Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1110
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SC2590
·Excellent current I
current transfer ratio h
·High transition frequency fT
·Optimum for the driver stage of a 40w to
60w output amplifier
APPLICATIONS
·For low-frequency power amplification
PINNING
characteristics of forward
C
vs. collector
FE
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute Maximun Ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -0.5 A
ICM Collector current-Peak -1.0 A
PC Collector power dissipation TC=25℃ 1.2* W
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Note) *: Without heat sink
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1110
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
h
FE-1
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=-0.3A ;IB=-30mA -1.0 V
Base-emitter saturation voltage IC=-0.3A ;IB=-30mA -1.2 V
DC current gain IC=-150mA ; VCE=-10V 65 330
=-100μA;IB=0
C
I
=-10μA ;IC=0
E
-120 V
-5 V
h
DC current gain IC=-0.5A ; VCE=-5V 50 100
FE-2
COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF
fT Transition frequency IC=-50mA ; VCB=-10V, 200 MHz
h
Classifications
FE-1
P Q R S
65-110 90-155 130-220 185-330
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1110
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1110
4
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