value of this resistor determines the amount of discharge current available to the
peak detector capacitor, C
PKDET
.
Peak detector hysteresis resistor. The value of this resistor determines the amount of hysteresis in the peak detector.
Non-inverting input to amplifier A8.
Non-inverting output of amplifier A2.
2A
Inverting input to amplifier A8.
Inverting output of amplifier A2.
2B
Auto-Zero capacitor pin (Negative terminal). The value of this capacitor determines the low-end frequency response of
the preamp A1.
Auto-Zero capacitor pin (Positive terminal). The value of this capacitor determines the low-end frequency response of the
preamp A1.
Non-inverting input of the preamp A1.
Inverting input of the preamp A1.
BLOCK DIAGRAM
R
PKDET
1998 Oct 07
C
C
IN
IN
AZP
AZN
1B
1A
V
CCA
87
20
A1A2
19
18
17
11
9
43
GNDAGND
THRESH
D
V
OUT2AOUT
CCD
GATED AMP
PEAK DETECT
A3
2
C
PKDET
Figure 2. Block Diagram
3
2B
161514
A6
A4
A7
HYSTERESIS
IN8BIN
8A
13
SCHMITT TRIGGER
A8
OUTPUT DISABLE
A5
LED DRIVER
12
R
HYST
10
6
5
1
SD00355
V
OUT
JAM
FLAG
LED
Page 4
Philips SemiconductorsProduct specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
SA5217Postamplifier with link status indicator
RECOMMENDED OPERATING CONDITIONS
SYMBOLPARAMETERRATINGUNIT
V
CCA
V
CCD
T
A
T
J
P
D
DC ELECTRICAL CHARACTERISTICS
Min and Max limits apply over the operating temperature range at V
= V
CCA
CCD
V
I1
V
O2
I8L
I8H
OH
OL
I
OH
I
OL
I
OS
IHJ
ILJ
I
IHJ
I
ILJ
OHF
OLF
OHF
OLF
SCF
= +5.0V and T
CCD
V
CCA
V
THRESH
V
RPKDET
V
I
I
V
V
V
V
RHYST
V
V
V
V
I
I
I
I
LEDH
Power supply4.5 to 5.5V
Power supply4.5 to 5.5V
Ambient temperature range-40 to +85°C
Operating junction temperature range-40 to +110°C
Power dissipation300mW
= V
= +5.0V unless otherwise specified. Typical data applies at
CCD
= 25°C.
A
CCA
LIMITS
MinTypMax
Analog supply current3041.2mA
Digital supply current (TTL, Flag, LED)1013.5mA
A1 input bias voltage (A,B inputs)3.083.43.70V
A1 output bias voltage (A,B outputs)3.103.84.50V
A8 input bias voltage Low (A,B inputs)3.403.553.68V
A8 input bias voltage High (A,B inputs)3.683.914.12V
High-level TTL output voltageIOH=-200µA2.43.4V
Low-level TTL output voltageIOL=8mA0.30.4V
High-level TTL output currentV
Low-level TTL output currentV
Short-circuit TTL output currentV
=2.4V-40-24.4mA
OUT
=0.4V7.030mA
OUT
=0.0V-95mA
OUT
Threshold bias voltagePin 3 Open0.75V
RPKDETPin 11 Open0.72V
RHYST bias voltagePin 12 Open0.72V
High-level jam input voltage2.0V
Low-level jam input voltage0.8V
High-level jam input currentVIJ=2.7V30µA
Low-level jam input currentVIJ=0.4V-485-240µA
High-level flag output voltageIOH=-80µA2.43.8V
Low-level flag output voltageIOL=3.2mA0.330.4V
High-level flag output currentV
Low-level flag output currentV
Short-circuit flag output currentV
LED ON maximum sink currentV
=2.4V-18-5mA
OUT
=0.4V3.2510mA
OUT
=0.0V-61-40-26mA
OUT
=3.0V82280mA
LED
1998 Oct 07
4
Page 5
Philips SemiconductorsProduct specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
PP
PRBS
2
23
1
mV
V
A
mV
THR
PP
SA5217Postamplifier with link status indicator
AC ELECTRICAL CHARACTERISTICS
Min and Max limits apply over the operating temperature range at V
= V
CCD
= +5.0V and T
Maximum operating frequencyTest circuit6075MHz
Maximum Functional A1 input signal (single en-
ded)
V
CCA
f
OP
V
INH
= 25°C.
A
Minimum Functional A1 input signal (single-ended)
Minimum Functional A1 input signal (differential)3
V
INL
Minimum input sensitivity for output BER ≤ 10
–9
(single-ended)
Minimum input sensitivity for output BER ≤ 10
–9
(differential)
R
C
R
C
R
C
IN1
IN1
IN8
IN2
OUT2
OUT2
Input resistance (differential at IN1)PRBS = 223–11200Ω
Input capacitance (differential at IN1)2pF
Input resistance (differential at IN2)2000Ω
Input capacitance (differential at IN2)2pF
Output resistance (differential at OUT2)25Ω
Output capacitance (differential at OUT2)2pF
Hysteresis voltage range (single-ended)
HYS
V
THR
Hysteresis voltage range (differential)
Threshold voltage (single-ended)
Threshold voltage (differential)R
t
TLH
t
THL
t
RFD
t
PWD
TTL Output Rise Time 20% to 80%Test Circuit1.3ns
TTL Output Fall Time 80% to 20%Test Circuit1.2ns
t
mismatch0.1ns
TLH/tTHL
Pulse width distortion of output
CCA
Distortion =
= V
= +5.0V unless otherwise specified. Typical data applies at
CCD
LIMITS
MinTypMax
Test Circuit1.6V
Test CIrcuit
6
9
=
–
4.5
Test circuit, TA = 25°C
R
=5k R
RHYST
THRESH
(FLAG Low) Test circuit,
@ 50MHz
=4k R
RHYST
50mV
THRESH
, 1010. . .input
P-P
T
T
H
TH T
L
L
=33k
=33k9.5
2
10
10
5
19
TBD%
mV
mV
P-P
P-P
P-P
P-P
P-P
1998 Oct 07
100µH
100µH
V
+5V
CC
0.1µF
10µF
125
33k
1
LED
10
2
3
4
5
6
7
8
9
15pF
C
PKDET
THRESH
GND
A
FLAG
JAM
V
CCD
V
CCA
GND
D
V
OUT
V
0.1µF
OUT
Figure 3. AC Test Circuit
NE5217
OUT
OUT
R
R
PKDET
400
5
IN
1B
IN
1A
C
AZP
C
AZN
2B
IN
8B
2A
IN
8A
HYST
0.1µF
0.1µF
4k
0.1µF
25
50
V
IN
SD00356
20
19
18
17
0.1µF
16
15
0.1µF
14
13
12
11
10k
Page 6
Philips SemiconductorsProduct specification
SA5217Postamplifier with link status indicator
TYPICAL PERFORMANCE CHARACTERISTICS
Analog Supply Current vs TemperatureDigital Supply Current vs Temperature
The SA5217 postamplifier is a highly integrated chip that provides
up to 60dB of gain at 60MHz, to bring mV level signals up to TTL
levels.
The SA5217 contains eight amplifier blocks (see Block Diagram).
The main signal path is made up of a cascade of limiting stages: A1,
A2 and A8. The A3-A4-A7 path performs a wideband full-wave
rectification of the input signal with adjustable hysteresis and decay
times. It outputs a TTL High on the “FLAG” output (Pin 5) when the
input is below a user adjustable threshold. An on-chip LED driver
turns the external LED to the On state when the input signal is
above the threshold. In a typical application the “FLAG” output is
tied back tot he “JAM” input; forcing the “JAM” input to TTL High will
latch the TTL Data Out at the last logical state.
Threshold voltage and hysteresis voltage range are adjustable with
resistors R
sheet will result in performance shown in the graph “Hysteresis and
Forward Active Region”. A minority of parts may be sensitive
enough that FLAG High (Off) occurs below the minimum functional
1998 Oct 07
THRESH
and R
. The typical values given in the data
HYST
input signal level, V
the graph. Such parts may require adjustment of R
. This condition is shown by the dotted line in
IN1
THRESH
important to guarantee that an output signal is present for the full
hysteresis range. If this is not important, R
THRESH
may be adjusted
to give a FLAG Low for lower level input signals.
An auto-zero loop allows the SA5217 to be directly connected to a
transimpedance amplifier such as the SA5210, SA5211, or
SA5212A without coupling capacitors. This auto-zero loop cancels
the transimpedance amplifier’s DC offset, the SA5217 A1 offset, and
the data-dependent offset in the PIN diode/transimpedance amplifier
combination.
A typical application of the SA5217 postamplifier is depicted in
Figure 6. The system uses the SA5211 transimpedance amplifier
which has a 28k differential transimpedance gain and a -3dB
bandwidth of 140MHz. this typical application is optimized for a
50Mb/s Non Return to Zero (NRZ) bit stream.
As the system’s gain bandwidth product is very high, it is crucial to
employ good RF design and printed circuit board layout techniques
to prevent the system from becoming unstable.
7
if it is
Page 8
Philips SemiconductorsProduct specification
SA5217Postamplifier with link status indicator
+V
CC
47µF
C1
GND
10µH
L3
10µH
L2
C13
10µF
C15
10µF
R2
220
C11
R3
33k
C12
.01µF
.01µF
D1
LED
100pF
C14
V
OUT
LED
1
C
2
PKDET
THRESH
3
GND
A
4
FLAG
5
JAM
6
V
CCD
7
V
CCA
8
GND
D
9
TTL
1011
OUT
(TTL)
OUT
NE5217
OUT
R
R
PKDET
C2
IN
1B
IN
1A
C
AZP
C
AZN
2B
IN
8B
2A
IN
8A
HYST
.01µF
L1
10µH
C5
10µF
R1
100
C3
1.0µF
.01µF
BPF31
OPTICAL
INPUT
C6
C7
20
19
18
17
16
15
14
13
12
R5
10k
100pF
C8
0.1µF
C9
0.1µF
C10
0.1µF
GND
GND
9
GND
10
GND
11
12
OUT
1
13
GND
OUT
14
2
R4
4k
V
V
NE5210
CC1
CC2
NC
I
NC
GND
GND
78
C4
6
.01µF
5
IN
4
3
2
1
NOTE:
THE NE5210/NE5217 combination can operate at data rates in excess of 100Mb/s NRZ
Figure 6. A 50Mb/s Fiber Optic Receiver
For more information on this application, please refer to Application
Brief AB1432.
Die Sales Disclaimer
Due to the limitations in testing high frequency and other parameters
at the die level, and the fact that die electrical characteristics may
shift after packaging, die electrical parameters are not specified and
die are not guaranteed to meet electrical characteristics (including
temperature range) as noted in this data sheet which is intended
only to specify electrical characteristics for a packaged device.
All die are 100% functional with various parametrics tested at the
wafer level, at room temperature only (25°C), and are guaranteed to
be 100% functional as a result of electrical testing to the point of
wafer sawing only. Although the most modern processes are
1998 Oct 07
SD00359
utilized for wafer sawing and die pick and place into waffle pack
carriers, it is impossible to guarantee 100% functionality through this
process. There is no post waffle pack testing performed on
individual die.
Since Philips Semiconductors has no control of third party
procedures in the handling or packaging of die, Philips
Semiconductors assumes no liability for device functionality or
performance of the die or systems on any die sales.
Although Philips Semiconductors typically realizes a yield of 85%
after assembling die into their respective packages, with care
customers should achieve a similar yield. However, for the reasons
stated above, Philips Semiconductors cannot guarantee this or any
other yield on any die sales.
8
Page 9
Philips SemiconductorsProduct specification
SA5217Postamplifier with link status indicator
THRESH
GNDA
FLAG
JAM
C
PKDET
3
4
5
6
LED
2
1
IN
1B
20
IN
1A
19
18
C
AZP
17
C
AZN
16
OUT
2B
IN
15
8B
V
CCD
V
CCA
ECN No.: 05379
1992 Jan 27
OUT
R
HYST
14
7
8
910
GNDD
V
OUT
1112
R
PKDET
13
2A
IN
8A
SD00491
Figure 7. SA5217 Bonding Diagram
1998 Oct 07
9
Page 10
Philips SemiconductorsProduct specification
SA5217Postamplifier with link status indicator
SO20: plastic small outline package; 20 leads; body width 7.5 mmSOT163-1
1998 Oct 07
10
Page 11
Philips SemiconductorsProduct specification
SA5217Postamplifier with link status indicator
NOTES
1998 Oct 07
11
Page 12
Philips SemiconductorsProduct specification
SA5217Postamplifier with link status indicator
Data sheet status
Data sheet
status
Objective
specification
Preliminary
specification
Product
specification
Product
status
Development
Qualification
Production
Definition
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1]
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
Date of release: 10-98
Document order number:9397 750 04627
1998 Oct 07
12
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