Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1492
DESCRIPTION
·With TO-3PN package
·Complement to type 2SC3856
APPLICATIONS
·Audio and general purpose
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -15 A
IB Base current -4 A
PC Collector power dissipation
Collector-base voltage Open emitter -180 V
Collector-emitter voltage Open base -180 V
Emitter-base voltage Open collector -6 V
℃)
T
=25℃
C
130 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1492
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
hFE DC current gai n IC=-3A ; VCE=-4V 50 180
COB Output capacitance IE=0 ; VCB=10V,f=1MHz 500 pF
fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz
Switching times
ton Turn-on time 0.60 μs
ts Storage time 0.90 μs
tf Fall time
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -180 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V
Collector cut-off current VCB=-180V; IE=0 -100 μA
Emitter cut-off current VEB=-6V; IC=0 -100 μA
IC=-10A;RL=4Ω
=- IB2=-1A
I
B1
V
=40V
CC
0.20 μs
hFE Classifications
O P Y
50-100 70-140 90-180
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1492
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1492
4
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