Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1264N
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SC3181N
·2SA1264 with short pin
APPLICATIONS
·Power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -8 A
IB Base current -0.8 A
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -5 V
℃)
PT Total power dissipation TC=25℃ 80 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1264N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
h
Collector-emitter breakdown voltage IC=-50mA ,IB=0 -120 V
(BR)CEO
V
Collector-emitter saturation voltage IC=-6A; IB=-0.6A -2.0 V
CEsat
V
Base-emitter voltage IC=-4A ; VCE=-5V -1.5 V
BE
I
Collector cut-off current VCB=-120V; IE=0 -5 μA
CBO
I
Emitter cut-off current VEB=-5V; IC=0 -5 μA
EBO
h
DC current gain IC=-1A ; VCE=-5V 55 160
FE-1
h
DC current gain IC=-4A ; VCE=-5V 35
FE-2
fT Transition frequency IC=-1A ; VCE=-5V 30 MHz
Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz 420 pF
Classifications
FE-1
R O
55-110 80-160
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1264N
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1264N
4
Loading...