Datasheet SA3600 Datasheet (Philips)

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Page 1

INTEGRATED CIRCUITS

SA3600

Low voltage dual-band RF front-end

Product specification Supersedes data of 1999 March 18

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1999 Nov 02

Page 2

Philips Semiconductors Product specification

TYPE NUMBER

SA3600Low voltage dual-band RF front-end

DESCRIPTION

The SA3600 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz f

BiCMOS process—QUBiC2.

The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm.

The high-band (HB) receiver is a combined low-noise amplifier (LNA) and mixer, with the low-band and high-band mixers sharing the same mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.

FEATURES

•Low current consumption: LB I

= 14.5 mA; HB ICC = 20.5 mA

•Outstanding low- and high-band noise figure

•LNAs with gain control (30 dB gain step)

•LO input and output buffers

•Selectable frequency doubler

•On chip logic for network selection and power down

•Very small outline package

APPLICATIONS

•800 to 1000 MHz analog and digital receivers

•1800 to 2000 MHz digital receivers

•Portable radios

•Mobile communications equipment

PIN CONFIGURATION

HB_LNA_OUT

GND

HB_LNA_IN

HB_MXR+_IN

HB_MXR–_IN

PD1

GND

HB_VCO_OUT

PD2

GND

LB_VCO_OUT

1 2 3 4

5 6 7 8

9 10 11 12 13

LB_LNA_OUT

24 23

GND

LB_LNA_IN

LB_MXR_IN

GND

MXR+_OUT

MXR–_OUT

GND

LB_VCO_IN PD3

HB_VCO_IN

SR01596

ORDERING INFORMA TION

PACKAGE

NAME DESCRIPTION VERSION

SA3600 TSSOP24 Plastic thin shrink small outline package; 24 leads; body width 4.4 mm SOT355–1

PIN DESCRIPTIONS

PIN NO.

PIN NAME DESCRIPTION

1 HB_LNA_OUT Highband LNA output 13 HB_VCO_IN Highband VCO input 2 GND Ground 14 PD3 Power down control 3 3 HB_LNA_IN Highband LNA input 15 LB_VCO_IN Lowband VCO input 4 Vcc Power supply 16 GND Ground 5 HB_MXR+_IN Highband mixer positive input 17 MXR–_OUT Mixer negative output 6 HB_MXR–_IN Highband mixer negative input 18 MXR+_OUT Mixer positive output 7 PD1 Power down control 1 19 GND Ground 8 GND Ground 20 LB_MXR_IN Lowband mixer input

9 HB_VCO_OUT Highband VCO buffered output 21 V 10 PD2 Power down control 2 22 LB_LNA_IN Lowband LNA input 11 GND Ground 23 GND Ground 12 LB_VCO_OUT Lowband VCO buffered output 24 LB_LNA_OUT Lowband LNA output

PIN NO.

PIN NAME DESCRIPTION

Power supply

1999 Nov 02 853–2183 22617

Page 3

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

BLOCK DIAGRAM

LB_LNA_OUT

GND

LB_LNA_IN

LB_MXR_IN

GND

MXR+_OUT

MXR–_OUT

GND

LB_VCO_IN

PD3

HB_VCO_IN

SR01594

HB_LNA_OUT

GND

HB_LNA_IN

HB_MXR+_IN

HB_MXR–_IN

PD1

GND

HB_VCO_OUT

PD2

GND

LB_VCO_OUT

12 13

SA3600

Figure 1. Block Diagram

MODE SELECT LOGIC

PD1 PD2 PD3 OPERATING MODE

0 0 0 Sleep mode off off off off off off off 0 0 1 Tx mode, LO lowband buffer off off off off off on off 0 1 0 Rx mode cellular, low gain off on off off off on off 0 1 1 Rx mode cellular, high gain on on off off off on off 1 0 0 Rx mode PCS, low gain, x2 off off off on on on off 1 0 1 Rx mode PCS, high gain, x2 off off on on on on off 1 1 0 Rx mode PCS, low gain, no x2 off off off on off off on 1 1 1 Rx mode PCS, high gain, no x2 off off on on off off on

Cel

LNA

Cel

MXR

PCS LNA

PCS MXRx2DBL

LB LO

O/P

HB LO

O/P

1999 Nov 02

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Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

OPERA TION

The SA3600 is a highly integrated dual-band radio frequency (RF) front-end integrated circuit (IC) targeted for TDMA applications. This IC is split into separate low-band (LB) and high-band (HB) receivers. The LB receiver contains a low noise amplifier (LNA) and mixer that are designed to operate in the cellular frequency range (869–894MHz). The HB receiver contains an LNA and mixer that are designed to operate in the PCS frequency range (1930–1990 MHz). The SA3600 also contains a frequency doubler that can drive the HB mixer local oscillator (LO) port, allowing a single-band voltage controlled oscillator (VCO) to be used to drive both mixers. Modes for bypassing the doubler are also provided, in the case where a dual-band VCO is used.

The SA3600 has eight modes of operation that control the LNAs, mixers, LO buffers and doubler . The select pins (PD1,2,3) are used to change modes of operation. The internal select logic powers the device down (0,0,0), turns on the LB LO buffer for use in transmit mode (0,0,1), enables cellular receive mode for high and low gain (0,1,X), enables PCS receive mode for high and low gain both without doubler (1,1,X) and with doubler (1,0,X).

Low-Band Receive Section

The LB circuit contains a LNA followed by a wide dynamic range active mixer. In a typical application circuit, the LNA output uses an external pull-up inductor to VCC and is AC coupled. The mixer IF outputs are differential and are combined with the high-band IF mixer outputs thereby eliminating the need for extra output pins. External inductors and capacitors can be used to convert the differential mixer outputs to single-ended. Furthermore, the LNA provides two gain settings: high gain (17dB) and low gain (–15 dB). The desired gain state can be selected by setting the logic pins (PD1,PD2,PD3) appropriately.

High-Band Receive Section

The HB circuit contains a LNA followed by a Gilbert cell mixer with differential inputs. The LNA output uses an internal pull-up inductor to VCC , which eliminates the need for an external pull-up. The mixer IF outputs are differential and are combined with the low-band IF mixer outputs thereby eliminating the need for extra output pins. Similar to the LB LNA, the HB LNA has two gain settings: high gain (16 dB) and low gain (–15 dB).

Control Logic Section

Pins PD1, PD2, and PD3, control the logic functions of the SA3600. The PD1 selects between LB and HB operations. In LB receive mode, the LB LNA is in high gain mode (or on) when PD1,2,3 are (0,1,1). In all other modes, the LB LNA is off. The LB mixer is on when PD1,2,3 are (0,1,X). In all other modes, the LB mixer is off. During transmit mode when PD1,2,3 are (0,0,1), the LB LO buffer is on, enabling use of the LO signal for the transmitter.

In HB receive mode, the HB LNA is in high gain mode (or on) when PD1,2,3 are (1,X,1). In all other modes, the HB LNA is off. The HB mixer is on when PD1,2,3 are (1,X,X), and is off in all other modes. The on-chip frequency doubler (X2) is on in (1,0,X) modes. When the frequency doubler is on, the input signal from the LB LO buffer is doubled in frequency, which can then be used to drive the HB mixer LO port. The frequency doubler can also be bypassed in modes (1,1,X), in which case the HB mixer is driven directly by an external 2 GHz LO signal.

Local Oscillator (LO) Section

The LB LO buffers are on for all modes except sleep mode, when PD1,2,3 are (0,0,0), and for HB receive mode without doubler, PD1,2,3 are (1,1,X). The HB LO buffers are on only when PD1,2,3 are (1,1,X). The PD1,2,3 pins are used to power-up/down all LO input buffers, which minimizes the pulling effect on the external VCO when entering receive or transmit mode.

1999 Nov 02

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

UNITS

SYMBOL

PARAMETER

UNIT

SA3600Low voltage dual-band RF front-end

ABSOLUTE MAXIMUM RATINGS

V V P T P I

MAX

T T

CC IN D J MAX MAX

STG O

Supply voltage –0.3 +4.5 V Voltage applied to any other pin –0.3 VCC+0.3 V Power dissipation, T

amb

Maximum junction temperature 150 °C Power input/output +20 dBm DC current into any I/O pin –10 +10 mA Storage temperature range –65 +150 °C Operating temperature –40 +85 °C

= +25 °C (still air) 555 mW

NOTES:

1. IC is protected against ESD voltages up to 500 V (human body model).

DC ELECTRICAL CHARACTERISTICS

Unless otherwise specified, all Input/Output ports are single-ended.

DC PARAMETERS

= +3.0 V, T

BIAS

= +25°C unless otherwise specified

amb

TEST CONDITIONS TESTER LIMITS

PD1 PD2 PD3 MIN TYP MAX

Sleep mode 0 0 0 0.1 1 µA Tx mode, LO lowband buffer 0 0 1 4.3 5.5 mA Rx mode cellular, low gain 0 1 0 10.1 12 mA Rx mode cellular, high gain 0 1 1 14 16.5 mA Rx mode PCS, low gain, x2 1 0 0 17.5 21 mA Rx mode PCS, high gain, x2 1 0 1 23.5 28 mA Rx mode PCS, low gain, no x2 1 1 0 14.5 17.5 mA Rx mode PCS, high gain, no x2 1 1 1 20.5 24.5 mA Input HIGH voltage 0.5xV Input LOW voltage –0.3 0.2xV Input bias current Logic 1 or logic 0 –5 +5 µA

LIMITS

MIN. MAX.

VCC+0.3 V

1999 Nov 02

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

SA3600Low voltage dual-band RF front-end

AC ELECTRICAL CHARACTERISTICS

= +3.0 V, fRF = 881 MHz, fLO = 963 MHz, T

Cascaded Gain Section

SYS

BYP

LB LNA + Mixer, High Gain Filter loss = 3 dB 20.5 23.5 26.5 dB LB LNA + Mixer, Low Gain Filter loss = 3 dB –11.5 –8.5 –5.5 dB

Low-band LNA Section

IIP3

P1dB

IIP3

OUT

RF ENA

ENA

BYP

RF input frequency range 869 894 MHz Small signal gain ENABLED 16.1 17 17.9 dB Noise figure ENABLED 1.5 1.7 1.9 dB Input 3rd order Intercept Point –8.1 –7 –5.9 dBm

ENA

Input 1 dB Compression Point –20 dBm

ENA

Small signal gain BYPASSED –15 dB Noise figure BYPASSED 15 dB Input 3rd order Intercept Point 15 dBm

BYP

Input return loss Output return loss ENABLE/DISABLE speed

Low-band Mixer Section

IIP3

P1dB

OUT

MXR

LO IN

RF input frequency range 869 894 MHz IF output frequency range 70 200 MHz LO input range 939 1100 MHz Small signal gain PLO = –5 dBm 9 9.5 10 dB SSB Noise figure PLO = –5 dBm 8.6 9.5 10.4 dB Input 3rd order Intercept Point PLO = –5 dBm 5.1 6 6.9 dBm

MXR

Input 1 dB Compression Point P

MXR

LO input power range –7 –5 –3 dBm Input return loss Output return loss

Two-tone spurious rejection: PLO = –5 dBm

2-Tone

2(fRF–fTx), fRF–fTx=fIF/2

3(fRF–fTx), fRF–fTx=fIF/3

RF–LO RF to LO isolation 25 dB LO–RF LO to RF isolation 40 dB

ENABLE/DISABLE speed

Low-band LO Buffer Section

OUT

LO Input frequency range 939 1100 MHz LO Input power 50 Ω matched LB_VCO_IN –7 –5 –3 dBm

LO Output power 50 Ω matched LB_VCO_OUT –8 –7.5 –7 dBm Input return loss Output return loss

Harmonic content PLO = –5 dBm –20 dBc

ENABLE/DISABLE speed

= +25°C, unless otherwise specified

amb

50 Ω system 10 dB 50 Ω system 10 dB

= –5 dBm –14 dBm

50 Ω system 10 dB 50 Ω system 10 dB

fRF=890.0 MHz @–36 dBm

fTx=848.9 MHz @–20 dBm

fRF=876.3 MHz @–36 dBm

fTx=848.9 MHz @–20 dBm

50 Ω system 10 dB 50 Ω system 10 dB

LIMITS

MIN. –3 σ TYP +3 σ MAX.

20 µs

–110

20 µs

dBm

1999 Nov 02

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

IIP3

IF/2 rej

dBm

SA3600Low voltage dual-band RF front-end

AC ELECTRICAL CHARACTERISTICS

= +3.0 V, fRF = 1960 MHz, fLO = 2042 MHz, T

Cascaded Gain Section

SYS

BYP

HB LNA + Mixer, High Gain Filter loss = 3 dB 18.5 21.5 24.5 dB HB LNA + Mixer, Low Gain Filter loss = 3 dB –12.5 –9.5 –6.5 dB

High-band LNA Section

IIP3

P1dB

IIP3

OUT

ENA

BYP

RF input frequency range 1930 1990 MHz Small signal gain ENABLED 15 16 17 dB Noise figure ENABLED 1.9 2.2 2.5 dB Input 3rd order Intercept Point –6.5 –5 –3.5 dBm

ENA

Input 1 dB Compression Point –14 dBm

ENA

Small signal gain BYPASSED –15 dB Noise figure BYPASSED 15 dB Input 3rd order Intercept Point 15 dBm

BYP

Input return loss

Output return loss 50 Ω system, ENA and BYP 10 dB ENABLE/DISABLE speed

High-band Mixer Section

MXR

RF input frequency range 1930 1990 MHz IF output frequency range 70 200 MHz LO input range 2000 2190 MHz Small signal gain PLO = –5 dBm 7.8 8.5 9.2 dB SSB Noise figure, doubler off PLO = –5 dBm 7.6 8.5 9.4 dB

MXR

SSB Noise figure, doubler on PLO = –5 dBm 8.1 9 9.9 dB Input 3rd order Intercept Point, doubler off PLO = –5 dBm 4 5.5 7 dBm

MXR

Input 3rd order Intercept Point, doubler on PLO = –5 dBm 1.9 3 4.1 dBm

P1dB

Input 1 dB Compression Point PLO = –5 dBm –14 dBm

MXR

Half-IF spurious rejection 2(fRF–fLO), fRF–fLO=fIF/2, doubler off

Half-IF spurious rejection

IF/3 rej.

2(f Third-IF spurious rejection

3(fRF–fLO), fRF–fLO=fIF/3

), fRF–fLO=fIF/2, doubler on

RF–fLO

Two-tone spurious rejection: PLO = –5 dBm,

2-tone

fRF–fTx, fRF–fTx=f

2(fRF–fTx), fRF–fTx=fIF/2

3(fRF–fTx), fRF–fTx=fIF/3

OUT

LO IN

LO input power range –7 –5 –3 dBm Input return loss Output return loss

RF–LO RF to LO isolation 40 dB LO–RF LO to RF isolation 30 dB

ENABLE/DISABLE speed

= +25°C, unless otherwise specified

amb

50 Ω system, ENA and BYP 10 dB

fRF=1972.0 MHz @–36 dBm

fLO=2013.1 MHz @–5 dBm

fRF=1985.7 MHz @–36 dBm

fLO=2013.1 MHz @–5 dBm

fRF=1933.0 MHz @–36 dBm

fTx=1850.8 MHz @–20 dBm

fRF=1951.0 MHz @–36 dBm

fTx=1909.9 MHz @–20 dBm

fRF=1937.3 MHz @–36 dBm

fTx=1909.9 MHz @–20 dBm

50 Ω system 10 dB 50 Ω system 10 dB

LIMITS

MIN. –3 σ TYP +3 σ MAX.

20 µs

–90

–85

–114 dBm

–70

–115

–125

20 µs

dBm

1999 Nov 02

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA3600Low voltage dual-band RF front-end

AC ELECTRICAL CHARACTERISTICS

VCC = +3.0 V, T

High-band LO Buffer Section

OUT

x2 LO Doubler Section

OUT

NOTES:

1. Dependent on external components.

2. External matching required.

= +25°C, unless otherwise specified

amb

LIMITS

MIN. –3 σ TYP +3 σ MAX.

LO Input frequency range 2000 2190 MHz LO Input power 50 Ω matched HB_VCO_IN –7 –5 –3 dBm LO Output power 50 Ω matched HB_VCO_OUT –8.8 –8 –7.2 dBm Input return loss Output return loss

50 Ω system 10 dB

50 Ω system 10 dB Harmonic content PLO = –5 dBm –20 dBc ENABLE/DISABLE speed

20 µs

LO Input frequency 1000 1095 MHz LO Input power 50 Ω matched LB_VCO_IN –7 –5 –3 dBm Input return loss Output return loss ENABLE/DISABLE speed

50 Ω system 10 dB

20 µs

1999 Nov 02

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Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

PIN NO

PIN MNEMONIC DC V EQUIVALENT CIRCUIT

1 HB LNA OUT

3 HB LNA IN 0.8

4 V

SR01786

BIAS

SR01787

BIAS

5 HB MXR+ IN 1.2

6 HB MXR– IN 1.2

7 PD1

10 PD2 Apply externally

14 PD3

9 HB VCO OUT Pull-up externally to V

SR01788

SR01789

1999 Nov 02

SR01790

Page 10

Philips Semiconductors Product specification

Pull-u externally to V

SA3600Low voltage dual-band RF front-end

PIN NO EQUIVALENT CIRCUITDC VPIN MNEMONIC

12 LB VCO OUT VCC – 0.2 V

SR01791

13 HB VCO IN 1.9

BIAS

15 LB VCO IN 1.0

17 MXR– OUT

18 MXR+ OUT

2 pF

SR01792

SR01793

2 pF

1999 Nov 02

SR01794

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Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

PIN NO EQUIVALENT CIRCUITDC VPIN MNEMONIC

BIAS

20 LB MXR IN 1.2

SR01795

BIAS

22 LB LNA IN 0.8

24 LB LNA OUT Pull-up externally to V

SR01796

SR01797

1999 Nov 02

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Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

PERFORMANCE CHARACTERISTICS

VCC = +3.0 V, T

= +25_C; unless otherwise specified.

amb

0.20

0.15

0.10

Icc (uA)

0.05

00.0

2.5 3.0 3.5 4.0 VCC (V)

Figure 2. ICC versus VCC (mode 000 – sleep mode)

5.0

4.8

4.6

4.4

Icc (mA)

+85° C

4.2 +25° C

4.0

2.5 3.0 3.5 4.0

–40° C

VCC (V)

+85° C

+25° C

–40° C

SR02201

SR02202

16.0

15.0 +85° C

14.0

+25° C

13.0

Icc (mA)

–40° C

12.0

11.0

2.5 3.0 3.5 4.0

(V)

SR02204

Figure 5. ICC versus VCC (mode 011 – LB receive, high gain)

19.0

18.5

18.0

17.5 +85° C,

Icc (mA)

+25° C

17.0

16.5

2.5 3.0 3.5 4.0

–40° C

VCC (V)

SR02205

Figure 3. ICC versus VCC (mode 001 – transmit mode)

11.0

10.5

Icc (mA)

–40° C, +25° C

10.0

+85° C

9.5

2.5 3.0 3.5 4.0 VCC (V)

SR02203

Figure 4. ICC versus VCC (mode 010 – LB receive, low gain)

Figure 6. ICC versus VCC (mode 100 – HB receive, low gain,

doubler on)

26.5

25.0

+85° C

23.5

Icc (mA)

+25° C

22.0 –40° C

20.5

2.5 3.0 3.5 4.0

VCC (V)

SR02206

Figure 7. ICC versus VCC (mode 101 – HB receive, high gain,

doubler on)

1999 Nov 02

Page 13

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

16.0

15.5

15.0

Icc (mA)

14.5

14.0

+85° C

+25° C

2.5 3.0 3.5 4.0

–40° C

VCC (V)

SR02207

Figure 8. ICC versus VCC (mode 110 – HB receive, low gain,

doubler off)

24.0

22.0 +85° C

+25° C

20.0

Icc (mA)

–40° C

18.0

16.0

2.5 3.0 3.5 4.0 VCC (V)

SR02208

–13.0

–14.0

–15.0

–16.0

Low gain (dB)

–17.0

–18.0

865 870 875 880 885 890 895 900

Frequency (MHz)

Figure 11. LB LNA low gain versus frequency

3.0

2.5 +85° C

2.0

+25° C

NF (dB)

–40° C

1.5

1.0

865 870 875 880 885 890 895 900

Frequency (MHz)

–40° C

+25° C

+85° C

SR02210

SR02211

Figure 9. ICC versus VCC (mode 111 – HB receive, high gain,

doubler off)

18.0

17.5

17.0

Gain (dB)

16.5 +85° C

16.0

865 870 875 880 885 890 895 900

Frequency (MHz)

–40° C

+25° C

SR02209

Figure 10. LB LNA gain versus frequency

Figure 12. LB LNA noise figure versus frequency

(high gain mode)

–4.0

–6.0

+85° C

+25° C

IIP3 (dBm)

–8.0

–40° C

–10.0

865 870 875 880 885 890 895 900

Frequency (MHz)

Figure 13. LB LNA IIP3 versus frequency

(high gain mode)

SR02212

1999 Nov 02

Page 14

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

–18.0

–19.0

–20.0

1 dB (dBm)

–21.0

–22.0

865 870 875 880 885 890 895 900

Frequency (MHz)

+25° C

+85° C

–40° C

SR02213

Figure 14. LB LNA 1 dB compression versus frequency

(high gain mode)

–11.0

–12.0 –13.0

–14.0

1 dB (dBm)

–15.0

–16.0

–17.0

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

+85° C

+25° C

–40° C

SR02214

2000

–12.0 –13.0

–14.0 –15.0

–16.0

Low gain (dB)

–17.0 –18.0

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

Figure 17. HB LNA low gain versus frequency

3.0 +85° C

2.5

+25° C

2.0

–40° C

IIP3 (dBm)

1.5

1.0

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

–40° C

+25° C

+85° C

2000

SR02216

2000

SR02217

Figure 15. HB LNA 1 dB compression versus frequency

(high gain mode)

17.0

16.5

16.0

Gain (dB)

15.5

15.0

–40° C

+25° C

+85° C

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

SR02215

Figure 16. HB LNA gain versus frequency

2000

Figure 18. HB LNA noise figure versus frequency

(high gain mode)

0.0

–2.0

+85° C

–4.0

+25° C

–6.0

IIP3 (dBm)

–40° C

–8.0

–10.0

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

Figure 19. HB LNA IIP3 versus frequency

(high gain mode)

2000

SR02218

1999 Nov 02

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Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

11.0

10.0

9.0

Gain (dB)

8.0

7.0 865 870 875 880 885 890 895 900

Frequency (MHz)

–40° C

+25° C

+85° C

SR02219

Figure 20. LB mixer conversion gain versus frequency

12.0

11.0

10.0

9.0

NF (dB)

8.0

7.0 865 870 875 880 885 890 895 900

Frequency (MHz)

+85° C

+25° C

–40° C

SR02220

Figure 21. LB mixer noise figure versus frequency

–12.0

–13.0

–14.0

1 dB (dBm)

–15.0

–16.0

865 870 875 880 885 890 895 900

Frequency (MHz)

–40° C

+25° C +85° C

SR02222

Figure 23. LB mixer 1 dB compression versus frequency

10.0

–40° C

9.0 +25° C

8.0 +85° C

Gain (dB)

7.0

6.0 1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

2000

SR02224

Figure 24. HB mixer conversion gain versus frequency,

doubler off

10.0 –40° C

8.0 +25° C

6.0

IIP3 (dBm)

4.0 +85° C

2.0

0.0

865 870 875 880 885 890 895 900

Frequency (MHz)

Figure 22. LB mixer input IP3 versus frequency

1999 Nov 02

SR02221

11.0

10.0

9.0 –40° C

NF (dB)

8.0

7.0

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

Figure 25. HB mixer noise figure versus frequency,

doubler off

+85° C +25° C

2000

SR02225

Page 16

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

10.0

8.0 +25° C

6.0

4.0

IIP3 (dBm)

2.0

0.0

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

Figure 26. HB mixer input IP3 versus frequency,

doubler off

–13.0

–13.5

–14.0

1 dB (dBm)

–14.5

–15.0

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

–40° C

+85° C

–40° C

2000

SR02226

+25° C

2000

SR02227

–82.0

–84.0

–86.0

–88.0

Half–IF Spur (dBm)

–90.0

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

–40° C

+85° C

Figure 29. HB mixer half-IF spur versus frequency

(input = –36 dBm, doubler on)

10.0

9.0

8.0

Gain (dB)

7.0

6.0 1920 1930 1940 1950 1960 1970 1980 1990 2000

Frequency (MHz)

+25° C

2000

SR02228

–40° C

+25° C

+85° C

SR02229

Figure 27. HB mixer 1 dB compression versus frequency,

doubler off

–86.0

–88.0

–90.0

–92.0

–94.0

Half–IF spur (dBm)

–96.0

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

–40° C

+25° C

+85° C

SR02223

Figure 28. HB mixer half-IF spur versus frequency

(input = –36 dBm, doubler off)

2000

Figure 30. HB mixer conversion gain versus frequency,

doubler on

12.0

11.0

10.0

NF (dB)

9.0

8.0

7.0 1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

+85° C

+25° C

–40° C

SR02230

Figure 31. HB mixer noise figure versus frequency,

doubler on

2000

1999 Nov 02

Page 17

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

6.0

5.0

4.0

3.0

2.0

IIP3 (dBm)

1.0

0.0 1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

Figure 32. HB mixer input IP3 versus frequency,

doubler on

30.0 +25° C

28.0

IIP2 (dBm)

26.0

24.0

1920 1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

+85° C

–40° C

+85° C

+25° C

–40° C

2000

SR02231

2000

SR02232

–5.0

–6.0

–7.0

–8.0

–9.0

Lo output power (dBm)

–10.0

950 955 960 965 970 975 980

Frequency (MHz)

–40° C

+25° C

+85° C

SR02233

Figure 34. LB LO output power versus frequency (mode 010)

–6.0

–7.0

–8.0

–9.0

–10.0

LO output power (dBm)

–11.0

2010 2020 2030 2040 2050 2060 2070

Frequency (MHz)

–40° C

+25° C

+85° C

2080

SR02234

Figure 33. HB mixer input IP2 versus frequency,

doubler on

Figure 35. HB LO output power versus frequency

(mode 110)

1999 Nov 02

Page 18

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

RF Source

3 dB Pad

RF Meas.

220 pF

5.6 nh

PMU

10 kΩ

PMU

100 pF

220 pF

PMU

220 pF

1 kΩ

PMU

4.7 nh

PMU

100 pF

PMU

100 pF

10 nh

1 kΩ

10 kΩ

0.01 µF

0.1 pF

10 kΩ

HB_LNA_OUT

100 pF

HB_MXR+_IN

HB_MXR–_IN

HB_VCO_OUT

0.1 µF

LB_VCO_OUT

GND

HB_LNA_IN

PD1

GND

PD2

GND

12 13

LB_LNA_OUT

GND

LB_LNA_IN

LB_MXR_IN

GND

MXR+_OUT

MXR–_OUT

GND

LB_VCO_IN

PD3

0.1 µF

HB_VCO_IN

10 nh

PMU

220 pF 1.8 pF

10 kΩ

6.8 pF

10 kΩ

PMU

8.2 pF

470 nh

8.2 pF

10 kΩ

18 pF

1 k

2.7 pF

10 kΩ

PMU

0.01 µF100 pF

220 pF

PMU

12 nh

RF Source

PMU

470 nh

10 pF

PMU

10 nh

4.7 nh

3 dB Pad

18 nh

100 pF

RF Meas.

RF Source

PMU

0.01 µF

SR02235

Figure 36. SA3600 production test circuit schematic

1999 Nov 02

Page 19

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

J1 SMA

HBLOUT

J2 SMA

HBLIN

J3 SMA

HBMIN

J4 SMA

HBLOOUT

J5 SMA

LBLOOUT

J12 V

GND

C9 100pF

C11

1.2pF

R7 10

C10

5.6pF

C2 100pF

R1 10

1.8pF

2.7nH

L10 10nH

0.5pF

C3 100nF

1.8nH

2.7nH L5

1.8nH

1.8pF

R11 000

C24 22pF

R12 000

C4 100pF

C5 100pF

L11 UL

C6 100pF

PD1

PD2

PD3

HBLNA_OUT

HBLNA_IN

HBMIX_IN-P

L12 UL

HBMIX_IN-N

HBVCO_OUT

LBVCO_OUT

Sleep mode Tx mode, LO LB Buffer Rx mode cell, LO Gain Rx mode cell, HI Gain

Rx mode PCS, LO Gain X2

Rx mode PCS, HI Gain X2 Rx mode PCS, LO Gain No X2 Rx mode PCS, HI Gain No X2

R10

SA3600

0 0 0 0 1 1 1 1

C37 10nF

J11 SMA

0 0 1 1 0 0 1 1

L19 UL

R9 UL

GND

PD1

GND

PD2

GND

Mode Select PD1 PD2 PD3

12 13

L18 TOKO 8.2nH

R8 330

LBLNA_OUT

GND

LBLNA_IN

LBMIX_IN

GND

MIXER_OUT-P

MIXER_OUT-N

GND

LBVCO_IN

PD3

HBVCO_IN

C21 100pF

0 1 0 1 0 1 0 1

L13

2.7nH

LBLOUT

LBLIN

LBMIN

C30

2.2pF

82MHz IF

C22 1nF

MIXOUT

SR02236

J6 SMA

J7 SMA

J8 SMA

SMA

J10 SMA

C12

1.5pF

L16

8.2nH

C16 100pF

C28

6.8pF

L7 180nH

L6 180nH

C27

6.8pF

C25 100pF

C34 10nF

C33 1pF

R2 10

C18 1nF

C20 27pF

L8 120nH

C19 27pF

L9 120nH

C38 100pF

C13 100pF

C16 100nF

L15 22nH

R4 10k

R3 10k

C32

8.2pF 0402

C31

8.2pF 0402

C23 100pF

C26

100nF

1999 Nov 02

Figure 37. SA3600 Application circuit (fIF = 82 MHz)

Page 20

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

Table 1. Low-band LNA S-parameters (high gain mode)

Freq (MHz) |S11| (U) <S11 (deg) |S21| (U) <S21 (deg) |S12| (U) <S12 (deg) |S22| (U) <S22 (deg)

800 0.42 –89 5.19 89 0.006 14 0.98 –37 810 0.42 –89 5.17 89 0.006 19 0.98 –37 820 0.41 –90 5.11 88 0.005 45 0.98 –38 830 0.41 –91 5.11 87 0.004 11 0.98 –38 840 0.41 –91 5.03 86 0.008 14 0.98 –38 850 0.41 –92 4.97 85 0.007 –2 0.98 –39 860 0.40 –92 4.97 84 0.006 32 0.98 –40 870 0.40 –93 4.92 83 0.008 8 0.98 –40 880 0.40 –93 4.85 82 0.007 –9 0.98 –41 890 0.39 –93 4.84 81 0.006 –18 0.98 –42 900 0.39 –93 4.77 81 0.005 3 0.98 –42 910 0.39 –94 4.73 79 0.005 –12 0.97 –42 920 0.38 –94 4.67 79 0.009 3 0.98 –43 930 0.38 –94 4.61 78 0.007 13 0.98 –43 940 0.38 –95 4.55 77 0.003 –1 0.98 –44 950 0.37 –95 4.49 77 0.006 –33 0.98 –44 960 0.37 –95 4.43 76 0.005 –29 0.98 –44 970 0.37 –96 4.36 75 0.008 –46 0.98 –45 980 0.36 –96 4.30 75 0.006 8 0.97 –46

990 0.36 –96 4.25 74 0.009 –24 0.98 –47 1000 0.36 –97 4.23 74 0.005 21 0.98 –47 1010 0.36 –96 4.16 73 0.007 –8 0.98 –47 1020 0.36 –97 4.15 73 0.008 –20 0.98 –48 1030 0.36 –97 4.11 73 0.008 –22 0.97 –48 1040 0.35 –97 4.07 71 0.007 –55 0.97 –49 1050 0.35 –97 4.04 71 0.009 –35 0.98 –49

1999 Nov 02

Page 21

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

Table 2. Low-band LO input (pin 15) and output (pin 12) S-parameters

Freq(MHz) |S11| (U) <S11 (deg) |S22| (U) <S22 (deg)

670 0.37 –168 0.46 75 680 0.37 –168 0.47 73 690 0.35 –169 0.49 71 700 0.33 –171 0.50 69 710 0.32 –171 0.50 67 720 0.31 –171 0.51 66 730 0.30 –172 0.52 64 740 0.28 –171 0.53 63 750 0.27 –171 0.53 61 760 0.26 –170 0.54 60 770 0.25 –170 0.55 58 780 0.24 –168 0.56 56 790 0.23 –168 0.56 55 800 0.22 –165 0.58 54 810 0.21 –162 0.58 52 820 0.20 –160 0.59 51 830 0.20 –157 0.59 49 840 0.21 –153 0.60 48 850 0.21 –149 0.60 46 860 0.20 –147 0.61 45 870 0.21 –145 0.62 44 880 0.22 –141 0.62 42 890 0.23 –140 0.62 41 900 0.24 –137 0.63 40 910 0.25 –136 0.64 38 920 0.26 –136 0.64 37 930 0.27 –134 0.64 35 940 0.29 –134 0.65 35 950 0.30 –135 0.65 33 960 0.31 –134 0.65 32 970 0.32 –134 0.65 31 980 0.34 –135 0.66 30

990 0.35 –136 0.66 29 1000 0.37 –136 0.66 28 1010 0.38 –137 0.66 26 1020 0.39 –138 0.66 26 1030 0.41 –139 0.66 25 1040 0.42 –140 0.66 24 1050 0.43 –141 0.67 23 1060 0.44 –142 0.66 22

1999 Nov 02

Page 22

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

Table 2. Low-band LO input (pin 15) and output (pin 12) S-parameters (continued)

Freq(MHz) |S11| (U) <S11 (deg) |S22| (U) <S22 (deg)

1070 0.46 –143 0.66 21 1080 0.48 –144 0.66 21 1090 0.49 –145 0.66 20 1100 0.51 –147 0.66 20 1110 0.52 –150 0.67 19 1120 0.53 –151 0.67 18 1130 0.53 –153 0.67 18 1140 0.54 –155 0.67 18 1150 0.55 –156 0.68 17 1160 0.56 –157 0.68 16 1170 0.57 –159 0.68 16

1999 Nov 02

Page 23

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

Table 3. Mixer output S-parameters

Both pins (17, 18)

Freq(MHz) |S11| (U) <S11 (deg)

70 1.00 –8 80 1.00 –9

90 0.99 –10 100 0.99 –11 110 0.99 –12 120 0.99 –13 130 0.99 –14 140 0.99 –16 150 0.99 –16 160 0.99 –18 170 0.99 –19 180 0.99 –20 190 0.99 –21 200 0.99 –22

1999 Nov 02

Page 24

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

Table 4. Low-band mixer input S-parameters

Freq(MHz) |S11| (U) <S11 (deg)

800 0.84 –14 810 0.85 –14 820 0.85 –14 830 0.85 –15 840 0.84 –15 850 0.85 –15 860 0.85 –15 870 0.84 –15 880 0.85 –15 890 0.85 –15 900 0.84 –16 910 0.85 –15 920 0.84 –16 930 0.85 –16 940 0.85 –17 950 0.85 –17 960 0.85 –17 970 0.84 –17 980 0.85 –17

990 0.84 –18 1000 0.84 –18 1010 0.85 –18 1020 0.84 –18 1030 0.85 –19 1040 0.84 –19 1050 0.85 –19

1999 Nov 02

Page 25

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

Table 5. High-band LNA S-parameters

Freq (MHz) |S11| (U) <S11 (deg) |S21| (U) <S21 (deg) |S12| (U) <S12 (deg) |S22| (U) <S22 (deg)

1800 0.38 156 6.73 172 0.05 105 0.13 –106 1810 0.37 156 6.77 170 0.05 113 0.11 –100 1820 0.37 155 6.82 168 0.05 109 0.10 –95 1830 0.37 154 6.79 167 0.05 107 0.10 –88 1840 0.36 155 6.84 165 0.05 106 0.09 –74 1850 0.36 154 6.80 164 0.05 102 0.09 –67 1860 0.35 155 6.81 162 0.05 108 0.10 –51 1870 0.35 154 6.85 161 0.05 101 0.10 –47 1880 0.34 152 6.84 159 0.05 102 0.12 –41 1890 0.33 154 6.84 158 0.05 107 0.13 –36 1900 0.33 153 6.83 157 0.05 102 0.14 –32 1910 0.33 154 6.83 155 0.05 101 0.15 –30 1920 0.32 153 6.87 154 0.05 102 0.17 –28 1930 0.32 154 6.84 152 0.05 99 0.18 –28 1940 0.32 153 6.86 151 0.05 101 0.19 –26 1950 0.32 153 6.84 149 0.05 103 0.21 –26 1960 0.32 154 6.78 148 0.05 101 0.22 –26 1970 0.32 155 6.80 146 0.05 100 0.24 –26 1980 0.31 154 6.75 145 0.04 100 0.26 –26 1990 0.32 156 6.72 143 0.04 99 0.27 –27 2000 0.31 155 6.68 142 0.05 100 0.28 –27 2010 0.31 156 6.68 141 0.05 103 0.30 –30 2020 0.31 157 6.65 139 0.04 104 0.31 –31 2030 0.31 158 6.63 138 0.04 96 0.32 –30 2040 0.31 158 6.59 137 0.05 105 0.33 –32 2050 0.31 159 6.58 135 0.05 104 0.34 –34

1999 Nov 02

Page 26

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

Table 6. High-band LO input (pin 13) and output (pin 9) S-parameters

Freq(MHz) |S11| (U) <S11 (deg) |S22| (U) <S22 (deg)

1700 0.82 –36 0.31 86 1710 0.82 –36 0.30 85 1720 0.82 –37 0.29 83 1730 0.82 –36 0.29 81 1740 0.82 –37 0.29 81 1750 0.83 –37 0.27 79 1760 0.82 –37 0.26 76 1770 0.82 –38 0.25 76 1780 0.82 –38 0.24 74 1790 0.83 –39 0.24 72 1800 0.82 –39 0.23 71 1810 0.82 –39 0.21 69 1820 0.83 –40 0.20 68 1830 0.82 –40 0.20 66 1840 0.82 –41 0.18 67 1850 0.82 –41 0.16 63 1860 0.82 –42 0.16 61 1870 0.82 –42 0.14 60 1880 0.82 –42 0.12 56 1890 0.82 –43 0.11 52 1900 0.82 –43 0.11 53 1910 0.81 –44 0.08 47 1920 0.82 –44 0.07 42 1930 0.81 –45 0.06 34 1940 0.81 –46 0.04 29 1950 0.81 –46 0.03 –1 1960 0.81 –47 0.02 –21 1970 0.80 –47 0.03 –57 1980 0.80 –48 0.04 –85 1990 0.80 –48 0.05 –103 2000 0.80 –48 0.07 –112 2010 0.80 –49 0.08 –112 2020 0.80 –50 0.10 –119 2030 0.80 –51 0.12 –120 2040 0.79 –51 0.13 –125 2050 0.79 –52 0.15 –127 2060 0.79 –52 0.16 –130 2070 0.79 –52 0.18 –133 2080 0.78 –53 0.20 –135 2090 0.77 –54 0.21 –136

1999 Nov 02

Page 27

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

Table 6. High-band LO input (pin 13) and output (pin 9) S-parameters (continued)

Freq(MHz) |S11| (U) <S11 (deg) |S22| (U) <S22 (deg)

2100 0.78 –54 0.23 –138 2110 0.77 –55 0.24 –139 2120 0.77 –56 0.26 –142 2130 0.77 –57 0.27 –144 2140 0.76 –57 0.29 –144 2150 0.77 –58 0.29 –145 2160 0.76 –58 0.31 –147 2170 0.76 –59 0.33 –148 2180 0.76 –60 0.34 –150 2190 0.76 –60 0.35 –150 2200 0.76 –61 0.36 –152

1999 Nov 02

Page 28

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm SOT355-1

1999 Nov 02

Page 29

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

NOTES

1999 Nov 02

Page 30

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

Data sheet status

Objective specification

Preliminary specification

Product specification

Product status

Development

Qualification

Production

Definition

This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

[1]

[1] Please consult the most recently issued datasheet before initiating or completing a design.

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can

reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381

 Copyright Philips Electronics North America Corporation 1999

Date of release: 11-99

Document order number: 9397-750-06558

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1999 Nov 02