Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1220 2SA1220A
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SC2690/2690A
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -1.2 A
ICM Collector current-peak -2.5 A
IB Base current -0.3 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -5 V
℃)
2SA1220 -120
Open emitter
2SA1220A
2SA1220 -120
Open base
2SA1220A
-160
-160
V
V
Ta=25℃
PD Total power dissipation
T
=25℃
C
Tj Junction temperature 150
T
Storage temperature
stg
1.2
W
20
℃
-55～+150 ℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1220 2SA1220A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=-1A; IB=-0.2A -0.7 V
CEsat
V
Base-emitter saturation voltage IC=-1A ;IB=-0.2A -1.3 V
BEsat
I
Collector cut-off current VCB=-120V; IE=0 -1
CBO
I
Emitter cut-off current VEB=-3V; IC=0 -1
EBO
h
DC current gain IC=-5mA ; VCE=-5V 35
FE-1
h
DC current gain IC=-0.3A ; VCE=-5V 60 320
FE-2
Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 26 pF
fT Transition frequency IC=-0.2A ; VCE=5V 175 MHz
h
Classifications
FE-2
μA
μA
R Q P
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1220 2SA1220A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1220 2SA1220A
4
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