Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1360
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SC3423
·High transition frequency
APPLICATIONS
·Audio frequency amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -50 mA
IB Base current -5 mA
PD Total power dissipation
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -5 V
℃)
Ta=25℃
T
=25℃
C
1.2
W
5
Tj Junction temperature 150
T
Storage temperature
stg
℃
-55～+150 ℃
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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1360
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter breakdown voltage IC=-1mA ;IB=0 -150 V
(BR)CEO
V
Collector-emitter saturation voltage IC=-10mA; IB=-1mA -1.0 V
CEsat
VBE Base-emitter on voltage IC=-10mA ; VCE=-5V -0.8 V
I
Collector cut-off current VCB=-150V; IE=0 -0.1 μA
CBO
I
Emitter cut-off current VEB=-5V; IC=0 -0.1 μA
EBO
hFE DC current gain IC=-10mA ; VCE=-5V 80 240
Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 2.5 pF
fT Transition frequency IC=-10mA ; VCE=-10V 200 MHz
hFE Classifications
O Y
80-160 120-240
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1360
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1360
4
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