Datasheet SA1920 Datasheet (Philips)

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Page 1

INTEGRATED CIRCUITS

SA1920

Dual-band RF front-end

Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbook

 

1999 Mar 02

Page 2

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

DESCRIPTION

The SA1920 is an integrated dual-band RF front-end that operates at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and GSM) frequencies, and is designed in a 13 GHz f

BiCMOS

process—QUBiC1. The low-band is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure at 881 MHz with 17.5 dB of gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 10 dB noise figure at 881 MHz with 9.5 dB of gain and an IIP3 of +5 dBm.

The high-band contains a receiver front-end, doubler and a high frequency transmit mixer intended for closed loop transmitters. One advantage of the high-band architecture is an image-rejection mixer with over 30 dB of image rejection; thus, eliminating external filter cost while saving board space. The system noise figure is 4.2 dB at 1960 MHz with a power gain of 23.5 dB and an IIP3 of –12.5 dB.

PIN CONFIGURATION

Rx ON

LOW BAND LO A

HIGH BAND LO B

21222324

Tx ON

GND

X2 ON

N/C

28 29

30 31

32 33 34 35

37 38 39 40 41 42 43

HIGH BAND IMAGE SET I

HIGH BAND LO INPUT

LOW BAND LO INPUT

HIGH BAND IMAGE SET Q

FEATURES

•Low current consumption

•Outstanding low- and high-band noise figure

•Excellent gain stability versus temperature and supply

•Image reject high-band mixer with over 30 dB of rejection

•Increased low-band LNA gain compression during analog

transmission

•LO input and output buffers

•Frequency doubler

•On chip logic for network selection and power down

•Very small outline package

APPLICATIONS

•800 to 1000 MHz analog and digital receivers

•1800 to 2000 MHz digital receivers

•Portable radios

•Digital mobile communications equipment

HIGH BAND LO A

GND

LOW BAND IF B

LOW BAND IF A

HIGH BAND IF B

HIGH BAND IF A

SYN ON

HI/LO

181920

44 45 46 47 48

151617 1314

N/C

GND

Tx B

Tx A GND

GND

MIX IN

GND

Tx IF B

Tx IF A

N/C

STRONG SIGNAL

GND

LOW BAND LNA IN

HIGH BAND LNA IN

LOW BAND LNA OUT

GND

N/C

SR01435

Figure 1. Pin Configuration

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

SA1920 LQFP48 Plastic low profile quad flat package; 48 leads; body 7x7x1.4 mm SOT313-2

1999 Mar 02 853–2057 20918

PACKAGE

Page 3

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

PIN DESCRIPTIONS

PIN NO.

1 N/C No Connection 2 Tx IF A Transmit IF A 3 Tx IF B Transmit IF B 4 GND Ground 5 MIX IN Low Band Mixer Input 6 GND Ground 7 V 8 GND Ground

9 Tx A Transmit Signal A 10 Tx B Transmit Signal B 11 GND Ground 12 N/C No Connection 13 HI/LO High Band/Low Band Control 14 SYN ON LO Buffer Power Control 15 HIGH BAND IF A High Band IF A 16 HIGH BAND IF B High Band IF B 17 LOW BAND IF A Low Band IF A 18 LOW BAND IF B Low Band IF B 19 GND Ground 20 HIGH BAND LO A High Band LO Output 21 HIGH BAND LO B High Band LO Output 22 LOW BAND LO A Low Band LO Output 23 LOW BAND LO B Low Band LO Output 24 Rx ON LNA/Mixer Power Control 25 V 26 Tx ON Tx Mixer/Driver Power 27 V 28 HIGH BAND IMAGE SET I High Band Image Set I 29 GND Ground 30 HIGH BAND LO INPUT High Band LO Connection 31 LOW BAND LO INPUT Low Band LO Connection 32 GND Ground 33 HIGH BAND IMAGE SET Q High Band Image Set Q 34 GND Ground 35 X2 ON Freq. Doubler Power Control 36 N/C No Connection 37 N/C No Connection 38 STRONG SIGNAL Strong Signal Detection 39 GND Ground 40 V 41 GND Ground 42 HIGH BAND LNA IN High Band LNA Input 43 LOW BAND LNA IN Low Band LNA Input 44 GND Ground 45 LOW BAND LNA OUT Low Band LNA Output 46 GND Ground 47 GND Ground 48 N/C No Connection

PIN NAME DESCRIPTION

1999 Mar 02

Page 4

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

HI/LO

SYN ON

HIGH BAND IF A

HIGH BAND IF B

LOW BAND IF A

LOW BAND IF B

GND

HIGH BAND LO A

HIGH BAND LO B

LOW BAND LO A

LOW BAND LO B

N/C

GND

Tx B

Tx A

REJECT

IMAGE

MIXER

GND

MIX IN

GND

Tx IF B

N/C

Tx IF A

N/C

GND

LNA OUT

GND

LOW BAND LNA IN

HIGH BAND LNA IN

GND

STRONG SIGNAL

Rx ON

N/C

Tx ON

GND

HIGH BAND IMAGE SET I

HIGH BAND LO INPUT

GND

LOW BAND LO INPUT

GND

HIGH BAND IMAGE SET Q

X2 ON

N/C

SR01436

Figure 2. Block Diagram

1999 Mar 02

Page 5

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

T able 1. POWER DOWN CONTROL

For Applications Not Using a Frequency Doubler, each state is defined as follows:

DOUBLER

Control State (Hi/Lo, Syn On, Rx On, Tx On, Strong Signal, X2 ON)

x000xx Sleep Off Off Off Off Off Off Off Off Off 010000 Low-Band LO Buffer on Off Off On Off Off Off Off Off Off 011000 Low-Band Receive Normal Off Off On Off On Off On Off Off 011010 Low-Band receive Strong Signal Off Off On Off Off Off On Off Off 011100 Low-Band Transmit (Analog only) Off Off On Off On

010100 N/A Off Off On Off Off Off Off Off On 110000 High-Band LO Buffer On Off On Off Off Off Off Off Off Off 111000 High-Band Receive Normal Off On Off On Off On Off Off Off 111010 High-Band Receive Strong Signal Off On Off Off Off On Off Off Off 110100 N/A Off On Off Off Off Off Off On Off

LO BUFFER LNA MIXER

High

Band

Low

Band

High

Band

Low

Band

High Bias

High

Band

Off On Off On

Low

Band

TX MIXER

DRIVER

High

Band

Low

Band

For Applications Using a Frequency Doubler, each state is defined as follows:

DOUBLER

Control State (Hi/Lo, Syn On, Rx On, Tx On, Strong Signal, X2 ON)

x000xx Sleep Off Off Off Off Off Off Off Off Off 010000 Transmit (Low and High Band) Off Off On Off Off Off Off Off Off 011000 Low-Band Receive Normal Off Off On Off On Off On Off Off 011010 Low-Band Receive Strong Signal Off Off On Off Off Off On Off Off

011110 Low-Band Transmit (Analog only) Off Off On Off On

010100 Low-Band Transmit (GSM) Off Off On Off Off Off Off Off On 010001 Transmit (Low and High Band) On Off On Off Off Off Off Off Off 011001 Low-Band Receive Normal On Off On Off On Off On Off Off 011011 Low-Band Receive Strong Signal On Off On Off Off Off On Off Off

011111 Low-Band Transmit(Analog only) On Off On Off On

111001 High-Band Receive Normal On On On On Off On Off Off Off

111011 High-Band Receive Strong Signal On On On Off Off On Off Off Off 110101 High-Band Transmit (GSM) On On On Off Off Off Off On Off

LO BUFFER LNA MIXER

High

Band

Low

Band

High

Band

Low

Band

High Bias

High

Band

Off On Off Off

Low

Band

TX MIXER

DRIVER

High

Band

Low

Band

NOTE:

“0” is low logic state; “1” is high logic state.

1999 Mar 02

Page 6

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

OPERATION

The low-band contains both an LNA and mixer that is designed to operate in the 800 to 1000 MHz frequency range. The high-band contains an LNA and image-rejection mixer that is designed to operate in the 1800 to 2000 MHz frequency range with over 30 dB of rejection over an intermediate frequency (IF) range from 100 to 125 MHz.

Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in the I and Q IF channels that phase shift the IF by 45 and 135, respectively. The two phase shifted IFs are recombined and buffered to produce the IF output signal.

The LO section consists of an internal all-pass type phase shifter to provider quadrature LO signals to the receive mixers. The all-pass filters outputs are buffered before being fed to the receive mixers. The transmit mixer section consists of a low-noise amplifier, and a down-convert mixer. In the transmit mode, an internal LO buf fer is used to drive the transmit IF down-convert mixer.

Low-Band Receive Section

The circuit contains a LNA followed by a wide-band mixer. In a typical application circuit, the LNA output uses an external pull-up inductor to VCC and is AC coupled. The mixer IF outputs are differential. A typical application will load the output buffer with an inductor across the IF outputs, a pull-up inductor to V coupled capacitor to the matching network.

and an AC

Low-Band Receive Section (Analog Transmit Mode)

The bias current of the low-band LNA will increase during analog transmission, which increases its gain compression point and makes the receiver less sensitive to PA leakage power for an AMPS application.

High-Band Receive Section

The circuit contains an LNA followed by two high dynamic range mixers. These are Gilbert cell mixers; the internal architecture is fully differential. The LO is shifted in phase by 45 and 135 and mixes the amplified RF signal to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45 and 135, respectively , amplified and recombined internally to realize the image rejection.

The IF output is differential and of the open-collector type. A typical application will load the output buffer with an inductor across the IF outputs, a pull-up inductor to V the matching network.

and an AC coupled capacitor to

Control Logic Section

Pins HI/LO, SYN ON, Rx On, Tx On, Strong Signal, X2 (doubler) On, control the logic functions. The HI/LO mode selects between low-band and high-band operation. The SYN ON mode enables the LO buffers independent of the other circuitry . When SYN ON is high, all internal buffers in the LO path of the circuit are turned on, thus minimizing LO pulling when the remainder of the receive or transmit chain is powered-up.

The Rx ON mode enables the LO buffers when the device is in the low-band receive normal, receive strong signal and transmit modes; the Rx ON mode enables the LO buffers, also, when the device is in the high-band receive normal, and receive strong signal modes.

The Tx ON mode enables the transmit mixer. The strong signal mode, when disabled, allows the low- and high-band LNAs to function normally; and when the strong signal mode is enabled, it turns-off the low- and high-band LNAs. This is needed when the input signal is large and needs to be attenuated.

The doubler (X2) on mode enables the doubler. When the doubler is on, the input signal from the LO buffers is doubled in frequency . The signal can be used to drive the image-rejection mixer and the output LO high-band ports. When the doubler mode is on, all other control logic (see table 1) functions the same.

Local Oscillator (LO) Section

The LO input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. A synthesizer-on (SYN ON) mode is used to power-up all LO input buffers, thus minimizing the pulling effect on the external VCO when entering receive or transmit mode.

Transmit Mixer Section

The transmit mixer is used for down-conversion to the transmit IF. Its inputs are coupled to the transmit RF which is down-converted to a modulated transmit IF frequency , and phase-locked with the baseband modulation.

The IF outputs are HIGH impedance (open-collector type). A typical application will load the output buffer with an inductor across the IF outputs, a pull-up inductor to V matching network.

and AC coupled capacitors to the

1999 Mar 02

Page 7

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

ABSOLUTE MAXIMUM RATINGS

QUANTITY SYMBOL VALUE UNIT

Input supply voltage at pins: 7, 25, 27, 40 V Power dissipation P Input power at all ports P Operating temperature range (pin temp) T Storage temperature range T

D IN O

srg

DC ELECTRICAL CHARACTERISTICS

Unless otherwise specified, all Input/Output ports are single-ended.

DC PARAMETERS

= +3.75 V, T

DC Supply voltage V Current Consumption: Sleep Mode X000XX I Low Band Receive Normal 011000 I Low Band Receive Strong 011010 I Low Band Transmit (Analog) 011110 I Low Band Transmit (GSM) 010100 I High Band Receive Normal 111000 I High Band Receive Strong 111010 I High Band Transmit (GSM) 110100 I Frequency Doubler 8.8 mA Logic Low Input 0 0.5 V Logic High Input 1.9 4.0 V

= –40 to +85°C unless otherwise noted

QUANTITY

CONDITION SYMBOL MIN. TYP. MAX. UNIT

CC CC CC CC CC CC CC CC CC

3.6 3.75 3.9 V

10.1 12.5 15.2 mA

35.0 42.0 53.0 mA

4.75 V 150 mW +20 dBm

–40 to+85 °C

–65 to +125 °C

1 100

A

8.8 mA

18.0 mA

16.0 mA

38.0 mA

21.5 mA

1999 Mar 02

Page 8

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

AC ELECTRICAL CHARACTERISTICS Low-Band, Dual Mode of Operation

VCC = +3.75 V, FreqRF = 881 MHz, FreqLO = 991.52 MHz, Pin = –3 dBm, TA = +25C; unless otherwise stated

PARAMETERS

System

RF Input Frequency Range 869 881 960 MHz IF Frequency 110.52 MHz LO Frequency 991.52 MHz Cascaded Power Gain; includes 3dB filter loss 22.5 24 25.5 dB Power Gain Reduction (Strong Signal Mode—LNA Off) 29 35 41 dB Cascaded Noise Figure; includes 3dB filter loss 2.6 dB

LNA

LNA Gain 17 17.5 18 dB LNA IIP3 –6 –5 –4 dBm LNA Noise Figure 1.6 1.7 1.8 dB

Mixer

Mixer Gain 9 9.5 10 dB Mixer IIP3 4 5 6 dBm Mixer Noise Figure 9 10 11 dB

Other

Input Impedance, RF Port 50 Return Loss at LNA Inputs and Output –10 dB 1 Return Loss at Mixer Input and Outputs –10 dB 1 LO leakage at RF Port –42 dBm LO Input Power –5 –3 –1 dBm Turn ON/OFF Time 100

Min

–3

TYP

+3

Max UNITS NOTES

msec

Low-Band LO Buffer

PARAMETERS Min

LO Frequency 991.52 MHz Differential Output Power –7 dBm Differential Output Impedance 100 Harmonic Content –20 dBc Input Power –5 –3 –1 dBm Input Impedance 50 Turn On/Off T ime 30

1999 Mar 02

–3

TYP.

+3

Max UNITS NOTES

msec

Page 9

Philips Semiconductors Product specification

50 dBm IN Referred to RF In ut Port

SA1920Dual-band RF front-end

AC ELECTRICAL CHARACTERISTICS High-Band, Single Mode of Operation

LNA and Image Reject Mixer

VCC = +3.75 V, FreqRF = 1960 MHz, FreqLO = 2070.52 MHz, Pin = –3 dBm, TA = +25C; unless otherwise stated

PARAMETERS

RF Input Frequency Range 1805 1990 MHz IF Frequency 100 110.52 125 MHz LO Frequency 1905 2115 MHz Power Gain 21 23.5 25 dB Power Gain Reduction (Strong Signal Mode—LNA Off) 40 47 54 dB Noise Figure 4.0 4.2 4.4 dB Input Impedance, RF Port 50 Return Loss at Inputs –10 dB 1 LO leakage at RF Port –48 dBm 1 dB RF Input Compression Point –24 dBm IP3 (3RD Order Intermodulation Product)

Referred to the RF Input Port (2 x LO) – (2 x RF) Spur Performance

– Measure at LO = 2040 MHz and RF = 1985 MHz

(3 x LO) – (3 x RF) Spur Performance. –50 dBm IN Referred to RF Input Port. Measure at LO = 2040 MHz and RF = 2003 MHz.

Image rejection, fRX+2fIF or f Referred to the RF Input Port

LO Input Power –5 –3 –1 dBm Turn ON/OFF Time 30

–2f

MIN

30 35 dB

–3

–15 –12.5 –10 dBm

TYP.

–65 dBc

–62.5 dBc

+3

MAX UNITS NOTES

msec

High-Band LO Buffer

LO Frequency Range 1905 2115 MHz Differential Output Power –9 dBm Differential Output Impedance 100 Harmonic Content –20 dBc Input Power –5 –3 –1 dBm

Input Impedance 50 Turn On/Off T ime 30

1999 Mar 02

PARAMETERS MIN

–3

TYP.

+3

MAX UNITS NOTES

msec

Page 10

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Frequency Doubler

PARAMETERS MIN

Output Frequency Range 1905 2115 MHz Output Power –9 dBm Differential Output Impedance 100 Harmonic Content (3F, 4F , etc.) –20 dBc Subharmonic Content (Fi) –20 dBc Non-Harmonic Content 80 dBc Turn On/Off T ime 30 Phase Noise Degradation, ∆ f = 30kHz 6 dB

–3

Transmit Mixer

PARAMETERS MIN

TX Mixer Input Frequency 824 1910 MHz TX RF Input Impedance, Balanced 200 TX Mixer Output Frequency 70 200 MHz TX IF Load Impedance 1000 Maximum TX IF Load Capacitance 2 pF Conversion Power Gain 15 16 17 dB 2 1 dB Input Compression Point –17 dBm IIP2 20 dBm IIP3 –9 –7 –5 dBm Noise Figure (double sideband) 7.5 dB Reverse Isolation T Isolation LOIN–T

NOTES:

1. External matching network is required.

2. From 200W input to a 1kW output.

XIN

–LO

40 dB 40 dB

–3

TYP.

+3

MAX UNITS NOTES

msec

MAX UNITS NOTES

1999 Mar 02

Page 11

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

R15

J24–4

AP36

3.92K

Maletxsma

4763–000–00

I1695

SUM PORT

LRPS–2–11

PORT 2

PORT 1

AT5

PAT–3

R21

51.1

10 pf

C25

C26

J22–5

J21–2

J100–4

J100–2

J100–3

J100–5

J23–4

AP39

AP11

DPS1LF

R14

PAT–3

10 pf

R20

51.1

3.92K

R12

AT6

DPS1HF

DPS1LS

DPS1HS

C32

1 uH BA

C12

C16

0.1 uf

1000 pf

100 pf

DP19

C13

1000 pf

DO NOT ASSEMBLE 1

R28

J1–3

AP43

3.92K

L12

3.3 pf

DPS1

C38

1000 pf

C37

100 pf

4.7 nH

R27

J28–2

J29–2

J28–3

3.92K

AP16

R31

3.92K

C22

AT7

AP47

332

R29

C30

PAT–3

R22

33 pf

1.5 pf

Maleltxsma

4763–000–00

I1696

51.1

8.2 nH B

R30

J26–3

AP16

3.92K

Maleltxsma

4763–000–00

I1693

AT8

PAT–3

R19

51.1

8.2 nH

C21

33 pf

C29

2.2 pf

DPS1

C33

0.1 uf

1 uH BA

C14

1000 pf

C17

100 pf

DP31

J25–2

DP23

J26–2

AP14

R16

AP45

DUT–48

N/C

DUT–1

C23

3.92K

J1–4

330 nH

8.2 pf

DUT–45

DUT–46

LBLOUT

RxMxGND

SA1920

TXIFA

TXIFB

DUT–2

DUT–3

coil

C24

AT9

DUT–47

GND

10 pf

R32

PAT–10

Maleltxsma

DUT–44

DUT–41

GND

DUT–4

DUT–6

562

5.6 pf

I1688

4763–000–00

330 nH

DUT–43

LBLIN

LBMIN

DUT–5

1000 pf

DPS1

DUT–42

HBLIN

GND

VCC

DUT–7

DUT–8

DUT–11

C15

100 pf

C10

1000 pf

1 uH

C31

0.1 uf

R13

AP9

J2–4

N/C

DUT–12

TXA

DUT–9

C18

AP10

J2–5

DUT–40

VCC

TXB

DUT–10

33 pf

C19

1.5 pf

3.92K

R17

AT10

PA T–3

13 A

DUT–39

GND

51.1 R4

I1689

4763–000–00

Maleltxsma

DUT–38

STRONG

3.92K

AP42

J6–5

DUT–37

N/C

HILO

DUT–13

DP33

J13–2

DUT–36

N/C

HBIFA

SYNON

DUT–14

DUT–15

DP34

J13–3

DUT–35

X2ON

8.2 pf

R10

AT1

PA T–10

DUT–34

GND

IMAGE

REJECT

MIXER

5.6 pf

330 nH

MaleLTXAC_SMA

4763–000–00

L10

I1929

HBIFB

DUT–16

330 nH

1.21K

DUT–33

LBBPS

C27

5.6 pf

DPS1

R26

AP46

1000 pf

3.92K

J11–2

DUT–32

DUT–31

GND

LBTNK

LBIFA

DUT–17

8.2 pf L7

5.6 pf 1

R18

AT2

PA T–10

Maleltxsma

LBIFB

DUT–18

C28

4.7 pf

330 nH

L11

330 nH

R11

4.32K

DPS1

4763–000–00

I1692

C11

DUT–30

HBTNK

1000 pf

R25

AP44

J12–4

3.92K

DUT–29

DUT–28

DUT–27

DUT–26

DUT–25

GND

R24

AT4

AT3

PAT–10

PORT 1

PORT 2

SUM PORT

LRPS–2–11

Maletxsma

4763–000–00

VCC

HBBPS

HBLOA

HBLOB

GND

DUT–19

DUT–20

DUT–21

C34

33 pf

R23

PAT–10

C20

33 pf

3.92KR73.92KR53.92K

I1691

AP41

AP40

J11–5

J15–3

C36

33 pf

AP38

TXON

LBLOA

DUT–22

C35

33 pf

3.92K

J20–3

LBLOB

DUT–23

AP12

J21–3

VCC

RXON

DUT–24

DP26

J16–2

SR01801

Figure 3. SA1920 Dual-Band Test Circuit

1999 Mar 02

Page 12

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

J19

SMA

LBLOIN

J20

SMA

C35

J16

J17

1.5 pF

SMA

HBLIN

SMA

LBLIN

C20

33 pF

C27

C24

C18

33 pF

6.8 nH

100 nF

47 pF

C34

10 nF

STRONG

N/C

STRONG

GND

VCC

GND

HBLIN

LBLIN

GND

LBLOUT

GND

N/C

NOTE: LOGIC PIN MARKED

X2 ON APPLICATION DEMO

BOARD SHOULD BE SET

TO 0 (GND) FOR CORRECT

OPERATION

N/C

X2ON

GND

QSET

HBLOIN

C31

REJECT

MIXER

GND

ISET

2.2 K

C15 10 pF

C14 10 pF

HBLOIN

LBLOIN

GND

IMAGE

VCC

TXON

5 pF

47 pFC16

VCC

5 pF

100 nFC26

RXON

LBLOB

LBLOA

HBLOB

HBLOA

GND

LBIFB

LBIFA

HBIFB

HBIFA

SYNON

HILO

RXON

C6 33 pF

220 nH

SMA

LBLOBJ7SMA

L10

C7 33 pF

C10

C11

C12

3.3 pF

C13

LBLOAJ8SMA

L11

270 nH

HBLOB

J10

SMA

HBLOA

C8 33 pF

C9 33 pF

LBMOUT

HBMOUT

J15

SMA

LBLOUT

1999 Mar 02

C30

220 nH

SR01813

3.9 pF

C29

C28

6.8 pF

150 nH

VCC

GND

C34

33 pF

C19

1 pF

620

8.2 nH

C32

SA1920

10 nF

(JEANNE)

6.8 pFC3

L6 8.2 nH

SMA

GND

LBMIN

GND

C22 47 pF

TXA

C4 33 pF

C25 100 nF

N/C

10 pFC1

180 nH

8.2 pFC2

TXIFB

TXIFA

3.9 pFC21

J18

SMA

MGND1

2KR1

TXOUT

C17

LBMIN

180 nHL2

100 nF

TXB

C5 33 pF

SMA

TXIN

GND

C23 1.5 pF

N/C

J11

HILO

J12

SYNON

Figure 4. SA1920 Dual-Band Application Circuit

Page 13

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

PERFORMANCE CHARACTERISTICS

VCC = +3.75 V, FreqRF = 1960 MHz, FreqLO = 2070.52 MHz, Pin = –5 dBm, TA = +25C; unless otherwise stated

16.0

15.0

14.0

13.0

(mA)

12.0

11.0

10.0

9.0

8.0

3.60 3.70 3.80 3.90

3.65 3.75 3.85

+85°C

+25°C –40°C

(V)

SR01613

50.0 +85°C

45.0

40.0

(mA)

35.0

30.0

25.0

3.60 3.70 3.80 3.90

3.65 3.75 3.85

+25°C

–40°C

VCC (V)

SR01614

Figure 5. Low Band Receive Normal I

30 28 26 24 22

GAIN

(dB)

18 16 14 12 10

100 105 110 115 120 125

IF FREQUENCY (MHz)

Figure 7. High Band Gain vs. IF Frequency

–10

–11

–12

IP3

(dBm)

–13

–14

–15

100 105 110 115 120 125

IF FREQUENCY (MHz)

SR01610

Figure 6. High Band Receive Normal I

REJECTION (dB)

100 105 110 115 120 125

IF FREQUENCY (MHz)

Figure 8. High Band Image Rejection vs. IF Frequency

IP2

(dBm)

100 105 110 115 120 125

IF FREQUENCY (MHz)

SR01609

1999 Mar 02

Figure 9. High Band IP3 vs. IF Frequency

SR01631

SR01611

Figure 10. High Band IP2 vs. IF Frequency

Page 14

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

6.0

5.0

4.0

3.0

2.0

1.0

NOISE FIGURE (dBm)

0.0 100 105 110 115 120 125

IF FREQUENCY (MHz)

Figure 11. High Band NF vs. IF Frequency

–2 –3 –4 –5 –6

IP3

–7

(dBm)

–8 –9

–10

–11

–12

860 880 900 920 940 960

870 890 910 930 950

–40°C

FREQUENCY (MHz)

+85°C

+25°C

SR01612

GAIN

(dB)

860 880 900 920 940 960

+25°C

870 890 910 930 950

–40°C

+85°C

FREQUENCY (MHz)

Figure 12. LB LNA Gain vs. Frequency

2.6

2.4

2.2 2

1.8

1.6

1.4

NOISE FIGURE (dB)

1.2 1

860 880 900 920 940 960

870 890 910 930 950

+85°C

+25°C

–40°C

FREQUNCY (MHz)

SR01615

Figure 13. LB LNA IP3 vs. Frequency

GAIN

(dB)

870 890 910 930 950

860 880 900 920 940 960

–40°C

+25°C +85°C

FREQUENCY (MHz)

Figure 15. LB Mixer Gain vs. Frequency

SR01616

SR01618

Figure 14. LB LNA Noise Figure vs. Frequency

8 7 6 5

IP3

(dBm)

4 3 2 1 0

860 880 900 920 940 960

–40°C

+25°C

+85°C

FREQUENCY (MHz)

Figure 16. LB Mixer IP3 vs. Frequency

SR01617

950930910890870

SR01619

1999 Mar 02

Page 15

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

15 14 13 12

9 8

NOISE FIGURE (dB)

7 6 5

870 890 910 930 950

860 880 900 920 940 960

+25°C

–40°C

FREQUENCY (MHz)

+85°C

Figure 17. LB Mixer Noise Figure vs. Frequency

–6

–8 –10 –12

IP3

(dBm)

–14 –16 –18 –20

1800 1900 2000

1880186018401820 1920 1940 1960 1980 FREQUENCY (MHz)

+85°C +25°C –40°C

SR01620

32 30 28 26

GAIN

(dB)

24 22 20 18

1800 1900 2000

–40°C

+25°C

+85°C

FREQUENCY (MHz)

Figure 18. HB Gain vs. Frequency

6.5 6

5.5 5

4.5 4

3.5

NOISE FIGURE (dB)

2.5 2

1800 1900 2000

+85°C

+25°C

–40°C

1880186018401820 1920 1940 1960 1980 FREQUENCY (MHz)

19801960194019201880186018401820

SR01621

SR01622

Figure 19. HB IP3 vs. Frequency

IMAGE REJECTION (dB)

+25°C

–40°C

+85°C

1800 1900 2000

1880186018401820 1920 1940 1960 1980

FREQUENCY (MHz)

SR01624

Figure 21. HB Image Rejection vs. Frequency

Figure 20. HB Noise Figure vs. Frequency

20 18 16 14 12

IP2

(dBm)

8 6 4 2 0

1800 1900 2000

+25°C

1880186018401820 1920 1940 1960 1980

FREQUENCY (MHz)

+85°C

–40°C

Figure 22. HB IP2 vs. Frequency

SR01623

+25°C

+85°C

SR01625

1999 Mar 02

Page 16

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

–15

–17

–19

–21

1 dB COMP (dBm)

–23

–25

860 870 880 890 900 910 920 930 940 950 960

+85°C +25°C

–40°C

FREQUENCY (MHz)

SR01628

Figure 23. LB LNA 1 dB Compression vs. Frequency

–20 –21 –22 –23 –24 –25 –26 –27

1 dB COMP (dBm)

–28 –29 –30

1800 1900 20001920 1940 1960 19801880186018401820

+85°C

FREQUENCY (MHz)

+25°C

–40°C

–10 –11 –12 –13 –14 –15 –16 –17

1 dB COMP (dBm)

–18 –19 –20

860 870 880 890 900 910 920 930 940 950 960

+85°C

+25°C

–40°C

FREQUENCY (MHz)

SR01629

Figure 24. LB Mixer 1 dB Compression vs. Frequency

SR01630

Figure 25. HB 1 dB Compression vs. Frequency

1999 Mar 02

Page 17

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

S-PARAMETERS

1: 56.906Ω

–165.14Ω 200MHz

2: 32.531Ω

–80.145Ω 400MHz

3: 27.213Ω

–50.76Ω 600MHz

4: 22.594Ω

–28.63Ω

6.1759pF

900.125MHz

START: 100MHz STOP: 1.35GHz

SR01632

Figure 26. Typical S11 of the Low Band LNA at 3.75 V for the Low Band Receive Normal Mode

1: 9.2256U

170.16° 200MHz

2: 8.1698U

142.74° 400MHz

3: 6.7943U

124.27° 600MHz

4: 5.2793U

106.87° 900MHz

1999 Mar 02

START: 100MHz STOP: 1.35GHz

SR01643

Figure 27. Typical S21 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode

Page 18

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

2: 7.0159mU

75.611° 400MHz

3: 7.8297mU

90.185° 600MHz

4: 14.215mU

120.84° 900MHz

START: 100MHz STOP: 1.35GHz

SR01644

Figure 28. Typical S12 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode

1: 35.5Ω

294.66Ω 200MHz

2: 351.72Ω

–537.09Ω 400MHz

3: 77.625Ω

–220.38Ω 600MHz

4: 30.91Ω

–120.37Ω

1.4692pF 900MHz

1999 Mar 02

START: 100MHz STOP: 1.35GHz

SR01633

Figure 29. Typical S22 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode

Page 19

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

1: 133.16Ω

–326.61Ω 200MHz

2: 74.875Ω

–193.17Ω 400MHz

3: 46.625Ω

–135.03Ω 600MHz

4: 25.117Ω

–83.656Ω

2.1107pF

901.375MHz

START: 100MHz STOP: 1.35GHz

SR01634

Figure 30. Typical S11 of Low Band LNA @ 3.75V for Receive Strong Signal Mode

1: 82.778mU

56.472° 200MHz

2: 101.74mU

30.696° 400MHz

3: 106.02mU

18.799° 600MHz

4: 97.527mU

992.89m°

901.375MHz

1999 Mar 02

START: 100MHz STOP: 1.35GHz

SR01645

Figure 31. Typical S21 of the Low Band LNA @ 3.75V for Receive Strong Signal Mode

Page 20

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

1: 82.482mU

48.834° 200MHz

2: 101.97mU

15.44° 400MHz

3: 105.45mU

–4.4673° 600MHz

4: 101.04mU

–32.816°

901.375MHz

START: 100MHz STOP: 1.35GHz

SR01646

Figure 32. Typical S12 for the Low Band LNA @ 3.75V for the Receive Strong Signal Mode

1: 65.453Ω

303.47Ω 200MHz

2: 381.59Ω

–432.3Ω 400MHz

3: 74.375Ω

–206.25Ω 600MHz

4: 28.723Ω

–108.71Ω

1.6267pF 900MHz

1999 Mar 02

START: 100MHz STOP: 1.35GHz

SR01635

Figure 33. Typical S22 for the Low Band LNA @ 3.75V for the Strong Receive Signal Mode

Page 21

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

1: 102.26Ω

–217.14Ω 200MHz

2: 24.902Ω

–100.07Ω 400MHz

3: 20.596Ω

–48.596Ω 600MHz

4: 20.036Ω

–18.022Ω

9.8121pF 900MHz

SR01636

START: 100MHz STOP: 1.35GHz

Figure 34. Typical S11 for the Low Band Mixer @ 3.75V for the Receive Normal Mode

1: 15.326Ω

–41.15Ω 200MHz

2: 12.527Ω

–7.6484Ω 400MHz

3: 19.854Ω

11.1Ω 600MHz

4: 27.865Ω

–9.7334Ω

18.166pF

900.125MHz

1999 Mar 02

START: 100MHz STOP: 1.35GHz

SR01637

Figure 35. Typical S11 for the Low Band LO @ 3.75V for the Low Band Receive Normal Mode

Page 22

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

1: 70.324Ω

–120.49Ω 200MHz

2: 45.121Ω

–61.621Ω 400MHz

3: 39.195Ω

–39.092Ω 600MHz

4: 33.025Ω

–24.061Ω

7.3497pF 900MHz

START: 100MHz STOP: 1.35GHz

SR01638

Figure 36. Typical S11 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode

1: 16.617U

161.94° 200MHz

2: 12.974U

134.43° 400MHz

3: 10.255U

118.75° 600MHz

4: 7.3947U

101.63° 900MHz

1999 Mar 02

START: 100MHz STOP: 1.35GHz

SR01647

Figure 37. Typical S21 of the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode

Page 23

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

1: 4.6161mU

97.782° 200MHz

2: 6.5206mU

88.02° 400MHz

3: 9.1807mU

105.05°

600MHz

4: 15.58mU

119.06° 900MHz

START: 100MHz STOP: 1.35GHz

SR01648

Figure 38. Typical S12 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode

1: 67.703Ω

295.39Ω 200MHz

2: 436.03Ω

–336.16Ω 400MHz

3: 105.43Ω

–216.6Ω 600MHz

4: 37.477Ω

–123.19Ω

1.4355pF 900MHz

1999 Mar 02

START: 100MHz STOP: 1.35GHz

SR01639

Figure 39. Typical S22 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode

Page 24

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

1: 13.76Ω

–15.057Ω

1.55GHz

2: 10.422Ω

–5.5498Ω

1.85GHz

3: 11.58Ω

–3.0508Ω

1.95GHz

4: 12.092Ω

–616.21mΩ

125.99pF

2.05GHz

START: 1.40GHz STOP: 2.65GHz

SR01640

Figure 40. Typical S11 for the High Band LNA @ 3.75V for the High Band Receive Normal Mode

1: 12.135Ω

–53.891Ω

1.55GHz

2: 9.3379Ω

–38.457Ω

1.85GHz

3: 8.75Ω

–34.238Ω

1.95GHz

4: 8.7695Ω

–31.25Ω

2.4844pF

2.05GHz

START: 1.40GHz STOP: 2.65GHz

SR01641

1999 Mar 02

Figure 41. Typical S11 for the High Band LNA @ 3.75V for the High Band Receive Strong Signal Mode

Page 25

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

1: 20.574Ω

–38.402Ω

1.55GHz

2: 18.104Ω

–22.765Ω

1.85GHz

3: 24.446Ω

–21.71Ω

1.95GHz

4: 20.975Ω

–20.711Ω

3.7486pF

2.05GHz

START: 1.40GHz STOP: 2.65GHz

SR01642

Figure 42. Typical S11 of the High Band LO @ 3.75V for the High Band Receive Normal Mode

1999 Mar 02

Page 26

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Table 2. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Receive Normal Mode

FREQ (MHz) |S11| (U) <S11 (DEG) |S21| (U) <S21 (DEG) |S12| (U) <S12 (DEG) |S22| (U) <S22 (DEG)

100 0.89 –15.49 8.70 –165.43 0.0027 108.66 0.97 51.38 150 0.87 –22.76 8.71 –179.74 0.0038 93.41 0.96 31.54 200 0.85 –29.87 8.53 170.16 0.0049 92.10 0.96 19.54 250 0.82 –37.01 8.33 161.71 0.0065 86.08 0.95 1 1.08 300 0.79 –43.99 8.12 154.61 0.0071 82.95 0.94 4.19 350 0.75 –50.47 7.75 148.41 0.0078 69.24 0.93 –1.56 400 0.73 –56.72 7.49 144.24 0.0072 71.73 0.91 –5.69 450 0.70 –63.14 7.24 139.14 0.0078 76.99 0.91 –10.06 500 0.67 –69.13 6.97 134.34 0.0071 82.72 0.90 –13.94 550 0.63 –75.14 6.71 130.13 0.0078 84.15 0.89 –17.69 600 0.61 –81.15 6.45 126.62 0.0074 87.69 0.88 –21.14 650 0.59 –86.84 6.23 122.98 0.0079 91.07 0.88 –24.77 700 0.57 –92.30 6.03 119.16 0.0085 103.71 0.87 –28.09 750 0.55 –97.73 5.80 115.55 0.0098 103.73 0.87 –31.38 800 0.54 –102.99 5.56 11 1.56 0.0107 113.57 0.86 –34.82 850 0.53 –108.21 5.24 107.93 0.0121 1 15.45 0.86 –38.18 900 0.52 –113.27 4.97 105.40 0.0134 124.98 0.86 –41.51

950 0.51 –118.12 4.75 104.08 0.0155 127.67 0.86 –44.72 1000 0.51 –122.43 4.62 102.52 0.0175 128.87 0.86 –47.96 1050 0.51 –126.73 4.52 99.54 0.0193 128.89 0.86 –51.12 1100 0.50 –130.83 4.34 96.33 0.0217 129.85 0.86 –54.20 1150 0.51 –134.58 4.13 93.78 0.0238 128.74 0.86 –57.23 1200 0.51 –138.20 3.94 91.13 0.0269 131.20 0.86 –60.03 1250 0.51 –141.69 3.72 88.49 0.0297 130.22 0.87 –62.72 1300 0.51 –145.12 3.46 86.84 0.032 128.07 0.87 –65.57 1350 0.52 –148.25 3.25 86.69 0.033 127.73 0.87 –68.10

1999 Mar 02

Page 27

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Table 3. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Strong Signal Mode

FREQ (MHz) |S11| (U) <S11 (DEG) |S21| (U) <S21 (DEG) |S12| (U) <S12 (DEG) |S22| (U) <S22 (DEG)

100 0.94 –8.77 0.05 88.15 0.049 84.08 0.96 50.15

150 0.92 –12.15 0.07 68.32 0.069 63.51 0.95 30.01

200 0.90 –15.01 0.08 55.23 0.082 47.79 0.93 17.79

250 0.88 –17.75 0.09 46.14 0.090 37.04 0.92 9.22

300 0.87 –20.37 0.09 39.25 0.094 28.09 0.91 2.68

350 0.85 –23.15 0.10 33.96 0.099 21.40 0.90 –2.68

400 0.85 –25.85 0.10 29.86 0.100 14.70 0.89 –7.56

450 0.84 –28.73 0.10 26.35 0.102 9.32 0.88 –12.06

500 0.83 –31.65 0.10 23.06 0.103 4.37 0.88 –16.23

550 0.82 –34.56 0.10 20.07 0.103 –0.41 0.87 –20.35

600 0.81 –38.02 0.10 17.87 0.103 –5.17 0.86 –24.23

650 0.80 –41.41 0.10 15.28 0.104 –9.07 0.85 –28.29

700 0.80 –44.70 0.10 12.27 0.104 –13.29 0.85 –32.11

750 0.79 –48.40 0.10 9.05 0.103 –18.00 0.84 –35.85

800 0.78 –52.30 0.10 5.24 0.103 –23.07 0.83 –39.74

850 0.78 –56.58 0.10 2.20 0.102 –28.68 0.83 –43.59

900 0.77 –60.63 0.09 –0.26 0.099 –33.94 0.82 –47.19

950 0.77 –64.88 0.09 –2.21 0.094 –39.65 0.82 –50.95 1000 0.76 –69.05 0.09 –4.19 0.090 –44.01 0.81 –54.29 1050 0.76 –73.21 0.09 –7.58 0.086 –47.95 0.81 –57.67 1100 0.76 –77.26 0.09 –11.56 0.084 –52.34 0.81 –60.86 1150 0.76 –81.34 0.08 –16.05 0.080 –58.43 0.80 –64.05 1200 0.76 –85.37 0.08 –19.50 0.076 –62.90 0.80 –66.96 1250 0.76 –89.33 0.07 –23.71 0.074 –68.35 0.80 –69.89 1300 0.76 –93.28 0.07 –27.20 0.072 –75.17 0.79 –72.64 1350 0.75 –97.37 0.06 –31.20 0.068 –82.58 0.79 –75.21

1999 Mar 02

Page 28

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Table 4. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Transmit On (Analog) Mode

FREQ (MHz) |S11| (U) <S11 (DEG) |S21| (U) <S21 (DEG) |S12| (U) <S12 (DEG) |S22| (U) <S22 (DEG)

100 0.80 –18.49 16.98 –170.30 0.003 121.40 0.95 50.55

150 0.76 –27.25 17.07 173.61 0.004 100.49 0.94 30.44

200 0.72 –35.34 16.62 161.95 0.005 87.01 0.93 18.29

250 0.67 –43.14 15.82 152.47 0.005 88.74 0.92 9.80

300 0.62 –50.04 14.89 144.65 0.007 80.87 0.91 2.68

350 0.57 –55.41 13.73 138.33 0.007 64.95 0.89 –2.99

400 0.55 –61.58 12.97 134.43 0.007 90.16 0.87 –6.38

450 0.51 –67.13 12.27 129.49 0.007 90.97 0.86 –10.66

500 0.47 –72.08 11.53 125.20 0.008 89.19 0.85 –14.35

550 0.44 –76.94 10.83 121.58 0.009 96.23 0.84 –17.92

600 0.42 –81.92 10.24 118.69 0.009 98.83 0.84 –21.27

650 0.40 –86.62 9.78 115.74 0.009 102.03 0.83 –24.85

700 0.38 –91.05 9.32 112.66 0.010 107.95 0.83 –28.04

750 0.37 –95.76 8.89 109.66 0.012 108.58 0.83 –31.27

800 0.36 –100.37 8.46 106.44 0.012 114.73 0.82 –34.68

850 0.35 –105.06 7.92 103.48 0.014 115.62 0.82 –38.05

900 0.34 –109.12 7.39 101.58 0.015 116.40 0.82 –41.29

950 0.34 –113.76 7.02 100.76 0.017 116.04 0.82 –44.70 1000 0.34 –117.50 6.81 99.95 0.019 122.13 0.82 –47.58 1050 0.34 –121.31 6.64 97.57 0.021 122.61 0.83 –50.73 1100 0.34 –124.67 6.36 94.92 0.023 121.36 0.83 –53.76 1150 0.35 –127.76 6.09 92.79 0.025 123.58 0.83 –56.81 1200 0.35 –130.93 5.80 90.59 0.026 125.25 0.83 –59.62 1250 0.36 –133.78 5.48 88.25 0.030 123.53 0.84 –62.32 1300 0.36 –136.90998 5.10 87.00 0.03 122.37 0.84 –65.27 1350 0.37 –140.02216 4.82 87.05 0.03 122.64 0.85 –68.06

1999 Mar 02

Page 29

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Table 5. Typical S-Parameters of Low Band Mixer Input at VCC = +3.75V, LB Receive Normal Mode

FREQ (MHz) |S11| (U) <S11 (DEG)

100 0.85 –13.10 150 0.84 –17.65 200 0.85 –23.74 250 0.85 –29.63 300 0.85 –37.49 350 0.85 –45.23 400 0.85 –54.50 450 0.80 –64.14 500 0.75 –73.90 550 0.70 –82.34 600 0.67 –91.47 650 0.57 –100.54 700 0.53 –106.44 750 0.51 –114.37 800 0.49 –123.87 850 0.48 –132.17 900 0.49 –141.42

950 0.47 –150.07 1000 0.47 –160.64 1050 0.47 –169.49 1100 0.47 –179.79 1150 0.48 171.14 1200 0.48 162.01 1250 0.49 154.08 1300 0.50 144.55 1350 0.51 136.1 1

1999 Mar 02

Page 30

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Table 6. Typical S-Parameters of Low Band LO Input at VCC = +3.75V, LB Receive Normal Mode

FREQ (MHz) |S11| (U) <S11 (DEG)

100 0.76 –55.83 150 0.73 –78.35 200 0.70 –98.64 250 0.68 –116.73 300 0.66 –133.17 350 0.64 –147.82 400 0.61 –161.51 450 0.59 –173.68 500 0.55 173.99 550 0.51 162.15 600 0.46 150.30 650 0.38 140.69 700 0.29 132.76 750 0.18 131.71 800 0.10 171.44 850 0.18 –150.19 900 0.31 –149.41

950 0.42 –157.78 1000 0.50 –166.73 1050 0.57 –175.14 1100 0.61 177.49 1150 0.64 170.74 1200 0.66 164.22 1250 0.68 157.61 1300 0.68 150.89 1350 0.65 144.80

1999 Mar 02

Page 31

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Table 7. Typical S-Parameters of HB LNA Input at VCC = +3.75V, HB Receive Normal Mode

FREQ (MHz) |S11| (U) <S11 (DEG)

1400 0.58 –135.43 1450 0.59 –138.48 1500 0.59 –141.42 1550 0.60 –144.44 1600 0.62 –146.93 1650 0.63 –149.85 1700 0.65 –154.08 1750 0.66 –158.38 1800 0.66 –162.67 1850 0.66 –167.09 1900 0.65 –170.72 1950 0.63 –172.76 2000 0.64 –175.38 2050 0.61 –178.44 2100 0.60 –179.38 2150 0.59 179.32 2200 0.58 178.44 2250 0.58 177.61 2300 0.57 176.29 2350 0.57 175.39 2400 0.57 174.35 2450 0.56 173.01 2500 0.57 172.12 2550 0.57 170.91 2600 0.56 169.89 2650 0.56 168.41

1999 Mar 02

Page 32

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Table 8. Typical S-Parameters of HB LNA Input at VCC = +3.75V, HB Strong Signal Mode

FREQ (MHz) |S11| (U) <S11 (DEG)

1400 0.81 –73.99 1450 0.81 –77.23 1500 0.81 –80.62 1550 0.80 –84.00 1600 0.80 –87.02 1650 0.80 –90.35 1700 0.79 –93.54 1750 0.79 –96.48 1800 0.79 –100.32 1850 0.79 –103.54 1900 0.79 –107.23 1950 0.79 –110.05 2000 0.77 –113.75 2050 0.78 –114.79 2100 0.79 –117.61 2150 0.79 –120.50 2200 0.80 –122.65 2250 0.79 –125.91 2300 0.80 –128.17 2350 0.79 –130.64 2400 0.79 –133.19 2450 0.79 –135.66 2500 0.79 –138.22 2550 0.79 –140.56 2600 0.79 –143.22 2650 0.79 –145.47

1999 Mar 02

Page 33

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Table 9. Typical S-Parameters of HB LO Input at VCC = +3.75V, HB Receive Normal Mode

FREQ (MHz) |S11| (U) <S11 (DEG)

1400 0.62 –87.50 1450 0.61 –90.87 1500 0.60 –94.44 1550 0.60 –98.86 1600 0.59 –102.10 1650 0.59 –106.34 1700 0.58 –110.67 1750 0.57 –114.48 1800 0.57 –119.86 1850 0.55 –126.14 1900 0.48 –134.66 1950 0.43 –123.95 2000 0.47 –126.26 2050 0.48 –128.33 2100 0.50 –131.34 2150 0.50 –135.52 2200 0.50 –138.76 2250 0.50 –142.68 2300 0.50 –146.60 2350 0.49 –150.21 2400 0.49 –154.30 2450 0.48 –157.62 2500 0.47 –161.79 2550 0.46 –166.32 2600 0.45 –170.41 2650 0.43 –174.86

1999 Mar 02

Page 34

Philips Semiconductors Product specification

SA1920Dual-band RF front-end

LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm SOT313-2

1999 Mar 02

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Philips Semiconductors Product specification

SA1920Dual-band RF front-end

NOTES

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Philips Semiconductors Product specification

SA1920Dual-band RF front-end

Data sheet status

Objective specification

Preliminary specification

Product specification

Product status

Development

Qualification

Production

Definition

This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product.

This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

[1]

[1] Please consult the most recently issued datasheet before initiating or completing a design.

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can

reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381

 Copyright Philips Electronics North America Corporation 1999

Date of release: 03–99

Document order number: 9397 750 05354

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1999 Mar 02