
isc Silicon PNP Power Transistor 2SA1209
Collector-Emitter Voltage
Collector Current-Continuous
ICPCollector Current-Pulse
Collector Power Dissipation
@ TC=25℃
Collector Power Dissipation
@ Ta=25℃
Storage Temperature Range
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
·Good Linearity of h
·High Switching Speed
·Complement to Type 2SC2911
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-voltage switching and AF 100W predriver
applications.
(BR)CEO
= -160V(Min)
FE
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
isc website:www.iscsemi.com isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor 2SA1209
Collector-Emitter Saturation Voltage
Current-Gain—Bandwidth Product
COBCollector Output Capacitance
IE= 0; VCB= -10V; f= -1MHz
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
hFEClassifications
NOTICE
:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website:www.iscsemi.com isc & iscsemi is registered trademark