Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1386 2SA1386A
DESCRIPTION
·With TO-3PN package
·Complement to type 2SC3519/3519A
APPLICATIONS
·Audio and general purpose
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA1386 -160
V
CBO
V
CEO
V
EBO
IC Collector current -15 A
Collector-base voltage
2SA1386A
2SA1386 -160
Collector-emitter voltage
2SA1386A
Emitter-base voltage Open collector -5 V
Open emitter
Open base
V
-180
V
-180
IB Base current -4 A
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
130 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1386 2SA1386A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
hFE DC current gain IC=-5A ; VCE=-4V 50 180
Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 500 pF
fT Transition frequency IC=-2A ; VCE=-12V 40 MHz
Switching times
ton Turn-on time 0.30
ts Storage time 0.70
tf Fall time
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V
Collector cut-off
Current
Emitter cut-off current VEB=-5V; IC=0 -100
2SA1386 -160
IC=-25mA ;IB=0
2SA1386A
2SA1386 VCB=-160V; IE=0
2SA1386A VCB=-180V; IE=0
=-5A;RL=4Ω
I
C
=-IB2=-1A
I
B1
=40V
V
CC
-180
-100
0.20
V
μA
μA
μs
μs
μs
hFE Classifications
O P Y
50-100 70-140 90-180
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1386 2SA1386A
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1386 2SA1386A
4
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