Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1667 2SA1668
DESCRIPTION
·With TO-220F package
·Complement to type 2SC4381/4382
APPLICATIONS
·For TV vertical output ,audio output driver
and general purpose applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA1667 -150
V
CBO
V
CEO
V
EBO
IC Collector current -2 A
IB Base current -1 A
Collector-base voltage
2SA1668
2SA1667 -150
Collector-emitter voltage
2SA1668
Emitter-base voltage Open collector -6 V
Open emitter
Open base
V
-200
V
-200
PC Collector dissipation TC=25℃ 25 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1667 2SA1668
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
hFE DC current gain IC=-0.7A ; VCE=-10V 60
fT Transition frequency IC=-0.2A ; VCE=-12V 20 MHz
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 60 pF
Switching time
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=-0.7A;IB=-70mA -1.0 V
Collector cut-off
current
Emitter cut-off current VEB=-6V; IC=0 -10 μA
2SA1667 -150
IC=-25mA ; IB=0
2SA1668
2SA1667 VCB=-150V;IE=0 -10 μA
2SA1668 VCB=-200V;IE=0 -10 μA
-200
V
ton Turn-on time 0.40 μs
ts Storage time 1.50 μs
tf Fall time
=-1A ;IB1=-IB2=-0.1A
I
C
V
=-20V ,RL=20Ω
CC
0.50 μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1667 2SA1668
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1667 2SA1668
4
Loading...