Page 1
1
isc Silicon PNP Power Transistor 2SA1358
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-120
V
V
CEO
Collector-Emitter Voltage
-120
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-1
A
I
B
Base Current-Continuous
-0.1
A
P
C
Collector Power Dissipation
@ TC=25℃
10
W
Collector Power Dissipation
@ Ta=25℃
1.5
T
J
Junction Temperature
150℃T
stg
Storage Temperature Range
-55~150
℃
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
: V
·Complement to Type 2SC3421
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier applications.
(BR)CEO
= -120V(Min)
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
isc website： www.iscsemi.com isc & iscsemi is registered trademark
Page 2
2
isc Silicon PNP Power Transistor 2SA1358
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA ; IB= 0
-120
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
IE= -1mA ; IC= 0
-5
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
IC= -500mA; IB= -50mA
-1.0
V
V
BE(on)
Base-Emitter On Voltage
IC= -500mA ; VCE= -5V
-1.0
V
I
CBO
Collector Cutoff Current
VCB= -120V; IE= 0
-0.1
μA
I
EBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-0.1
μA
hFEDC Current Gain
IC= -0.1A ; VCE= -5V
80
240
f
T
Current-Gain—Bandwidth Product
IC= -0.1A ; VCE= -5V
120
MHz
C
OB
Output Capacitance
IE= 0; VCB= -10V, f
test
= 1MHz
30
pF
O
Y
80-160
120-240
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
hFEClassifications
isc website： www.iscsemi.com isc & iscsemi is registered trademark
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