Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1494
DESCRIPTION ·
·With MT-200 package
·Complement to type 2SC3858
APPLICATIONS
·Audio and general purpose
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -17 A
IB Base current -5 A
Collector-base voltage Open emitter -200 V
Collector-emitter voltage Open base -200 V
Emitter-base voltage Open collector -6 V
℃)
PC Collectorl power dissipation TC=25℃ 200 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1494
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
hFE DC current gai n IC=-8A ; VCE=-4V 50 180
fT Transition frequency IC=-1A ; VCE=-12V 20 MHz
COB Output capacitance IE=0; VCB=-10V;f=1MHz 500 pF
Switching times
ton Turn-on time 0.60 μs
ts Storage time 0.90 μs
tf Fall time
Collector-emitter breakdown voltage IC=-50mA; IB=0 -200 V
Collector-emitter saturation voltage IC=-10 A;IB=-1 A -2.5 V
Collector cut-off current VCB=-200V; IE=0 -100 μA
Emitter cut-off current VEB=-6V; IC=0 -100 μA
IC=-10A;RL=4Ω
=-IB2=-1A
I
B1
V
=-40V
CC
0.20 μs
h
classifications
FE
Y P G
50-100 70-140 90-180
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1494
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1494
4
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