Page 1
INTEGRATED CIRCUITS
SA3601
Low voltage dual-band RF front-end
Preliminary specification 1999 Nov 09
Page 2
Philips Semiconductors Preliminary specification
TYPE NUMBER
SA3601Low voltage dual-band RF front-end
DESCRIPTION
The SA3601 is an integrated dual-band RF front-end that operates at
both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and
is designed in a 20 GHz f
BiCMOS process—QUBiC2. The
T
low-band (LB) receiver is a combined low-noise amplifier (LNA) and
mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB
of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a
9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm.
The high-band (HB) receiver is a combined low-noise amplifier (LNA)
and mixer, with the low-band and high-band mixers sharing the same
mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of
gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a
8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.
FEATURES
•Low current consumption: LB I
= 14 mA; HB ICC = 15.5 mA
CC
•Outstanding low- and high-band noise figure
•LNAs with gain control (30 dB gain step)
•LO input and output buffers
•Frequency doubler
•On chip logic for network selection and power down
•Very small outline package
APPLICATIONS
•800 to 1000 MHz analog and digital receivers
•1800 to 2000 MHz digital receivers
•Portable radios
•Mobile communications equipment
PIN CONFIGURATION
HBLNA_IN
GND
V
HBMXR+_IN
HBMXR–_IN
PD1
V
GND
GND
1
2
3
CC
4
5
6
7
CC
8
9
10 11 12 13 14 15 16
GND
HBLNA_OUT
TOP VIEW
GND
GND
LBLNA_OUT
26272829303132
GND
LBLNA_IN
25
24
23
22
21
20
19
18
17
GND
V
CC
LBMXR_IN
GND
MXR+_OUT
MXR–_OUT
GND
LBVCO_IN
PD2
GND
GND
LBVCO_OUT
GND
PD3
HBVCO_IN
GND
ORDERING INFORMATION
PACKAGE
NAME DESCRIPTION VERSION
SA3601 BCC32++ HBCC32: plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm SOT560-1
SR02237
1999 Nov 09
2
Page 3
Philips Semiconductors Preliminary specification
SA3601Low voltage dual-band RF front-end
PIN DESCRIPTIONS
PIN
NO.
PIN NAME DESCRIPTION
1 HBLNA_IN Highband LNA input
2 GND Ground
3 V
CC
Power supply
4 HBMXR+_IN Highband mixer positive input
5 HBMXR–_IN Highband mixer negative input
6 PD1 Power down control 1
7 V
CC
Power supply
8 GND Ground
9 PD2 Power down control 2
10 GND Ground
11 GND Ground
12 LBVCO_OUT Lowband VCO buffered output
13
14
15
16
GND
HBVCO_IN
PD3
GND
Ground
Highband VCO input
Power down control 3
Ground
PIN
NO.
PIN NAME DESCRIPTION
17 LBVCO_IN Lowband VCO input
18 GND Ground
19 MXR–_OUT Mixer negative output
20 MXR+_OUT Mixer positive output
21 GND Ground
22 LBMXR_IN Lowband mixer input
23 V
CC
Power supply
24 GND Ground
25 LBLNA_IN Lowband LNA input
26 GND Ground
27 GND Ground
28 LBLNA_OUT Lowband LNA output
29
30
31
32
GND
HBLNA_OUT
GND
GND
Ground
Highband LNA output
Ground
Ground
BLOCK DIAGRAM
HBLNA_IN
GND
V
HBMXR+_IN
HBMXR–_IN
PD1
V
GND
GND
GND
1
2
CC
3
4
5
6
7
CC
8
9
10 11 12 13 14 15 16
PD2
GND
GND
HBLNA_OUT
TOP VIEW
x2
LBVCO_OUT
GND
GND
GND
LBLNA_OUT
PD3
HBVCO_IN
26272829303132
GND
GND
25
24
23
22
21
20
19
18
17
LBLNA_IN
GND
V
LBMXR_IN
GND
MXR+_OUT
MXR–_OUT
GND
LBVCO_IN
CC
SR02238
1999 Nov 09
Figure 1. Block Diagram
3
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Philips Semiconductors Preliminary specification
SA3601Low voltage dual-band RF front-end
MODE SELECT LOGIC
PD1 PD2 PD3 OPERATING MODE
0 0 0 Sleep mode off off off off off off off
0 0 1 Tx mode, LO lowband buffer off off off off off on off
0 1 0 Rx mode cellular, low gain off on off off off on off
0 1 1 Rx mode cellular, high gain on on off off off on off
1 0 0 Rx mode PCS, low gain, x2 off off off on on on off
1 0 1 Rx mode PCS, high gain, x2 off off on on on on off
1 1 0 Rx mode PCS, low gain, no x2 off off off on off off off
1 1 1 Rx mode PCS, high gain, no x2 off off on on off off off
Cel
LNA
Cel
MXR
PCS
LNA
PCS
MXRx2DBL
LB LO
O/P
HB LO
O/P
1999 Nov 09
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Philips Semiconductors Preliminary specification
SA3601Low voltage dual-band RF front-end
OPERA TION
The SA3601 is a highly integrated dual-band radio frequency (RF)
front-end integrated circuit (IC) targeted for TDMA applications. This
IC is split into separate low-band (LB) and high-band (HB) receivers.
The LB receiver contains a low noise amplifier (LNA) and mixer that
are designed to operate in the cellular frequency range
(869–894MHz). The HB receiver contains an LNA and mixer that
are designed to operate in the PCS frequency range
(1930–1990 MHz). The SA3601 also contains a frequency doubler
that can drive the HB mixer local oscillator (LO) port, allowing a
single-band voltage controlled oscillator (VCO) to be used to drive
both mixers. Modes for bypassing the doubler are also provided, in
the case where a dual-band VCO is used.
The SA3601 has eight modes of operation that control the LNAs,
mixers, LO buffers and doubler . The select pins (PD1,2,3) are used
to change modes of operation. The internal select logic powers the
device down (0,0,0), turns on the LB LO buffer for use in transmit
mode (0,0,1), enables cellular receive mode for high and low gain
(0,1,X), enables PCS receive mode for high and low gain both
without doubler (1,1,X) and with doubler (1,0,X).
Low-Band Receive Section
The LB circuit contains a LNA followed by a wide dynamic range
active mixer. In a typical application circuit, the LNA output uses an
external pull-up inductor to VCC and is AC coupled. The mixer IF
outputs are differential and are combined with the high-band IF
mixer outputs thereby eliminating the need for extra output pins.
External inductors and capacitors can be used to convert the
differential mixer outputs to single-ended. Furthermore, the LNA
provides two gain settings: high gain (17dB) and low gain (–15 dB).
The desired gain state can be selected by setting the logic pins
(PD1,PD2,PD3) appropriately.
High-Band Receive Section
The HB circuit contains a LNA followed by a Gilbert cell mixer with
differential inputs. The LNA output uses an internal pull-up inductor
to VCC , which eliminates the need for an external pull-up. The
mixer IF outputs are differential and are combined with the low-band
IF mixer outputs thereby eliminating the need for extra output pins.
Similar to the LB LNA, the HB LNA has two gain settings: high gain
(16 dB) and low gain (–15 dB).
Control Logic Section
Pins PD1, PD2, and PD3, control the logic functions of the SA3601.
The PD1 selects between LB and HB operations. In LB receive
mode, the LB LNA is in high gain mode (or on) when PD1,2,3 are
(0,1,1). In all other modes, the LB LNA is off. The LB mixer is on
when PD1,2,3 are (0,1,X). In all other modes, the LB mixer is off.
During transmit mode when PD1,2,3 are (0,0,1), the LB LO buffer is
on, enabling use of the LO signal for the transmitter.
In HB receive mode, the HB LNA is in high gain mode (or on) when
PD1,2,3 are (1,X,1). In all other modes, the HB LNA is off. The HB
mixer is on when PD1,2,3 are (1,X,X), and is off in all other modes.
The on-chip frequency doubler (X2) is on in (1,0,X) modes. When
the frequency doubler is on, the input signal from the LB LO buffer is
doubled in frequency, which can then be used to drive the HB mixer
LO port. The frequency doubler can also be bypassed in modes
(1,1,X), in which case the HB mixer is driven directly by an external
2 GHz LO signal.
1999 Nov 09
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Philips Semiconductors Preliminary specification
SYMBOL
PARAMETER
UNITS
SYMBOL
PARAMETER
UNIT
I
SA3601Low voltage dual-band RF front-end
ABSOLUTE MAXIMUM RATINGS
V
CC
V
IN
P
D
T
J MAX
P
MAX
I
MAX
T
STG
T
O
Supply voltage –0.3 +4.5 V
Voltage applied to any other pin –0.3 VCC+0.3 V
Power dissipation, T
amb
Maximum junction temperature 150 °C
Power input/output +20 dBm
DC current into any I/O pin –10 +10 mA
Storage temperature range –65 +150 °C
Operating temperature –40 +85 °C
1
= +25 °C (still air) TBD mW
NOTES:
1. IC is protected for ESD voltages up to 500 V (human body model).
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
V
CC
= +3.0 V, T
CC
V
IH
V
IL
I
BIAS
= +25°C; unless otherwise specified
amb
TEST CONDITIONS TESTER LIMITS
PD1 PD2 PD3 MIN TYP MAX
Sleep mode 0 0 0 0.1 1 µA
Tx mode, LO lowband buffer 0 0 1 4.3 5.5 mA
Rx mode cellular, low gain 0 1 0 10.1 12 mA
Rx mode cellular, high gain 0 1 1 14 16.5 mA
Rx mode PCS, low gain, x2 1 0 0 17.5 21 mA
Rx mode PCS, high gain, x2 1 0 1 23.5 28 mA
Rx mode PCS, low gain, no x2 1 1 0 10 TBD mA
Rx mode PCS, high gain, no x2 1 1 1 15.5 TBD mA
Input HIGH voltage 0.5xV
Input LOW voltage –0.3 0.2xV
Input bias current Logic 1 or logic 0 –5 +5 µA
LIMITS
MIN. MAX.
CC
VCC+0.3 V
CC
V
1999 Nov 09
6
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Philips Semiconductors Preliminary specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
SA3601Low voltage dual-band RF front-end
AC ELECTRICAL CHARACTERISTICS
V
= +3.0 V, fRF = 881 MHz, fLO = 963 MHz, T
CC
Cascaded Gain Section
G
SYS
G
BYP
LB LNA + Mixer, High Gain Filter loss = 3 dB 20.5 23.5 26.5 dB
LB LNA + Mixer, Low Gain Filter loss = 3 dB –11.5 –8.5 –5.5 dB
Low-band LNA Section
f
G
NF
IIP3
P1dB
G
NF
IIP3
Z
Z
OUT
T
RF
ENA
ENA
BYP
BYP
IN
SW
RF input frequency range 869 894 MHz
Small signal gain ENABLED 17 dB
Noise figure ENABLED 1.7 dB
Input 3rd order Intercept Point –7 dBm
ENA
Input 1 dB Compression Point –20 dBm
ENA
Small signal gain BYPASSED –15 dB
Noise figure BYPASSED 15 dB
Input 3rd order Intercept Point 15 dBm
BYP
Input return loss 50 Ω system 10 dB
Output return loss 50 Ω system 10 dB
ENABLE/DISABLE speed
1
Low-band Mixer Section
f
f
G
NF
IIP3
P1dB
P
Z
Z
OUT
RF
f
IF
LO
MXR
MXR
LO
IN
RF input frequency range 869 894 MHz
IF output frequency range 70 200 MHz
LO input range 939 1100 MHz
Small signal gain PLO = –5 dBm 9.5 dB
SSB Noise figure PLO = –5 dBm 9.5 dB
Input 3rd order Intercept Point PLO = –5 dBm 6 dBm
MXR
Input 1 dB Compression Point P
MXR
LO input power range –7 –5 –3 dBm
Input return loss 50 Ω system 10 dB
Output return loss 50 Ω system 10 dB
Two-tone spurious rejection: PLO = –5 dBm
2-Tone
2(fRF–fTx), fRF–fTx=fIF/2
3(fRF–fTx), fRF–fTx=fIF/3
RF–LO RF to LO isolation 25 dB
LO–RF LO to RF isolation 40 dB
T
SW
ENABLE/DISABLE speed
1
Low-band LO Buffer Section
P
Z
P
P
OUT
Z
OUT
LO
IN
LO Input frequency range 939 1100 MHz
LO Input power 50 Ω matched LB_VCO_IN –7 –5 –3 dBm
IN
LO Output power 50 Ω matched LB_VCO_OUT –7.5 dBm
Input return loss 50 Ω system 10 dB
Output return loss 50 Ω system 10 dB
Harmonic content PLO = –5 dBm –20 dBc
T
SW
ENABLE/DISABLE speed
1
= +25°C, unless otherwise specified
amb
= –5 dBm –14 dBm
LO
fRF=890.0 MHz @–36 dBm
fTx=848.9 MHz @–20 dBm
fRF=876.3 MHz @–36 dBm
fTx=848.9 MHz @–20 dBm
LIMITS
MIN. –3 σ TYP +3 σ MAX.
20 µs
–110
–110
20 µs
20 µs
dBm
1999 Nov 09
7
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Philips Semiconductors Preliminary specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
NF
IIP3
IF/2 rej
RF
dBm
SA3601Low voltage dual-band RF front-end
AC ELECTRICAL CHARACTERISTICS
V
= +3.0 V, fRF = 1960 MHz, fLO = 2042 MHz, T
CC
Cascaded Gain Section
G
SYS
G
BYP
HB LNA + Mixer, High Gain Filter loss = 3 dB 18.5 21.5 24.5 dB
HB LNA + Mixer, Low Gain Filter loss = 3 dB –12.5 –9.5 –6.5 dB
High-band LNA Section
f
G
NF
IIP3
P1dB
G
NF
IIP3
Z
Z
OUT
T
RF
ENA
ENA
BYP
BYP
IN
SW
RF input frequency range 1930 1990 MHz
Small signal gain ENABLED 16 dB
Noise figure ENABLED 2.2 dB
Input 3rd order Intercept Point –5 dBm
ENA
Input 1 dB Compression Point –14 dBm
ENA
Small signal gain BYPASSED –15 dB
Noise figure BYPASSED 15 dB
Input 3rd order Intercept Point 15 dBm
BYP
Input return loss 50 Ω system, ENA and BYP 10 dB
Output return loss 50 Ω system, ENA and BYP 10 dB
ENABLE/DISABLE speed
1
High-band Mixer Section
G
f
RF
f
IF
f
LO
MXR
RF input frequency range 1930 1990 MHz
IF output frequency range 70 200 MHz
LO input range 2000 2190 MHz
Small signal gain PLO = –5 dBm 8.5 dB
SSB Noise figure, doubler off PLO = –5 dBm 8.5 dB
MXR
SSB Noise figure, doubler on PLO = –5 dBm 9 dB
Input 3rd order Intercept Point, doubler off PLO = –5 dBm 5.5 dBm
MXR
Input 3rd order Intercept Point, doubler on PLO = –5 dBm 3 dBm
P1dB
Input 1 dB Compression Point PLO = –5 dBm –14 dBm
MXR
Half-IF spurious rejection
2(fRF–fLO), fRF–fLO=fIF/2, doubler off
.
Half-IF spurious rejection
IF/3 rej.
2(f
Third-IF spurious rejection
3(fRF–fLO), fRF–fLO=fIF/3
), fRF–fLO=fIF/2, doubler on
RF–fLO
Two-tone spurious rejection: PLO = –5 dBm,
2-Tone
fRF–fTx, fRF–fTx=f
2(fRF–fTx), fRF–fTx=fIF/2
IF
3(fRF–fTx), fRF–fTx=fIF/3
Z
P
Z
OUT
LO
IN
LO input power range –7 –5 –3 dBm
Input return loss 50 Ω system 10 dB
Output return loss 50 Ω system 10 dB
RF–LO RF to LO isolation 40 dB
LO–RF LO to RF isolation 30 dB
T
SW
ENABLE/DISABLE speed
1
= +25°C, unless otherwise specified
amb
fRF=1972.0 MHz @–36 dBm
fLO=2013.1 MHz @–5 dBm
fRF=1985.7 MHz @–36 dBm
fLO=2013.1 MHz @–5 dBm
fRF=1933.0 MHz @–36 dBm
fTx=1850.8 MHz @–20 dBm
fRF=1951.0 MHz @–36 dBm
fTx=1909.9 MHz @–20 dBm
fRF=1937.3 MHz @–36 dBm
fTx=1909.9 MHz @–20 dBm
LIMITS
MIN. –3 σ TYP +3 σ MAX.
20 µs
–90
–85
–114 dBm
–70
–115
–125
20 µs
dBm
1999 Nov 09
8
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Philips Semiconductors Preliminary specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
SA3601Low voltage dual-band RF front-end
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0 V, T
High-band LO Buffer Section
P
LO
P
IN
P
OUT
Z
IN
Z
OUT
T
SW
x2 LO Doubler Section
f
LO
P
IN
Z
IN
Z
OUT
T
SW
NOTES:
1. Dependent on external components.
= +25°C, unless otherwise specified
amb
LIMITS
MIN. –3 σ TYP +3 σ MAX.
LO Input frequency range 2000 2190 MHz
LO Input power 50 Ω matched HB_VCO_IN –7 –5 –3 dBm
LO Output power 50 Ω matched HB_VCO_OUT –8 dBm
Input return loss 50 Ω system 10 dB
Output return loss 50 Ω system 10 dB
Harmonic content PLO = –5 dBm –20 dBc
ENABLE/DISABLE speed
1
20 µs
LO Input frequency 1000 1095 MHz
LO Input power 50 Ω matched LB_VCO_IN –7 –5 –3 dBm
Input return loss 50 Ω system 10 dB
Output return loss 50 Ω system 10 dB
ENABLE/DISABLE speed
1
20 µs
1999 Nov 09
9
Page 10
Philips Semiconductors Preliminary specification
SA3601Low voltage dual-band RF front-end
PIN NO
PIN MNEMONIC DC V EQUIVALENT CIRCUIT
1 HB LNA IN 0.8
3, 7, 23 V
CC
4 HB MXR+ IN 1.2
5 HB MXR– IN 1.2
6 PD1
V
BIAS
5K
SR01787
V
CC
V
BIAS
SR01788
9 PD2 Apply externally
15 PD3
12 LB VCO OUT VCC – 0.2 V
14 HB VCO IN 1.9
SR01789
V
CC
SR01791
V
V
CC
BIAS
V
BIAS
1999 Nov 09
SR01792
10
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Philips Semiconductors Preliminary specification
Pull-u externally to V
SA3601Low voltage dual-band RF front-end
PIN NO EQUIVALENT CIRCUITDC VPIN MNEMONIC
V
CC
17 LB VCO IN 1.0
SR01793
V
CC
2 pF
19 MXR– OUT
V
CC
p
20 MXR+ OUT
22 LB MXR IN 1.2
25 LB LNA IN 0.8
CC
2 pF
SR01794
V
BIAS
V
CC
SR01795
V
BIAS
V
CC
5K
1999 Nov 09
SR01796
11
Page 12
Philips Semiconductors Preliminary specification
SA3601Low voltage dual-band RF front-end
PIN NO EQUIVALENT CIRCUITDC VPIN MNEMONIC
V
CC
28 LB LNA OUT Pull-up externally to V
30 HB LNA OUT
CC
SR01797
V
CC
SR01786
1999 Nov 09
12
Page 13
Philips Semiconductors Preliminary specification
SA3601Low voltage dual-band RF front-end
HBCC32: plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm SOT560-1
1999 Nov 09
13
Page 14
Philips Semiconductors Preliminary specification
SA3601Low voltage dual-band RF front-end
Data sheet status
Data sheet
status
Objective
specification
Preliminary
specification
Product
specification
Product
status
Development
Qualification
Production
Definition
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1]
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 2000
All rights reserved. Printed in U.S.A.
Date of release: 04-00
Document order number: 9397 750 07037
1999 Nov 09
14
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