Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA473
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1173
·Collector current :I
·Collector dissipation:P
APPLICATIONS
·Low frequency power amplifier
·Power regulator
PINNING
PIN DESCRIPTION
=-3A
C
=10W@TC=25℃
C
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -3 A
PC Collector power dissipation TC=25℃ 10 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter -30 V
Collector-emitter voltage Open base -30 V
Emitter-base voltage Open collector -5 V
℃)
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA473
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
VBE Base-emitter voltage IC=-0.5A ; VCE=-2V -1.0 V
I
CBO
I
EBO
h
FE-1
h
FE-2
COB Output capacitance IE=0; VCB=-10V;f=1MHz 40 pF
fT Transition frequency IC=-0.5A ; VCE=-2V 100 MHz
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -30 V
Collector-base breakdown voltage IC=-0.5mA ;IE=0 -30 V
Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V
Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.8 V
Collector cut-off current VCB=-20V;IE=0 -1.0 μA
Emitter cut-off current VEB=-5V; IC=0 -1.0 μA
DC current gain IC=-0.5A ; VCE=-2V 70 240
DC current gain IC=-2.5A ; VCE=-2V 25
h
70-140 120-240
classifications
FE-1
O Y
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA473
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA473
4
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