Page 1
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY 〉
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
SA01, SA02, SA04, SA07
OUTLINE DRAWING
+0.5
15
0
2
2
1
1
2
3
4
5
345
3
0.5
1
1
4×3=12
1
5
24
3
MAIN THYRISTOR: ANODE
MAIN THYRISTOR: GATE
MAIN AND AUX. THYRISTOR: CATHODE
AUX. THYRISTOR: GATE
AUX. THYRISTOR: ANODE
SA SERIES
8 MAX
10 MAX
3
MIN
Dimensions
4 MAX
1
0.5
in mm
APPLICATION
Automatic strobe flasher
FAMILY CONSTITUTION
Guide No.
(ASA100)
25
32
25
Type
SA01
SA02
SA04
SA07
MAXIMUM RATINGS (Ta= –20 ~ +60°C, unless otherwise noted)
Symbol
✽1
DRM
V
VDSM
VRRM
I
FGM
Topr
Tstg
✽1.Connect 1kΩ resistor between gate to cathode.
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Pulse current ability
–
Peak gate forward current
Operating ambient temperature
Storage temperature
Parameter
Commutating characteristics
M=700µF, ITM=200A,
C
C
C=2.2µF
C
M=1000µF, ITM=230A,
C
C=2.5µF
C
M=700µF, ITM=200A,
C
C=1.4µF
Main
480
0.5
High sensitive I
High holding current I
High holding current I
High sensitive I
SA01
Aux
600 480 600 480 600 450 600
0.3 0.5 1.0 1.0 0.5 0.31.0
Aux thyristor
GT ≤=250µA
H ≥ 25mA
H ≥ 25mA
GT ≤ 250µA
SA02 SA04 SA07
Main Aux
See electrical characteristics
Main Aux
400
400
–20 ~ +60
–40 ~ +125
Compact strobe
Middle class strobe
Built-in strobe
Application
Main Aux
Unit
V
V
V
A
A
°C
°C
Feb.1999
Page 2
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY〉
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
Symbol
DRM
I
IRRM
IGT
VGT
IH
✽1.Connect 1kΩ resistor between gate to cathode.
✽2.Minimum value
Repetitive peak off-state current
Repetitive peak reverse current
Gate trigger current
Gate trigger voltage
Holding current
Parameter
✽1
✽2
SR1FM
Main
100
100
30
1.5
—
SA01
Aux
20
20
0.25
1.0
1.0
SA02 SA04 SA07
Main
100
100
30
1.5
—
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
Aux
100
100
1.5
Main
100
100
30
25
50
2.0
—
Aux
100
100
1.5
Main
100
100
30
25
80
1.5
—
Aux
20
20
0.25
1.0
1.0
Unit
µA
µA
mA
V
mA
L
22k
47nC
υ trg
V
CM
+
C
M
−
10
10k
47n
C
i1 i5
15
SAOX
2
4
3
1k
iG
10n
470470
Fig. 1 Test circuit
υ trg
0
iG
0
i1
IP
iG
0
tw
t
t
t
i5
0
t
Fig. 2 The voltage and current waveforms
SA120
123452
15
AUX THYRISTORMAIN THYRISTOR
42
3
Fig. 3 Pin position and Equivalent circuit
Feb.1999
Page 3
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY〉
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
COMMUTATION CHARACTERISTICS IN STROBE APPLICATION
SA series commutates at arbitrary conducting duration tw under following condition. (See Fig. 1, 2)
Please confer following sheets in case that C
COMMUTATING CHARACTERISTICS (Ta=25°C, Single pulse operation)
Symbol
V
CM
CM
ITM
L
C
C
Main capacitor charging voltage
Main capacitor
Peak on-state current
Anode reactor
Commutating capacitor
Parameter
NOTICE
Please consider counterplans against induced noise across common impedance. (between common cathode 3 and the ground point of trigger
cicuit for the auxiliary thyristor)
M or ITM is different from mentioned value. (See shown under)
SA01 SA02 SA04
350
700
200
2.2
1000
230
25
2.5
SA07
700
200
1.4
Unit
V
µF
A
µH
µF
PERFORMANCE CURVES
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
3
10
7
100 (%)
5
4
)
)
t°C
25°C
=
=
j
j
T
T
(
(
10
10
GATE TRIGGER CURRENT
GATE TRIGGER CURRENT
MAIN THYRISTOR
3
2
2
7
SA02,04
5
AUX THYRISTOR
4
3
2
1
–20 0 20
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
SA01,07
AUX THYRISTOR
10 30 50 70–10
40 60 80
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
0.6
100 (%)
0.5
0.4
)
)
0.3
t°C
=
j
T
(
25°C
=
j
0.2
T
(
0.1
AUX THYRISTOR
0
MAIN THYRISTOR
–0.1
–0.2
–0.3
–0.4
GATE TRIGGER VOLTAGE
GATE TRIGGER VOLTAGE
0 1020 40506070
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
8030–10–20
Feb.1999
Page 4
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY〉
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
3
10
7
100 (%)
5
4
)
3
)
= t°C
= 25 °C
j
j
T
T
(
(
SA01,07 AUX THYRISTOR
2
2
10
7
SA02,04 AUX THYRISTOR
5
4
3
2
HOLDING CURRENT
HOLDING CURRENT
1
10
–20 0 20
–10 10 30 50 70
JUNCTION TEMPERATURE (°C)
COMMUTATING CHARACTERISTICS
1000
800
600
400
MAIN CAPACITOR (µF)
200
V
CM
= 350V Ta = 25°C
L = 25µH SEE FIG.1
0
140 160 180 200
TYPICAL EXAMPLE
(SA01,SA02)
F
F
µ
µ
= 1.8
= 1.7
C
C
C
C
40 60 80
F
F
µ
= 2.0
C
C
F
µ
= 2.1
C
C
µ
= 1.9
C
C
F
µ
= 2.2
C
C
F
µ
= 2.3
C
C
220120
GATE TRIGGER CURRENT VS.
GATE TRIGGER PULSE WIDTH
4
10
7
5
100 (%)
3
2
)
)
3
10
tw
DC
(
(
7
MAIN
5
THYRISTOR
3
2
2
10
7
5
SA02,04 AUX THYRISTOR
3
2
GATE TRIGGER CURRENT
GATE TRIGGER CURRENT
1
10
0
SA01,07 AUX THYRISTOR
2310
5710123 5710223 5710
GATE TRIGGER PULSE WIDTH (µs)
COMMUTATING CHARACTERISTICS
1400
1200
1000
800
F
F
µ
µ
MAIN CAPACITOR (µF)
600
400
= 2.0
= 1.8
C
C
C
C
180 200 220 240
TYPICAL EXAMPLE
(SA04)
V
CM
= 350V
L = 25µH
T
a
= 25°C
SEE FIG.1
F
F
µ
= 2.2
C
C
µ
= 2.4
C
C
F
µ
= 2.6
C
C
F
µ
= 2.8
C
C
260160
3
PEAK ON-STATE CURRENT (A)
COMMUTATING CHARACTERISTICS
(SA07)
1000
800
600
F
F
F
µ
= 1.0
C
C
F
µ
= 1.1
C
C
µ
400
MAIN CAPACITOR (µF)
200
0
µ
= 0.8
= 0.9
C
C
C
C
140 160 180 200
PEAK ON-STATE CURRENT (A)
F
µ
= 1.2
C
C
F
µ
= 1.3
C
C
F
µ
= 1.4
C
C
F
µ
= 1.5
C
C
220120
PEAK ON-STATE CURRENT (A)
COMMUTATING CAPACITOR VS.
AMBIENT TEMPERATURE
100 (%)
)
)
1.8
1.7
1.6
TYPICAL EXAMPLE
1.5
Ta = 25°C
Ta = t°C
1.4
(
(
1.3
1.2
1.1
1.0
0.9
0.8
COMMUTATING CAPACITOR
COMMUTATING CAPACITOR
20 30 40 60 70 80 90
AMBIENT TEMPERATURE (°C)
10050100
Feb.1999
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