Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1227 2SA1227A
DESCRIPTION ·
·With TO-3PFa package
·Complement to type 2SC2987/2987A
·High power dissipation
APPLICATIONS
·For use in audio frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -12 A
℃)
2SA1227 -140
Open emitter
2SA1227A
2SA1227 -140
Open base
2SA1227A
-160
-160
V
V
ICM Collector current-peak -20 A
T
PT Total power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
120 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1227 2SA1227A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -0.8 -1.5 V
CEsat
V
Base-emitter saturation voltage IC=-5A ;IB=-0.5A -1.5 -2.0 V
BEsat
I
Collector cut-off current VCB=-140V; IE=0 -50 μA
CBO
I
Emitter cut-off current VEB=-3V; IC=0 -50 μA
EBO
h
DC current gain IC=-2A ; VCE=-5V 60 320
FE-1
h
DC current gain IC=-5A ; VCE=-5V 40
FE -2
COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 280 pF
fT Transition frequency IC=-1A ; VCE=-5V 60 MHz
h
classifications
FE-1
R Q P
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1227 2SA1227A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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