Datasheet SA2420 Datasheet (Philips)

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INTEGRATED CIRCUITS

SA2420

Low voltage RF transceiver — 2.45GHz

Product specification 1997 May 23

 

Page 2

Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45 GHz

DESCRIPTION

The SA2420 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buf fer IC designed for high-performance low-power communication systems for

2.4-2.5GHz applications. The LNA has a 2.5dB noise figure at

2.45GHz with 14dB gain and an IP3 intercept of -3dBm at the input. The gain is stabilized by on-chip compensation to vary less than ±0.2dB over the -40 to +85°C temperature range. The wide-dynamic-range receive mixer has a 10.9dB noise figure and an input IP3 of +2.8dBm at 2.45GHz. The nominal current drawn from a single 3V supply is 37mA in transmit mode and 22mA in receive mode.

FEATURES

•Low current consumption: 37mA nominal transmit mode and

22mA nominal receive mode

•Fabricated on a high volume, rugged BiCMOS technology

•High system power gain: 22.5dB (LNA + Mixer) at 2.45GHz

•TSSOP24 package

•Excellent gain stability versus temperature and supply voltage

•-10dBm LO input power can be used to drive the mixer

•Operates with either full or half frequency LO

•Wide IF range: 50–500MHz

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

24-Pin Plastic Thin Shrink Small Outline Package (Surface-mount, TSSOP)

PIN CONFIGURATION

DH Package

GND

LNA IN

GND

3 4

GND

OUT Tx IF IN Tx IF

GND

LOP

LO SW

LOM

5 6 7

9 10 11 12

Rx IF OUT Rx IF

Figure 1. Pin Configuration

APPLICATIONS

•2.45GHz WLAN front-end (802.11, ISM)

-40 to +85°C

SA2420DH SOT355-1

V LNA OUT

GND

ATTEN SW

GND

20 19

RF IN/OUT GND

Tx/Rx SW

GND

15 14

V CHIP EN

SR00164

BLOCK DIAGRAM

24 23 22 21 20

GND GND

LNA OUT

LNA

GND

ATTENUATOR

ATTEN

GND

RF IN/

OUT GND

GND

Tx/Rx

SW GND

19 18 17 16 15

PRE-DRIVER

BPF

RX TX

43215

GND

Rx IF OUT

761098

Tx IFINTx IF

Figure 2. SA2420 Block Diagram

BUFFER

CHIP

14 13

BPF

FREQ.

DBLER

1211

LOGND LOP SW

LOM

X2X1

SR00165

1997 May 23 853–1984 18069

Page 3

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA2420Low voltage RF transceiver — 2.45 GHz

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

JMAX

MAX

STG

NOTE:

1. Transients exceeding these conditions may damage the product.

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratings may impact product reliability θ

3. IC is protected for ESD voltages for 2000V , excepts pins 10 and 12, which are protected up to 500V.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

Supply voltage -0.3 to +6 V Voltage applied to any pin -0.3 to (VCC + 0.3) V Power dissipation, TA = 25°C (still air)

24-Pin Plastic TSSOP

555

mW Maximum operating junction temperature 150 °C Maximum power (RF/IF/LO pins) +20 dBm Storage temperature range –65 to +150 °C

: 24-Pin TSSOP = 117°C/W

Supply voltage 2.7 to 5.5 V Operating ambient temperature range -40 to +85 °C Operating junction temperature -40 to +105 °C

DC ELECTRICAL CHARACTERISTICS

VCC = +3V, TA = 25°C; unless otherwise stated.

CCTX

CCRX

CC OFF

LNA-IN

LNA-OUT

LO 2.1 GHz

LO 1.05 GHz

TX IF

TX IFB

Supply current, Transmit LO mode = Hi 25 37 45 mA Supply current, Receive LO mode = Hi 15 22 28 mA

Power down mode (Tx/Rx SW = Low) LNA input voltage Receive mode 0.855 V

LNA output bias current Receive mode 4.0 mA LO buffer DC input voltage LO mode = Hi 2.1 V LO buffer DC input voltage LO mode = Low 2.1 V Tx Mixer input voltage Transmit mode 1.7 V Tx Mixer input voltage Transmit mode 1.7 V

LO mode = Hi,

LNA gain = Hi

LIMITS

MIN -4σ TYP +4σ MAX

0 10 µA

1997 May 23

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA2420Low voltage RF transceiver — 2.45 GHz

AC ELECTRICAL CHARACTERISTICS

VCC = +3V, TA = 25°C; LOIN = -10dBm @ 2.1GHz; fRF = 2.45GHz; unless otherwise stated.

LIMITS

MIN -4σ TYP +4σ MAX

Low Noise Amplifier (In = Pin 2; Out = 23)

∆S21/∆T Gain temperature sensitivity LNA gain = Hi -0.002 dB/°C

∆S21/∆VCCGain VCC drift LNA gain = Hi 0.3 dB/V

S S S

ISO Isolation: LO1 to LNA

-1dB

IP3 Amplifier input third order intercept

NF Amplifier noise figure (50Ω) LNA gain = Hi 2.3 2.5 2.7 dB

LNA High Overload Mode

∆S21/∆T Gain temperature sensitivity LNA gain = Low -0.01 dB/°C

∆S21/∆VCCGain VCC drift LNA gain = Low 0.3 dB/V

S S S

ISO Isolation: LO1 to LNA

-1dB

IP3 Amplifier input third order intercept

NF Amplifier noise figure (50Ω) LNA gain = Low 17 dB

Rx Mixer (RF = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, PLO = -10dBm)

∆GC/∆T Gain temperature drift -0.016 dB/°C

∆GC/∆VCCGain VCC drift 0.34 dB/V

11–RF

-1dB

IP3 Input third order intercept f1 - f2 = 1MHz 1.7 2.8 3.9 dBm

Amplifier gain LNA gain = Hi 12.7 14.0 15.3 dB

Amplifier reverse isolation LNA gain = Hi -22 dB

Amplifier input match

Amplifier output match

LNA gain = Hi -8 dB LNA gain = Hi -8 dB

LO mode = Hi,

LNA gain = Hi

-45 dB

Amplifier input 1dB gain compression LNA gain = Hi -15 dBm

f1 - f2 = 1MHz,

LNA gain = Hi

Amplifier gain LNA gain = Low –14.0 -13.3 –12.0 dB

Amplifier reverse isolation LNA gain = Low -16 dB

Amplifier input match

Amplifier output match

LNA gain = Low -8 dB LNA gain = Low -8 dB

LO mode = Hi,

LNA gain = Low

-3 dBm

-45 dB

Amplifier input 1dB gain compression LNA gain = Low +6 dBm

f1 - f2 = 1MHz,

LNA gain = Low

Power conversion gain into 50Ω : matched to 50 using external balun

circuitry.

Input match at RF (2.45GHz) SSB noise figure (2.45GHz) (50Ω) 10.2 10.9 11.6 dB

fS = 2.45GHz,

= 2.1GHz,

= 350MHz

7.9 8.5 9.1 dB

17 dBm

-15 dB

Mixer input 1dB gain compression –11.4 -10.3 –9.2 dBm

RF frequency range IF frequency range

2.4 2.45 2.5 GHz

300 350 400 MHz

1997 May 23

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA2420Low voltage RF transceiver — 2.45 GHz

AC ELECTRICAL CHARACTERISTICS (continued)

LIMITS

MIN -4σ TYP +4σ MAX

Rx Mixer Spurious Components (PIN = P

P P

RF-IF LO-IF

RF feedthrough to IF CL = 2pF per side -35 dBc LO feedthrough to IF CL = 2pF per side -35 dBc

Tx Mixer (RF = Pin 19, IF = Pins 7 and 8, LO = Pin 10 or 12, PLO = -10dBm)

Power conversion gain: RL = 50Ω

= 50Ω

∆GC/∆T Gain temperature drift -0.032 dB/°C

∆GC/∆VCCGain voltage drift 0.4 dB/V

11–RF

-1dB

Output match at RF (2.45GHz) SSB noise figure (2.45GHz) (50Ω) 13.2 dB

Output 1dB gain compression 1.5 2.9 4.3 dBm

IP3 Output third order intercept f1 - f2 = 1MHz 10.1 +11.5 12.9 dBm

RF frequency range IF frequency range

Tx Mixer Spurious Components (P

IF-RF

LO-RF

2LO-RF

IMAGE-RF

IF feedthrough to RF -29 dBc LO feedthrough to RF -20 dBc 2*LO feedthrough to RF -25 dBc Image feedthrough to RF -0 dBc

OUT

LO Buffer: Full and Half Frequency inputs

11-LO1

11-LO2

LO2G

LO1G

Switching

Rx-Tx

Tx-Rx

POWER UP

PWR DWN

LO drive level (see figure 16) -10 -7 5 dBm

Mixer input match (LO = 2.1GHz) LO mode = Hi -10 dB Mixer input match (LO = 1.05GHz) LO mode = Low -10 dB LO2G frequency range LO1G frequency range

3 3

Receive-to-transmit switching time 1 µs Transmit-to-Receive switching time 1 µ s Chip enable time 1 µs Chip disable time 1 µs

NOTES:

1. With simple external matching

2. With 50pF coupling capacitors on all RF and IF parts

3. This part has been optimized for the frequency range at 2.4–2.5 GHz. Operation outside this frequency range may yield performance other than specified in this datasheet.

= P

-1dB

)

fS = 2.45GHz,

= 2.1GHz,

= 350MHz

15.0 17 19.9 dB

-10 dB

2.4 2.45 2.5 GHz

300 350 400 MHz

)

LO mode = Hi 1.9 2.1 2.3 GHz

LO mode = Low 0.85 1.05 1.25 GHz

1997 May 23

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Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45 GHz

Table 1. Truth Table

Chip-En TxRx-SW LNA-SW LO-SW Mode LNA Gain LO Freq. (Typ)

0 X X X Sleep N/S N/S 1 0 1 1 Receive +14dB 2.1GHz 1 0 0 1 Receive -8dB 2.1GHz 1 0 1 0 Receive +14dB 1.05GHz 1 0 0 0 Receive -8dB 1.05GHz 1 1 X 1 Transmit N/S 2.1GHz 1 1 X 0 Transmit N/S 1.05GHz

FUNCTIONAL DESCRIPTION

The SA2420 is a 2.45GHz transceiver front-end available in the TSSOP-24 package. This integrated circuit (IC) consists of a low noise amplifier (LNA) and up- and down-converters. The injection of the local oscillator (LO) signal has two options: 1) direct injection of the LO signal at approximately 2GHz, or 2) injection of an LO signal at approximately 1GHz through an on-chip doubler. The SA2420 functions with a supply voltage range of 3 – 5 V (nominally). There is an enable/disable switch available to power up/down the entire chip in 1µs, typically. This transceiver has several unique features.

The LNA has two operating modes: 1) high gain mode with a gain = +14dB; and 2) low gain mode with a gain <-10dB. The switch for this option is internal and is controlled externally by high and low logic to the pin. When the LNA is switched into the attenuation mode, active matching circuitry (on-chip) is switched in (reducing the number of off-chip components required). To reduce power consumption when the chip is transmitting, the LNA is automatically switched into a “sleep” mode (internally) without the use of external circuitry.

The up and down frequency converters are single-ended at the RF port of the mixers. The up and down converters share the same

(RF) pin and use an internal switch for transmitting (up-converting) or receiving (down-converting) modes. The switch is controlled externally by high and low logic states. The RF port is matched to 50Ω and has an input IP3 of +2.8dBm (mixer only). The down-convert mixer is buffered and has open collectors at the pins to allow for matching to common SAW filters. The up-convert mixer has differential inputs (IF port) and single-ended output (RF port), with an input pin to output pin gain of 17dB. The output of the up-converter is designed for a power level = +3dBm (P mixers are fed by the two LO options.

The available LO options are: direct injection (2.1GHz at the pin) or through an on-chip doubler . The doubler has a simple LC bandpass filter (internal) at its output which passes the second harmonic to the mixers. Through an internal switch (controlled externally), either LO can be used depending on the designer’s application. If an application requires the use of a 1.05GHz VCO, then the doubler option would be used to double the frequency (2 × 1.05GHz =

2.1GHz) before being injected into the mixers. For a 2.1GHz VCO, the direct option would be used. With this option, the signal passes through an on-chip buffer and is then injected into the mixers.

-1dB

). The

1997 May 23

Page 7

Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45 GHz

Vcc = 3V

CURRENT (MA)

–50 0 50

TEMPERATURE (DEGREES)

Figure 3. Rx & Tx Currents VS Temperature

T = 25°C

100

SR01458

3.0 Vcc = 3V

2.8

2.6

2.4

NOISE FIGURE (dB)

2.2

2.0 –50 0 50

TEMPERATURE (DEGREES C)

Figure 5. LNA Gain & 50 NF VS Temperature

3.0

Vcc = 3V

2.8

GAIN

14.8

14.4

14.0

13.6

13.2

12.8

100

SR01460

14.8

14.4

GAIN (dB)

CURRENT (MA)

23 5

VOLTS (V)

Figure 4. Rx & Tx Currents VS Voltage Supply

SR01459

2.6

2.4

NOISE FIGURE (dB)

2.2

2.0

2.400 2.425 2.450 FREQUENCY (GHz)

Figure 6. LNA Gain & 50 NF VS Frequency

2.475

2.500

GAIN (dB)

14.0

13.6

13.2

12.8

SR01461

1997 May 23

Page 8

Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45 GHz

3.0 T = 25°C

2.8

2.6

2.4

NOISE FIGURE (dB)

2.2

2.0

23 4

VOLTS (V)

Figure 7. LNA Gain & 50 NF VS Supply Voltage

–12.0

T = 25°C

Vcc = 3V

–12.4

–12.8

–13.2

S21 LOSS (dB)

LOSS

S12

GAIN

SR01462

–23.0

–23.8

–24.6

–25.4

GAIN (dB)

S12(dB)

T = 25°C

–5

P–1dB

IP3

–10

–15

INPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)

–20

23 4

VOLTS (V)

SR01464

Figure 9. LNA Input IP3 and P–1dB VS Supply Voltage

–5

P–1dB

IP3

–10

–13.6

–14.0

2.400 2.425 2.450 FREQUENCY (GHz)

2.475

Figure 8. LNA Loss Mode & S12 VS Frequency

2.500

–26.2

–27.0

SR01463

–15

Input IP3 and 1 dB Gain compression (dBm)

–20

2.400 2.425 2.450 FREQUENCY (GHz)

Vcc = 3VT = 25°C

2.475

Figure 10. LNA Input IP3 and P–1dB VS Frequency

2.500

SR01465

1997 May 23

Page 9

Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45 GHz

P–1dB

IP3

LNA LOSS MDOE INPUT IP3 AND P–1dB (dBm)

23 4

VOLTS (V)

T = 25°C

SR01466

Figure 11. LNA Loss Mode Input IP3 and P–1dB VS Voltage

11.8 VCC = 3V

11.4

11.0

9.8

9.4

9.0

11.5

11.3

11.1

10.9

SSB NOISE FIGURE (dB)

10.7

10.5

Figure 13. Rx Mixer Conv. Gain & SSB NF VS Supply Voltage

CONVERSION GAIN (dB)

T = 25°C

23 4

VOLT (V)

T = 25°C

GAIN

10.0

9.6 CONVERSION GAIN (dB)

9.2

8.8

8.4

8.0

SR01468

10.6

10.2

SSB NOISE FIGURE (dB)

9.8

9.4

9.0 –50 0

GAIN

TEMPERATURE (DEGREES C)

100

SR01467

8.6

8.2

7.8

7.4

7.0

Figure 12. Rx Mixer Conv. Gain & SSB NF VS Temperature

P–1dB

IP3

–5

INPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)

–10

23 4

VOLTS (V)

SR01469

Figure 14. Rx Mixer Input IP3 and P–1dB VS Supply Voltage

1997 May 23

Page 10

Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45 GHz

CC =

T = 25°C

–5

INPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)

–10

2.400 2.425 2.450 FREQUENCY (GHz)

P–1dB

IP3

2.475

2.500

SR01470

Figure 15. Rx Mixer Output IP3 and P–1dB VS Frequency

GAIN

POWER

CURRENT (MA)

VCC = 3V

–50 0 50

TEMPERATURE (DEGREES C)

100

Figure 17. Tx Mx conv . Gain and Output Pwr VS Temp.

–6

–12

IMAGE

SATURATED OUTPUT POWER (dB)

–6

SR01472

FULL (LO = 2.1 GHZ)

DOUBLER (LO = 1.05 GHZ

–5

Rx MIXER CONVERSION GAIN (dB)

–10

–30 –24 –18

LO POWER (dBM)

–12

–6

Figure 16. Rx Mixer Conversion Gain VS LO Power

SR01471

–18

–24

LO AND IMAGE SUPPRESSION (dbc)

–30

–30 –20

LO POWER (dBM)

–10

Figure 18. Tx Mixer LO and Image Suppression

SR01473

1997 May 23

Page 11

Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45 GHz

13.8

13.6 T = 25°C

13.4

13.2

SSB NOISE FIGURE (dB)

13.0

12.8

VOLTS (V)

GAIN

Figure 19. Tx Mixer Gain & NF VS Supply Voltage

T = 25°C

P–1dB

IP3

21.0

CONVERSION GAIN (dB)

20.4

19.8

19.2

18.6

18.0

SR01474

VCC = 3V

P–1dB

IP3

OUTPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)

–2

–50 0

TEMPERATURE (DEGREES C)

100

SR01479

Figure 21. Tx Mixer Output IP3 and P–1dB VS Temperature

= 3V

T = 25°C

P–1dB

IP3

OUTPUT P–1dB AND IP3 (dBM)

VOLTS (V)

Figure 20. Tx Mixer Output P–1dB and IP3 Vs Voltage

SR01475

OUTPUT IP3 AND 1 DB GAIN COMPRESSION (dBm)

2.400 2.425

2.450

FREQUENCY (GHz)

2.475

2.500

SR01480

Figure 22. Tx Mixer Output IP3 and P–1dB VS Frequency

1997 May 23

Page 12

Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45 GHz

GND

145

RF I/O

C14

C13

260

33pF

1.5pF

GND

SW4

Tx/Rx SW

GND

C11

SW3

33pF

C12

100nF

SW2

ENABLE

LNA OUT

C18

(not used)

GND

SW5

ATTEN SW

100nH

C15

1.5pF

C17

10uF

C16

100nF

200

LNA OUT

SA2420

GND

LNA IN

GND

Rx IF OUT

Tx IF IN

GND

LOP

LO SW

LOM

RF TRANSCEIVER

2.45 GHz LOW VOLTAGE

1.5pF

300

100pF

TxIN

33nH

(352 MHz)

10pF

1.5pF C3

10pF

47nH

LNA IN

27nH

RxOUT

(352 MHz)

3.3pF

10pF

SW1

33pF



GND

C10

33pF

THICK OF NATURAL FR–4 SUBSTRATE

: 10 MILS WIDE, XXX MILS LONG ON 31 MILS XXX

SR01481

Figure 23.

1997 May 23

Page 13

Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45 GHz

1997 May 23

SR01485

Figure 24. SA2420 RF Transciever

Page 14

Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45GHz

TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm SOT355-1

1997 May 23

Page 15

Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45GHz

DEFINITIONS

Data Sheet Identification Product Status Definition

Objective Specification

Preliminary Specification

Product Specification

Formative or in Design

Preproduction Product

Full Production

Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

LIFE SUPPORT APPLICA TIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected

to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.

Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381

This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.

 

1997 May 23