Datasheet SA1620BE Datasheet (Philips)

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Page 1

INTEGRATED CIRCUITS

SA1620

Low voltage GSM front-end transceiver

Product specification Supersedes data of 1996 Oct 08 IC17 Data Handbook

 

1997 May 22

Page 2

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

DESCRIPTION

The SA1620 is a combined receive (Rx) and transmit (Tx) front-end for GSM cellular telephones. The receive path contains two low noise amplifiers (LNA1 and LNA2) with four switchable attenuation steps. A Gilbert Cell mixer in the receive path down-converts the RF signal to a first IF of 70 to 500 MHz. A second Gilbert Cell in the transmit path transposes a GMSK or phase modulated IF to RF by image reject mixing and has a fixed IF of 400 MHz. A buffered LO signal is fed to Rx and Tx mixers. Rx or Tx path or the entire circuit may be powered-down.

FEA TURES

•Excellent noise figure: <2dB for the LNAs at 950MHz

•LNAs matched to 50Ω with external matching components

•LNAs with gain control, 59dB dynamic range in four discrete steps

•LNA gain stability ±0.5dB within -40 to 85°C

PIN CONFIGURATION

LQFP Package

VccL1

OUT1

GNDL1A

GNDL1

45464748

CCL2

IN2

GNDL2

OUT2

INM

INMX COMP2 COMP1

4 5 6

9 10 11 12

13 14 15 16 17 18 19

GNDL2A

•Feedthrough attenuation LNA1 to Rx mixer ≥ 35dB

•Tx power adjustable from -3 to +12dBm by external resistor

•Direct supply: 2.7V to 5.5V

•Battery supply voltage V

= 3.3V to 7.5V or direct supply

BATT

•Two DC regulators programmable for 3.0V, 3.4V, 3.7V or 5.1V

•Low current consumption: 28mA for Rx or 59mA for Tx

•Fully compatible with SA1638 GSM IF Digital I/Q circuit

APPLICATIONS

•900MHz front end for GSM hand-held units

•Portable radio, TDMA systems

IN1

RETx

GNDTx3

TxO

Tx0X

GNDTx4

PDTx

424344

48–PIN LQFP

394041 3738

20 21 22 23 24

PONBUF

36 35 34 33 32 31 30 29 28 27 26 25

BATT

PON GNDREG1

VREG1 VREGF2 VREG2

GNDREG2 CON1

LO INX LO IN CON2 GNDTx2

PONRx

GNDBM

GND1

RxIF

RxIFX

GND2

TxIF

TxIFX

GND3

VccTx1

GNDTx1

VccTx2

SR00127

Figure 1. Pin Configuration

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

48-Pin Thin Quad Flat Pack (TQFP)

-40 to +85°C

SA1620BE SOT313-2

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

CCXX

BATT

1997 May 22 853-1784 18066

Supply voltages 2.7 to 5.5 V Battery voltage 3.3 to 7.5 V Operating ambient temperature range -40 to +85 °C

Page 3

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

BLOCK DIAGRAM

COMP1

COMP2

VCCGNDBM

GNDTx2

GNDTx1

GNDTx3

GNDTx4

GND1

GND2

GND3

PON

BATT

CON1

CON2

PDTx

PONRx

PONBUF

TxOX

RETx

VCCL1

VCCL2

TxO

IN1

TxIF

TxIFX

LO IN LO INX

RxIF

RxIFX

VREG2 VREG2F2

GNDREG2

GNDREG1

VREG1

VCCTx1 VCCTx2

BANDGAP

BIAS SUPPLIES

SINGLE

SIDEBAND

MIXER

LNA1

ATTENUATION

CONTROL LOGIC

LNA2

VOLTAGE REGULATORS

TLO

BUFFER

TLOX

LINEAR

IF LEVEL

CONTROL

LO INPUT

BUFFER

RLO

RLOX

1997 May 22

GNDL1

OUT1

IN2

GNDL1A

GNDL2

Figure 2. Block Diagram

INM

OUT2

GNDL2A

INMX

SR00129

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Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

PIN DESCRIPTIONS

Pin No. Pin Name Description DC Regulators

15 GND1 Ground of regulator supply 18 GND2 Ground of regulator supply 21 GND3 Ground of regulator supply 26 CON2 Control 2, voltage select for regulator 1

29 CON1 Control 1, voltage select for regulator 1

30 GNDREG2 Ground of regulator 2 31 VREG2 Output of regulator 2 32 VREG2F2 Feedback of regulator 2 33 VREG1 Output of regulator 1 34 GNDREG1 Ground of regulator 1 35 PON Power-on input of regulators 36 V

Rx Path

10 COMP2 Capacitor for bias stabilization 11 COMP1 Capacitor for bias stabilization 12 VCCBM VCC for Rx Bias and Rx mixer

NOTES:

1. Device is ESD sensitive. There are no ESD protection diodes at Pins 16, 17, 40 and 41. Thus, open-collector outputs may have increased DC voltage or higher AC peak voltage.

2. Pins 15, 18 and 21 are connected to each other and to a separate ground in REG1 and REG2.

3. Pins 23, 25, 42 and 39 are connected to each other and to the Tx path, LO buffer and associated bias supplies.

4. Pins 22 and 24 are connected to each other providing a sense input. They are also connected to the Tx path, LO buffer and associated bias supplies.

5. Pins 30 and 34 are not internally connected. They must be connected to external grounds.

6. Pins 48, 1, and 12 are not internally connected and have no ESD protection diodes between them. Power may be saved by connecting V

BATT

1 VCCL2 Positive supply for LNA2 2 IN2 Input LNA2 3 GNDL2 Ground L2 for LNA2 4 GNDL2A Ground L2A for LNA2 5 OUT2 Output LNA2 6 B Attenuation select B for LNA1 and LNA2 7 A Attenuation select A for LNA1 and LNA2 8 INM RF input for Rx mixer, open emitter 9 INMX Inverse RF input for Rx mixer, open

L1 and IN1 or VCCL2 and IN2 to ground if LNA1 or LNA2 is not needed.

and 2

Input of regulator 1 and 2

emitter

Pin No. Pin Name Description

13 GNDBM Ground for Rx Bias and Rx mixer 14 PONRx Power on input for Rx bias supply 16 RxIF IF output, open collector 17 RxIFX Inverse IF output, open collector 44 IN1 Input to LNA1 45 GNDL1 Ground L1 for LNA1 46 GNDL1A Ground L1A for LNA1 47 OUT1 Output LNA1 48 VCCL1 Positive supply for LNA1

Tx Path

19 TxIF IF input for Tx 20 TxIFX Inverse IF input for Tx 22 VCCTx1 Positive supply for Tx input 23 GNDTx1 Ground for Tx input 24 VCCTx2 Positive supply for LO and Tx input 25 GNDTx2 Ground for LO and Tx input 38 PDTx Power down Tx input 39 GNDTx4 Ground for Tx output 40 TxOX Inverse Tx output, open collector 41 TxO Tx output, open collector 42 GNDTx3 Ground 1 for Tx output side 43 RETx Reference resistor for Tx output current

Elements for Tx and Rx Path

27 LO IN Input for Local Oscillator signal 28 LO INX Inverse input for LO or AC ground 37 PONBUF Power on first stage LO input buffer and

bias

1997 May 22

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Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

CCXX

BATT

∆V VCCTx1,2 pins to VCCBM -0.3 to +1 V

∆VG Any GND pin to any other GND pin 0 V

JMAX

MAX

STG

, V

TXO

TXOX

, V

RXIF

RXIFX

NOTE:

1. Maximum junction temperature is determined by the power dissipation is determined by the operating ambient temperature and the thermal resistance, θ

Supply voltages -0.3 to +6.0 V Battery voltage -0.3 to +8.0 V Voltage applied to any other pin -0.3 to (V

+0.3) V

CCXX

Power dissipation, TA = 25°C (still air) 800 mW Maximum operating junction temperature 150 °C Maximum power input/output +20 dBm Storage temperature range –65 to +150 °C Positive RF peak voltage at Tx outputs 6 V Positive IF peak voltage at Rx mixer outputs 6 V

. 48-pin TQFP: θJA = 67°C/W.

DC REGULA TORS

Two low drop regulators (REG1 and REG2) are included on the chip and may be used to deliver the supply voltage of the main circuitry (e.g., 3V) out of the battery (at V Figure 4 and in Table 1.

REG1 is intended to supply, at least, the internal functions of the SA1620. Both regulators may also be used for external circuitry. For this application, different voltages may be programmed as shown in Table 1.

The transmitter supply pins (V connection in the feedback loop of REG1 and must be externally connected to pin VREG1. For REG2, the sensor pin VREGF2 must be connected to VREG2.

All ground pins are internally bonded to the header except for pins GNDL1, GNDREG1 and GNDREG2.

When both regulators are not used, connect pins V CON1, CON2, VREG1, VREG2 and VREG2F2 to ground.

= 3.3 to 7.5V) as shown in

BATT

Tx1,2) also operate as a sensor

, PON,

BATT

Table 1. DC Reg Output Voltage Control Pins

CON1 CON2 VREG1 VREG2 UNITS

L L 3 ± 5% 3 ± 5% V L H 3.4 ± 5% 3.4 ± 5% V H L 3.7 ± 5% 3.7 ± 5% V H H 5.1 ± 5% 5.1 ± 10% V

NOTES:

1. Logic levels at CON1 and CON2: H – Open circuit. Pin must not be connected externally. Logic high level supplied on chip. L – Connected to ground.

2. Currents at CON1 and CON2: H – 0µA L (PON = H) – 50µA L (PON = L) – <1µA

1997 May 22

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

UNITS

SA1620Low voltage GSM front-end transceiver

Table 2. DC Regulators

and V

LIMITS

VREG1

VREG2

REG2

/10 mA

at V

BATT

= 3.3V,

kHz

TEST

BATT

VREG1,

VREG2

INT1

INT2

, I

INT01

VREG1MAX

VREG2MAX

CONDITIONS

Common positive input voltage at both regulators VREG1+0.3 V Output voltages of regulators 1 and 2 V

= 3.3V 2.85 3 3.15 V

BATT

Internal current of REG1 in power-on mode 4 + I Internal current of REG2 in power-on mode 2.5 + I Internal current in power-down mode <15 µA

INT02

Max output current at VREG1 100 mA

Max output current at VREG2 30 mA V V V

BATT BATT BATT

= 3.3V, I = 3.3V, I = 7.5V, I

= 0.1mA 0.03

REG1

= 100mA 60

REG1

= 100mA 80

REG1

MIN TYP MAX

≤100kHz ≤–61 10MHz ≤–32

REG

100MHz ≤–37 400MHz ≤–48

NOTES:

1. Power-on pin of Regulator 1 and 2: PON

2. Input currents at PON: <1µA. There are no pull-up or pull-down resistors.

3. Feedthrough attenuation from the logic input PON to the outputs VREG1 and VREG2: ≥40dB.

4. Recommended load capacitors: C529 = C530 = 1µF to ground with series resistance ≤0.1Ω. See Figure 4. Additional optional capacitor ≤1000µF with series resistance ≤5Ω.

≥ 150°C a thermal switch reduces the output current.

5. At T

6. Typical open loop bandwidths of regulator 1 at V

7. Feedthrough attenuation (at the indicated frequency f) from the input V (CON1=CON2=L)

= 3V and C529 = 1µF.

REG1

to the outputs V

BATT

REG1

1997 May 22

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

VR1Internal supply at pin RET

IR1Current at pin RET

SA1620Low voltage GSM front-end transceiver

DC ELECTRICAL CHARACTERISTICS

= +3V, TA = 25°C; unless otherwise stated.

CCxxx

LIMITS

MIN TYP MAX

Transmitter

VCC

R1 External resistor

Total supply current

Low noise amplifiers

L1 Current at pin VCCL1 G1hi mode 2.5 3.5 5 mA

VCC

L2 Current at pin VCCL2 G2hi mode 2.5 3.5 5 mA

VCC

Receiver

VCC

Total supply current

Regulators

Vreg1 Voltage @ 100mA load Con1 Con2

L L 2.85 3.0 3.15 V L H 3.23 3.4 3.57 V H L 3.515 3.7 3.885 V H H 4.61 5.1 5.61 V

Vreg2 Voltage @ 30mA load Con1 Con2

L L 2.85 3.0 3.15 V L H 3.23 3.4 3.57 V H L 3.515 3.7 3.885 V H H 4.61 5.1 5.61 V

Logic levels

V V

Logic 1 level PONBUF, PDTx, PONRx, A, B 2.0 V

Logic 1 level P

Logic 0 level 0 0.8 V

Input logic current 1 µA

Input logic capacitance 1.7 pF

NOTES:

+ I

1. The output current I

2. Thresholds are independent of supply voltages. Thus the SA1620 is compatible with SA1638 and with the power down inputs of usual

TXO

is adjustable by the external resistor R546. I

TXOX

external voltage regulators.

3. P

logic 1 max is V

BATT

Transmit mode

= 240Ω

546

59 90 mA

240 Ω VCCTx1,2 = 2.7V 0.43 VCCTx1,2 = 5.5V 0.45

R546 = 240Ω, VCCTx1,2 = 2.7V 1.7 R546 = 240Ω, VCCTx1,2 = 5.5V 1.8

Receive mode

= 240Ω

546

+ I

TXO

TXOX

= 10 * I

2.0 V

, I

R546

28 39 mA

= VR1/R546,

CCBM

BATT

V V

1997 May 22

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

∆S21/∆T

Gain temperature sensitivit

dB/°C

∆S21/∆T

Gain temperature sensitivit

dB/°C

SA1620Low voltage GSM front-end transceiver

AC ELECTRICAL CHARACTERISTICS

= +3V, TA = 25°C; RF = 940MHZ; IF=400MHz, fLO=RF + IF; LO = –15dBm; unless otherwise stated.

CCXX

LIMITS

Low Noise Amplifier LNA1

MIN

-3σ TYP 3σ MAX

G1hi mode 9.4 10 10.6

Gain

G1hi mode, RF = 1800MHz –2.5

G1lo mode –13 –12 –11

IP3 G1lo mode 28

G1hi mode 0.003 G1lo mode 0.0140

∆S21/

∆V

CCL1

Gain/voltage sensitivity 0.1 dB/V

∆S21/∆f Gain frequency variation 0.01 dB/MHz

-1dB

Reverse isolation G1hi mode –19 dB

12 11 22

Input match Output match

50Ω –11 dB 50Ω –14 dB

Input 1dB gain compression G1hi mode –15.5 –14 –12.5 dBm

IIP3 Input third order intercept –5.5 –4 –2.5 dBm

IIP3/∆t Input third order intercept 0.011 dB/°C

NF Noise figure 1.9 dB

OFF

Low Noise Amplifier LNA2

Turn-on time 7 µs Turn-off time 0.5 µs

G2hi mode 9 10 11 dB

G2hi mode, RF = 1800MHz –1.5 dB

Gain

G2lo1 mode –8.5 –7.5 –6.5 G2lo2 mode –22.5 –21.5 –20.5

G2lo3 mode –30 –28.5 –27 G2lo1 mode 18

IP3

G2lo2 mode 20 G2lo3 mode 25

G2hi mode 0.003

G2lo1,2,3 modes 0.014

∆S21/

∆V

CCL2

Gain/voltage sensitivity 0.1 dB/V

∆S21/∆f Gain frequency variation 0.01 dB/MHz

-1dB

Reverse isolation G2hi mode –24 dB

12 11 22

Input match Output match

50Ω –13 dB 50Ω –15 dB

Input 1dB gain compression G2hi mode –18 –16 –14 dBm

IIP3 Input third order intercept –8 –6 –4 dBm

IIP3/∆t Input third order intercept 0.019 dB/°C

NF Noise figure 2 dB

OFF

Turn-on time 7 µs Turn-off time 0.5 µs

1997 May 22

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

Power conversion gain

SA1620Low voltage GSM front-end transceiver

AC ELECTRICAL CHARACTERISTICS (continued)

LIMITS

MIN

-3σ TYP 3σ MAX

Rx Mixer

7.5 +8.5 9.5

-1dB

Mixer input match at ports INM and INMX

SSB combined noise figure 10 dB

Input 1dB compression –7.3 dBm

RF = 1800MHz –4

–13 dB

IIP3 Input third order intercept 0 2 4 dBm

IIP3/∆t Input third order intercept 0.005 dB/°C

IIP2 Input second order intercept 19 dBm

RFM-IF

LOfloor

LO-IF

LO-RFM

LO-RF1

LNA1-2

LNA2-M

LNA1-M

Receiver

RF feedthrough 400MHz –26 dB LO floor feedthrough 400MHz –30 dB LO feedthrough to IF 1.3GHz –16 dB LO to mixer input feedthrough 1.3GHz –50 dBm LO to RF LNA1 input

feedthrough LNA1 output to LNA2 input

feedthrough LNA2 output to mixer input

feedthrough LNA1 output to mixer input

feedthrough

1.3GHz –65 dBm

400MHz

1290-1760MHz

–41 –26

1290-1760MHz –23 dB

400MHz

1290-1760MHz

–50 –35

Cascaded gain A,B Logic Level

H,H 23.5 26.5 28.5 30.5 33.5 dB

H,L 6 9 11 13 16 dB L,H –8 –5 –3 –1 +2 dB L,L –41 –36 –32 +28 –23 dB

Input IP3 @ RFin=–40dBm H,H –20 –18 –16 dBm

LO input

Z P

SAT

Input impedance

(each single-ended input) Input power –25

1.3GHz 35-j97 Ω

Transistor saturation limit, max input amplitude

–15 dBm 500 mV

Tx IF input

|ZIN| Input impedance 400MHz 2 kΩ

Input power –20 dBm

Tx RF output

OUT

R546 = 240Ω,

Tx1,2 = 3V

5 7.5 8.5 9.5 dBm

NOTES:

1. Due to our automatic test equipment accuracy and repeatability test limits may not reflect the ultimate device performance. Standard deviations are calculated from characterization data.

2. If the LNA1 is not needed, connect pin V

3. Simple L/C elements are needed to achieve specified return loss.

L1 and IN1 to GND. If the LNA2 is not needed, connect pin VCCL2 and IN2 to GND.

4. The mixer RF inputs (emitters of a Gilbert Cell) may be driven by a symmetrical matching network.

5. Input symmetry suppression is such that the product 6*RF–4*LO is to be suppressed by at least 66dB relative to the wanted IF output when the input to the mixer is at –32dBm.

6. LNA1, LNA2, and the mixer are cascaded. 0 db insertion loss between LNA1 out to LNA2 in and LNA2 out to mixer in.

7. Lowering the LO input power (P

) from TYP to MIN will lower the mixer gain (PGC) by 1 dB.

1997 May 22

Page 10

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

Table 3. Power-Down and Tx/Rx Control Logic

No. PONBUF PDTX PONRX MODE RESULT

1 H H L Standby LO buffer active, Tx and Rx path inactive 2 H L L Transmit LO buffer active, Tx path active, Rx path inactive (LNAs + mixer) 3 H H H Receive Tx path inactive, LO buffer and Rx path active (LNAs + mixer) 4 H L H Calibrate Tx path and Rx LNAs inactive, LO buffer and Rx mixer active 5 L x x Power-Down Tx- and Rx-path, LO buffers and Bias inactive

NOTES:

1. Logic levels of PONBUF, PDTx and PONRx: TTL, see DC Electrical Characteristics.

2. Logic levels / polarities are compatible with Philips Semiconductors Power Amp Controller PCA5075 and synthesizers UMA1019 or SA8025.

3. First stage of LO buffer and parts of bias supply are powered on by PONBUF .

4. Tx- or Rx-paths may be activated for special timeslots. Lines 1 and 4 show options to support DC offset calibrations at baseband mixers, following in the receiver chain (SA1638).

Table 4. Gain Control Logic for LNA1 and LNA2

INPUT

a b

H H 0 G1hi G2hi on on H L 1 G1hi G2lo1 on off

L H 2 G1hi G2lo2 on off L L 3 G1lo G2lo3 off off

NOTES:

1. Logic levels of a and b: TTL

2. For values of G1hi and G1lo, G2hi, G2lo1, G2lo2 and G2lo3 see LNA1 and LNA2 AC Electrical Characteristics.

ATTENUATION

STEP

LNA1 LNA2 LNA1 LNA2

GAIN POWER CONSUMPTION

1997 May 22

Page 11

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

BOUT

(to SA1620 ATTENUATION

CONTROL LOGIC INPUTS)

AOUT

SA1638

400MHz

LINEAR

IF LEVEL

CONTROL

400MHz

LO1

(1290–1360MHz)

BUFFER

LO2

800MHz

SAW

CLKIN

13MHz

(SA8025, UMA1019)

FREQUENCY SYNTHESIZER

INTERFACE TO

MICROCONTROLLER

1997 May 22

INTERFACE TO

MICROCONTROLLER

SA1620

INPUT

SERIAL

PCA5075

POWER AMP

CONTROLLER

SSB

MIXER

Tx/Rx

POWER

SUPPLY

ATTENUATION

Tx:

935–960MHz

Figure 3.

CONTROL LOGIC

Rx:

890–915MHz

LNA1 LNA2

SR00130

Page 12

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

Overview of Dual GSM/PCN Architecture

The SA1620 RF front-end and SA1638 IF transceivers form a dual conversion architecture which uses a common IF and standard I/Q baseband interface for both transmit and receive paths. This approach avoids the screening difficulties of direct modulation in the transmit direction and the mass production and practical performance issues related to direct conversion in the receive direction. The time division multiplex nature of the GSM system permits integration of the transmit and receive functions together on the one RF and one IF chips. This simplifies the distribution of local oscillator signals, maximizes circuitry commonality, and reduces power consumption.

The SA1620 and SA1638 allow considerable flexibility to optimize the transceiver design for particular price/size/performance requirements, through choice of appropriate RF and IF filters. The receive IF may be chosen freely in the range 70–500MHz, while the transmit IF is fixed to 400 MHz. The comparison frequency of the SA1638 PLL is high in order to provide fast switching time.

With suitable choice of the IF, an identical SA1638 IF receiver design can be used for both 900MHz GSM and 1800MHz PCN (DCS1800) equipment.

General Benefits/Advantages

•2.7V operation. Compatible with 3V digital technology and

portable applications. (Higher voltage operation also possible, if desired.)

•Excellent dynamic range. The availability of two LNAs allows

flexibility in receiver dynamic design for portable and mobile GSM spec. applications with appropriate filters. If for a particular application a GaAs or discrete front-end is desired, one of the LNAs can be left unpowered. The placing of the AGC gains switches at the front means that for most of the time some attenuation will be inserted, further increasing typical dynamic performance beyond that specified by GSM.

•High power transmit output driver, delivering +8.5dBm output.

This is sufficient to drive a filter and power amplifier input, without a driver amplifier. To avoid unnecessary current consumption the output power can be reduced, if not required, by appropriate choice of an external resistor.

•DC offsets generated in the receive channel are independent of

the AGC setting, and correctable by software to prevent erosion of signal handling dynamic range by DC offsets. Independence of DC from AGC setting is achieved by putting the gain switches in the RF front-end.

•Minimal high-quality filter requirements. As a result of the

integration in the SA1638 of high quality channel selectivity filters, only sufficient filtering is needed in the receive path to provide blocking protection for the second mixers. This reduces receiver cost and size.

•Operation at a high IF allows RF image reject filters to be relaxed.

For example, at a 400MHz IF, the natural gain roll-off in the LNAs and mixer suppresses the image signal in the 1800MHz band by typically 28dB below the desired 900MHz band signal.

Receive Path

Multiple LNAs allow the flexibility to exploit the best choice of currently available filters (on performance, size, or cost grounds). This approach is preferable to a single high-gain stage as the stray cross-coupling effects between pins remain manageable. In a single stage amplifier this would limit the amount of rejection of out-of-band signals that could be achieved, and would also limit the amount of AGC attenuation that could be practically implemented.

The LNAs are powered up only when PONBUF, PDTx and PONRx are high, to allow a high degree of battery economy. If greater sensitivity is required for an application, an external preamplifier circuit can be used instead of LNA1, and LNA1 left unconnected.

A special mode is provided with just the IF output related circuitry active in order to allow calibration of the DC offset at the SA1638 baseband receive outputs. This offset contains a contribution due to coupling effects between the second local oscillator and the IF circuitry, and therefore the receiver is set up in the receive state (but with incoming signals excluded) to allow accurate offset calibration.

Gain Control

Gain control is implemented in the SA1620 RF front-end. This avoids the disruption of the DC offset at the baseband IQ outputs that is typically caused by changes in the AGC. The SA1620 and SA1638 are designed so that the GSM dynamic range requirements can be met with the AGC remaining on the maximum gain setting.

These gain steps scale the dynamic range of the received signal (e.g., 90dB for GSM) into the dynamic range of the baseband processing device.

The absolute gain tolerances may be measured together with the attenuation tolerances of external filters during production of the receiver equipment. After software calibration switching from one dynamic range to another will cause only minor errors.

Tx Path

TXIF and TXIFX are differential IF inputs for phase modulated signals (e.g., GMSK). There is an IF level control loop which provides a constant amplitude to an image reject up mixer. Thus, this mixer operates linearly in the IF path, independent of IF level tolerances.

The single sideband up mixer is sufficient in quadrature to achieve the typical performance indicated in Table 6 over an IF range of 250 to 500MHz. The mixer is operating in switching mode by well matched 0° and 90° LO signals, optimized for 1.1 to 1.5GHz.

The Tx output stage operates in switching mode. Thus, parasitic AM at the IF is not transferred. The outputs TXO and TXOX may be used symmetrically or single-ended. Some spurious emissions will be very low when a symmetrical output signal is used.



6.25V  (Z

OUT

 Z

Pin 40

R546

is adjustable with R546 and is accurate to

Pin 41



)  (I

R546

546

OUT

according to Figure 4 and Characteristics. P

within ±1dB over the full voltage range 2.7 to 5.5V, and ±0.5dB from a given supply voltage. The absolute limit of the negative peak voltage swing at pins TxO and TxOX is V absolute limit of the positive peak voltage is +6V .



)

R546

according to DC Electrical

= VCCTx1,2 – 1V. The

SAT

1997 May 22

Page 13

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

L612

I=56n

C610

c=3.9p

LNA_In

c=33p

C611

TMXR_Out

C613

690

C575

c=33p

V503

c=33p

C609

C573

r=100

C574

c=33p

Vbatt

vdc=7.5

– +

c=3.9p

c:1p

R651

C635

Vcc/Gnd

335

R546

r=240

940

C650

c=33p

605

c–100n

C527

c=100n

PDTx

TxOX

TxO

RETx

IN1

OUT1

VccL1

c=10u

PONBUF

GNDTx4

GNDTx3

GNDL1

GNDL1A

C636

VBATT

VCCL2

C528

c=100n

Vbatt/Gnd

PON

IN2

Vcc

VREG1

GNDREG1

GNDL2

GNDL2AAOUT2

Open/Gnd

CON1

LO_In

C564

c=33p

C565

LOINX

C=33p

LOIN

Open/Gnd

CON2

GNDTx2

8/12/96

VRegF2

c=1u

C530

(ceramic!!!)

C=1u

C529

(ceramic!!!)

VREG2

VREGF2

GNDREG2

10 mils wide, xxx mils long on 31 mils

thick FR4 substrate.

SA 1620

xxx

INM

INMX

COMP1

COMP2

VCCBM

VccTx2

GNDTx1

VccTx1

GDN3

TxIFX

TxIF

GND2

RxIFX

RxIF

GND1

PONRx

GNDBM

C618

C615

350

c=8.2p

350

C622

gnd

c=10p

C623

c=10p

Vcc/Gnd

c=33p

C539

L617 I=22n

TMXR_In

I=22n

L627

L624

C628

c=3.3p

C620

I=56n

c=100n

1997 May 22

LNA1_Out

C533

c=33p

C534

c=33p

c=1n

C339

890

L648

LNA2_In

I=56n

650

C336

LNA2_Out

Vcc/Gnd

c=33p

C644

RMXR_In

Figure 4. Application Circuit

340

Vcc/Gnd

c=33p

340

180

C631

c=4.7p 420

c=10n

R641

C380

r=100

C645

c=10n

C643

c=33p

C535

c=100n

C626 c=3.3p

RMXR+Out

C619

c=33p

SR01332

Page 14

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

APPLICATION CIRCUIT LNA

Impedance Match: Intrinsic return losses at the input and output ports are 7dB and 11dB, respectively. However, since long and narrow traces are always needed to fan out the pins, the user can adjust the traces’ dimensions so that only one shunt capacitor at the input is required to achieve excellent impedance match for both ports. If the user wants to skip the input matching network for simplicity, then roughly 0.7dB gain would be lost, although it benefits the system IP3.

Noise Match: The LNA1 and LNA2 can achieve 1.9dB and 2.0dB noise figure, respectively, when S11 = –11dB. Further improvement in S

will slightly decrease NF and increase S21.

Gain Control: The LNA1 can be switched to the attenuation mode, while LNA2 has three attenuation modes to choose from. When gain and loss modes from two LNAs are combined, there will be a total dynamic range of 59dB in the RF block; 3.0V operation is preferred to achieve better IP3 for both LNA1 and LNA2.

Temperature Compensation: Both LNAs have a built–in temperature compensation scheme to reduce the gain drift rate to 0.003dB/°C from –40°C to +85°C.

Supply Voltage Compensation: Unique circuitry provides gain stabilization over wide supply voltage range. The gain changes no more than 0.5dB when V

increases from 2.7V to 5.5V .

Mixer

Mixer Input Match: The mixer is configured for best gain, noise figure and spurious response. The user must supply an external, patented resonant balun to provide the differential drive as well as the impedance match (embedded in). Because the mixer consists of two single–balance mixers, whose inputs are connected in parallel instead of in series, the differential and common–mode impedances are equal.

Output Match: The mixer output circuit also features an external, patented resonant balun to optimize the conversion gain and noise figure. The principal IF operating frequency is 400 MHz.

LO Drive: The internal buffer only requires –15dBm from an external source. Furthermore, the transmitter incorporates an integrated SSB upconverter that consists of narrowband phase shifters at 1300MHz (LO side) and 400MHz (IF side), so the LO frequency is

recommended to be the receiver band plus 400MHz. Additionally, the LO leakage at the input of LNA1 is extremely low, which can greatly alleviate the LO re–radiation problem.

Outband Blocking: For optimum performance, passive R/C network is added at each input of the mixer. The resistors degenerate the noise conversion gain, while the capacitors preserve the gain and noise figure at RF frequencies.

Noise Figure and IP3: The resonant balun is superior to the conventional balun in terms of insertion loss, size and cost. As a result, the user can expect excellent SSB noise figure and gain which is 10dB and 8.5dB, respectively, at 400MHz IF. And the associated input IP3 is 2dBm typically. In the meantime, due to the internal LO buffer, the noise figure and IP3 are not sensitive to the LO levels. As discussed in the LNA Impedance Match session, a better system IP3 can be achieved (if necessary) through LNAs’ gain reduction.

Transmitter

The resonant balun is applied again to maximize the gain and output power, for a given bias current. Typical output power is 8.5dBm when the input level exceeds –25dBm.

LO Input

The LO input is used in Tx- and in Rx-mode. Only one synthesizer PLL is necessary to supply the LO input with

different frequencies in Tx and Rx timeslots. The LO input buffer should only be set in power-down mode

together with the PLL. As further buffering is included on chip there will be no influence on the PLL in active mode when the SA1620 Rxor Tx-path is power On or Off. Current consumption can thus be saved by powering on the Rx- and Tx-circuitry just before it is required, without disruption of the LO circuitry. LO input pins LO IN and LO INX may be used single-ended or symmetrically.

Table 5. GSM/DSC1800 Frequency Specification

(GSM 05.05, Version 4.2.0, April 1992) Mobile Stations Frequency Bands

GSM EGSM DCS1800 Unit

Tx 890 to 915 880.2 to 915 1710 to 1785 MHz Rx 935 to 960 925.2 to 960 1805 to 1880 MHz

1997 May 22

Page 15

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

Table 6. Measured Tx Output Frequency and Tx Mixer Products

IF=400MHz, symmetrical load at pins TxO, TxOX.

SPECTRAL LINE f=n*IF+m*LO MHz

No.

1 80 100 115 –3 1 –70 2 160 200 230 –6 2 –76 3 320 300 285 4 –1 –60 4 400 400 400 1 0 –46 IF 5 480 500 515 –2 1 –31 6 560 600 630 –5 2 –62 7 720 700 685 5 –1 –56 8 800 800 800 2 0 –37 Note 2

9 880 900 915 –1 1 0 Note 1 10 960 1000 1030 –4 2 –46 Note 3 11 1020 1100 1 185 6 –1 –63 12 1200 1200 1200 3 0 –60 13 1280 1300 1315 0 1 –32 LO 14 1360 1400 1430 –3 2 –46 15 1440 1500 1545 –6 3 –64 16 1600 1600 1600 4 0 –75 17 1680 1700 1715 1 1 –50 Notes 4 and 5 18 1760 1800 1830 –2 2 –34 Note 3 19 1840 1900 1945 –5 3 –68 Note 3 20 2000 2000 2000 5 0 –77 21 2080 2100 2115 2 1 –74 22 2160 2200 2230 –1 2 –67 23 2240 2300 2345 –4 3 –59 24 2400 2400 2400 6 0 –75 25 2480 2500 2515 3 1 –76 26 2560 2600 2630 0 2 –70 2LO

NOTES:

1. Desired Tx output frequency LO–IF corresponding to EGSM Tx band in Table 5.

2. (LO+IF)–(LO–IF) = 2 * IF

3. See Rx bands in Table 5.

4. LO+IF = mixer image frequency

5. See Tx bands in Table 5.

LO = LO = LO =

1280MHz 1300MHz 1315MHz

Order

n m min dBc typ dBc max dBc

RELATIVE POWER OF SPECTRAL

LINE

REMARKS

1997 May 22

Page 16

Philips Semiconductors Product specification

Frequency MHz

REMARKS

SA1620Low voltage GSM front-end transceiver

Table 7. Measured Tx Output Noise Floor

dBc/Hz

MIN TYP MAX

< 860 –135

860 to 880 –134

880.2 to 890 –133 EGSM TX extension 890 to 915 –133 GSM TX 915 to 925 –133

925.2 to 935 –134 EGSM RX extension 935 to 960 –135 GSM RX

960 to 1000 –135 1000 to 1710 –135 1710 to 1785 –146 DCS1800 TX 1785 to 1805 –145 1805 to 1880 –144 DCS1800 RX

1880 to 12750 –147

Adjacent Channel –130

1997 May 22

Page 17

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

4.5 4

3.5

Icc (mA)

2.5

-40° 25° 85°

Temp (°C)

Figure 5. LNA1_ICC vs. Temp

4.5 4

3.5

Icc (mA)

2.5

-40° 25° 85°

Temp (°C)

Figure 6. LNA_2 ICC vs. Temp

SR01334

SR01339

Icc (mA)

-40° 25° 85°

Temp (°C)

Figure 8. Receive ICC vs. Temp

9 8 7

Icc (mA)

6 5 4

-40° 25° 85°

Temp (°C)

Figure 9. Standby_ICC vs. Temp

SR01333

SR01338

70 65 60 55

Icc (mA)

50 45 40

-40° 25° 85°

Temp (°C)

Figure 7. Transmit_ICC vs. Temp

SR01344

28 26 24 22 20 18

Icc (mA)

16 14 12 10

-40° 25° 85°

Temp (°C)

Figure 10. Calibrate_ICC vs. Temp

SR01337

1997 May 22

Page 18

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

34 32 30 28 26

GAIN (dB)

24 22 20

-40° 25° 85°

Temp (°C)

Figure 11. Receive_Gain Mode1 vs. Temp

GAIN (dB)

-40° 25° 85°

Temp (°C)

Figure 12. Receive_Gain_Mode2 vs. Temp

SR01342

SR01335

-20

-22

-24

-26

-28

-30

GAIN (dB)

-32

-34

-36

-40° 25° 85°

Temp (°C)

Figure 14. Receive_Gain_Mode4 vs. Temp

-15

-16

-17

-18

-19

-20

-21

IP3 (dBm)

-22

-23

-24

-25

-40° 25° 85°

Temp (°C)

Figure 15. Receive IIP3 vs. Temp

SR01336

SR01343

-1

-2

-3

GAIN (dB)

-4

-5

-6

-40° 25° 85°

Temp (°C)

Figure 13. Receive_Gain_Mode3 vs. Temp

SR01341

1997 May 22

Page 19

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

2.0

1.9

1.8

NOISE FIGURE (dB)

1.7

1.6 –40 0 25 85

5.0V

2.7V

TEMPERATURE (°C)

3.0V

Figure 16. Receive LNA1 Noise Figure

2.50

2.30

5.0V

2.10

1.90

1.70

NOISE FIGURE (dB)

1.50 –40 0 25 85

TEMPERATURE (°C)

2.7V

5.5V

Figure 17. Receive LNA2 Noise Figure

5.5V

3.0V

SR00134

SR00137

10.80

10.40

2.7V

10.00

NOISE FIGURE (dB)

9.60

9.20 –40 0 25 85

3.0V

5.5V

TEMPERATURE (°C)

Figure 18. Receive Mixer Noise Figure

10.00

9.00

5.5V

8.00

POWER (dBm)

7.00

6.00 –40 0 25 85

2.7V

TEMPERATURE (°C)

3.0V

Figure 19. Transmit Power @ -25dBm

5.0V

SR00140

5.0V

SR00149

1997 May 22

12 11 10

9 8 7 6

POWER (dBm)

5 4

-40° 25° 85°

Temp (°C)

Figure 20. Transmit_Power @ –20 dBm Input

SR01345

Page 20

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

9.50

9.00

5.0V

8.50

POWER (dBm)

8.00

7.50

7.00 –40 0 25 85

TEMPERATURE (°C)

2.7V

5.5V

Figure 21. Transmit Power @ -15dBm

9.00

8.50

8.00

POWER (dBm)

5.5V

5.0V

2.7V

3.0V

SR00150

3.02

3.01

3.00

2.99

Vreg (Volts)

2.98

2.97 036912

15 18 21 24 27 30

FORCED CURRENT (mA)

Figure 24. Regulator 2 Load Regulation (V

3.01

3.00

2.99 0

Vreg (Volts)

2.98

2.97

2.96

–40

BATT

SR00153

= 3.5V)

–40

7.50

7.00 –25.00 –20.00 –15.00

INPUT POWER (dBm)

Figure 22. Transmit Power @ 25°C

–40

2.98

Vreg (Volts)

2.93

010203040

FORCED CURRENT (mA)

50 60 70 80 90 100

Figure 23. Regulator 1 Load Regulation (V

BATT

SR00151

SR00152

= 3.5V)

2.95

2.94

2.93

3.3 3.5 4.5 FORCED CURRENT (mA)

5.5 6.5 7.5

SR00154

Figure 25. Regulator 1 Line Regulation @ 100mA Load

3.01

3.00 0

2.99

2.98

Vreg (Volts)

2.97

2.96

3.3 3.5 4.5

5.5 6.5 7.5

FORCED CURRENT (mA)

–40

SR00155

Figure 26. Regulator 2 Line Regulation @ 30mA Load

1997 May 22

Page 21

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

12 10

8 6 4 2 0

-2

-4

TRANSMITTER POWER (dBm)

130

150

180

220

240

270

300

330

360

R546 (Ω)

430

VCC = 3V Temp = 25°C

510

560

620

750

820

910

SR00156

Figure 27. Transmit Output Power vs R(546) @ VCC = 3V

1000

100

90 80 70 60 50

CURRENT (mA)

40 30 20

130

150

180

220

240

270

300

330

360

R546 (Ω)

430

VCC = 3V Temp = 25°C

510

560

620

750

820

SR00157

910

Figure 28. Transmit Mode Current vs R(546) @ VCC = 3V

1000

1997 May 22

Page 22

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

PIN FUNCTIONS

No.

MNEMONIC

DC V EQUIVALENT CIRCUIT

No.

MNEMONIC

DC V EQUIVALENT CIRCUIT

1VCC3.0

2 IN2 0.8

3 GNDL2 0.0

4 GNDL2a 0.0

5 OUT2 2.2

CMOS INPUT

12 VCCBM 3.0

13 GND 0.0

POnRx

CMOS

—

INPUT

15 GND 0.0

16 Rxif 3.0

16 17

17 RxifX 3.0

—

18 GND 0.0

19 Txif 2.2

CMOS INPUT

8 INM 0.4

9 INMX 0.4

10 COMP2 2.2

11 COMP1 2.2

19 20

—

20 TxifX 2.2

21 GND 0.0

22 V

Tx 3.0

23 GND 0.0

24 VCCTx 3.0

25 GND 0.0

CON2

CMOS

—

INPUT

SR00162

Figure 29. Pin Functions

1997 May 22

Page 23

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

PIN FUNCTIONS (continued)

No.

MNEMONIC

DC V EQUIVALENT CIRCUIT

No.

MNEMONIC

DC V EQUIVALENT CIRCUIT

27 LOin 2.2

28 LOinX 2.2

CON1

CMOS INPUT

30 GndReg1 0.0

31 VReg2 3.0

32 VRegF2 3.0

27 28

—

BATT

GndReg2

—

POnBuf

CMOS INPUT

PDTx

CMOS INPUT

39 GndTx 0.0

40 TxOx 3.0

41 TxO 3.0

42 GndTx 0.0

43 RETx 0.4

40 41

—

–

33 VReg1 3.0

34 GndReg1 0.0

POn

CMOS

INPUT

36 V

BATT

3.0

GndReg2

BATT

—

GndReg1

44 IN1 0.8

45 GndL1 0.0

46 GndTx 0.0

—

47 OUT1 2.2

48 VCCL1 3.0

SR00163

Figure 29. Pin Functions (continued)

1997 May 22

Page 24

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm SOT313-2

1997 May 22

Page 25

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

NOTES

1997 May 22

Page 26

Philips Semiconductors Product specification

SA1620Low voltage GSM front-end transceiver

DEFINITIONS

Data Sheet Identification Product Status Definition

Objective Specification

Preliminary Specification

Product Specification

Formative or in Design

Preproduction Product

Full Production

Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

LIFE SUPPORT APPLICA TIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected

to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.

Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381

This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.

 Copyright Philips Electronics North America Corporation 1997

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1997 May 22