Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1249
DESCRIPTION
·With TO-126 package
·Complement to type 2SC3117
·High breakdown voltage
·Large current capacity
APPLICATIONS
·For color TV sound output,converters,
Inverters applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -1.5 A
ICM Collector current-Peak -2.5 A
PC Collector power dissipation
Collector-base voltage Open emitter -180 V
Collector-emitter voltage Open base -160 V
Emitter-base voltage Open collector -6 V
℃)
Ta=25℃
TC=25℃
1.0
W
10
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1249
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=-1mA; RBE=∞ -160 V
(BR)CEO
Collector-base breakdown voltage IC=-10μA; IE=0 -180 V
(BR)CBO
Emitter-base breakdown voltage IE=-10μA ; IC=0 -6 V
(BR)EBO
V
Collector-emitter saturation voltage IC=-500mA; IB=-50mA -0.2 -0.5 V
CEsat
V
Base-emitter saturation voltage IC=-500mA; IB=-50mA -0.85 -1.2 V
BEsat
I
Collector cut-off current VCB=-120V; IE=0 -1.0 μA
CBO
I
Emitter cut-off current VEB=-4V; IC=0 -1.0 μA
EBO
h
DC current gain IC=-100mA ; VCE=-5V 100 400
FE-1
h
DC current gain IC=-10mA ; VCE=-5V 90
FE-2
fT Transition frequency IC=-50mA ; VCE=-10V 120 MHz
Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 22 pF
h
Classifications
FE-1
R S T
100-200 140-280 200-400
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1249
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1249
4
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