Datasheet S952T, S952TR, S952TRW Datasheet (VISHAY)

S952T/S952TR/S952TRW

Vishay Telefunken

MOSMIC for TV–Tuner Prestage with 9 V Supply
Voltage

MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device.

Observe precautions for handling.

Applications

Low noise gain controlled input stages in UHF-and
VHF- tuner with 9 V supply voltage.

Features

D

Easy Gate 1 switch-off with PNP switching tran­sistors inside PLL

D

High AGC-range with less steep slope

D

Integrated gate protection diodes

C block

AGC

RF in

C block

D

Low noise figure

D

High gain

D

Improved cross modulation at gain reduction

D

SMD package

G2

G1

S

RFC

D

C block

V

DD

RF out

94 9296

21

94 9279

13 579

43

S952T Marking: 952
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

2

1

13 56613 654

34

S952TRW Marking: W95
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

21

94 9278

95 10831

43

S952TR Marking: 52R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

Document Number 85062
Rev. 3, 20-Jan-99

www.vishay.de • FaxBack [phone]

1 (6)

S952T/S952TR/S952TRW

Vishay Telefunken

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Gate 1/Gate 2 - source voltage ±V
Total power dissipation T

≤ 60 °C P

amb

Channel temperature T
Storage temperature range T

DS

D

G1/G2SM

G1/G2SM

tot
Ch
stg

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter T est Conditions Symbol Value Unit

Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35mm Cu

3

R

thChA

12 V
30 mA
10 mA

6 V
200 mW
150

–55 to +150

450 K/W

°

C

°

C

Electrical DC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Drain - source

±I

G1S

= 10 mA, V

G2S

= V

= 0 ±V

G1S

(BR)DSS

15 V

breakdown voltage
Gate 1 - source

±I

G1S

= 10 mA, V

= VDS = 0 ±V

G2S

(BR)G1SS

7 10 V

breakdown voltage
Gate 2 - source

±I

G2S

= 10 mA, V

= VDS = 0 ±V

G1S

(BR)G2SS

7 10 V

breakdown voltage
Gate 1 - source

+V

G1S

= 5 V, V

= VDS = 0 +I

G2S

G1SS

leakage current
Gate 2 - source

±V

= 5 V, V

G2S

= VDS = 0 ±I

G1S

G2SS

leakage current
Drain - source

VDS = V

RG1

= 9 V, V

= 4 V, RG1 = 390 k

G2S

W

I

DSO

7 10 14 mA

operating current
Gate 1 - source

VDS = V

RG1

= 9 V, V

= 4 V, ID = 100 mA V

G2S

G1S(OFF)

0.4 1.2 V

cut-off voltage
Gate 2 - source

VDS = V

= 9 V, RG1 = 390 kW, ID = 100 mA V

RG1

G2S(OFF)

1.0 V

cut-off voltage

Remark on improving intermodulation behavior:

By setting RG1 = 300 kW instead of 390 kW, typical value of I
modulation behavior will be performed.

will raise up to about 15 mA and improved inter-

DSO

20 nA

20 nA

www.vishay.de • FaxBack [phone]
2 (6)

Document Number 85062

Rev. 3, 20-Jan-99

Electrical AC Characteristics

g

g

S952T/S952TR/S952TRW

Vishay Telefunken

VDS = 9 V, V

= 4 V, ID = 10 mA, f = 1 MHz , T

G2S

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G

GS = 3,3 mS, GL = 1 mS, f = 800 MHz G

AGC range VDS = 9 V, V

= 1 to 4 V, f = 800 MHz

G2S

 20 24 28 mS

21s

2.1 2.5 pF
20 fF

0.9 pF
26 dB

40 dB

D

issg1

rss

oss

ps
ps

G

ps

16.5 20 dB

Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1 dB

GS = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.3 dB

Document Number 85062
Rev. 3, 20-Jan-99

www.vishay.de • FaxBack [phone]

3 (6)

S952T/S952TR/S952TRW

Vishay Telefunken

Dimensions of S952T in mm

Dimensions of S952TR in mm

96 12240

www.vishay.de • FaxBack [phone]
4 (6)

96 12239

Document Number 85062

Rev. 3, 20-Jan-99

Dimensions of S952TRW in mm

S952T/S952TR/S952TRW

Vishay Telefunken

96 12238

Document Number 85062
Rev. 3, 20-Jan-99

www.vishay.de • FaxBack [phone]

5 (6)

S952T/S952TR/S952TRW

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

www.vishay.de • FaxBack [phone]
6 (6)

Document Number 85062

Rev. 3, 20-Jan-99