Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1104
DESCRIPTION
·With TO-3PN package
·High frequency
·High power dissipation
APPLICATIONS
·For use in audio and general
purpose applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -8 A
PC Collector power dissipation TC=25℃ 80 W
Tj Junction temperature 150 ℃
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -6 V
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1104
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=-3A ; VCE=4V 50 180
fT Transition frequency IE=1A ; VCE=-12V 20 MHz
Collector-emitter breakdown voltage IC=-25mA ;IB=0 -120 V
Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V
Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.8 V
Collector cut-off current VCB=-120V; IE=0 -100
Emitter cut-off current VEB=-6V; IC=0 -100
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SA1104
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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