
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1111 2SA1112
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2591/2592
·Good linearity of h
·High V
CEO
APPLICATIONS
·For audio frequency, high power
amplifiers application
PINNING
PIN DESCRIPTION
FE
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -1 A
ICM Collector current-peak -1.5 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -5 V
℃)
2SA1111 -150
Open emitter
2SA1112
2SA1111 -150
Open base
2SA1112
-180
-180
V
V
PC Collector power dissipation TC=25℃ 20 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg

Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1111 2SA1112
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA1111 -150
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA1112
IC=-0.1mA ,IB=0
V
-180
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF
fT Transition frequency IC=50mA ; VCE=-10V 200 MHz
h
FE-1
Emitter-base breakdown voltage IE=-10μA ,IC=0 -5 V
Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.5 -2.0 V
Base-emitter saturation voltage IC=-0.5A; IB=-50mA -1.0 -2.0 V
Collector cut-off current VCB=-120V; IE=0 -1 μA
Emitter cut-off current VEB=-4V; IC=0 -1 μA
DC current gain IC=-150mA ; VCE=-10V 65 330
DC current gain IC=-500mA ; VCE=-5V 50
Classifications
P Q R S
65-110 90-155 130-220 185-330
2

Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1111 2SA1112
PACKAGE OUTLINE
3
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1111 2SA1112
4