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S9013T
˄
˅
NPN Epitaxial Silicon Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURE
Power dissipation
P
Collector current
I
Collector-base voltage
V
Operating and storage junction temperature range
ELECTRICAL CHARACTERISTICS
Parameter
CM : 0.625 W Tamb=2 5 C
CM: 0.5 A
: 40 V
(BR)CBO
stg: -55 to
Tj, T
+150 C
Tamb=25ć unless otherwise specified
Symbol Test conditions MIN TYP MAX UNIT
46
0.
(1.27 Typ.)
4.55±0.2
+0. 1
–0.1
132
2.54
TO-92
4.5±0.2
±0. 2
14.3
1.25
±0. 1
0.43
+0.2
–0.2
+0. 08
–0.07
3.5
±0. 2
1: Emitter
2: Base
3: Collector
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
CLASSIFICATION OF h
FE(1)
V(BR)
V(BR)
V(BR)
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
Ic= 100A ˈ IE=0
CBO
IC= 1 mA , IB=0 25 V
CEO
IE= 100Aˈ IC=0
EBO
VCB= 40V , IE=0 0.1
VCE=20V , IE=0 0.1
VEB= 5V, IC=0 0.1
VCE=1V, IC=50mA 64 300
VCE=1V, IC= 500mA 40
IC= 500 mA, IB= 50mA 0.6 V
IC= 500 mA, IB= 50mA 1.2 V
VCE=6V,IC=20mA,
f
T
f=30MHz
40 V
5 V
150 MHz
A
A
A
Rank
Range
01-Jun-2002 Rev. A
D E F G H I
64-91 78-112 96-135 112-166 144-202 190-300
Any changing of specification will not be informed individual
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S9013T
Elektronische Bauelemente
Typical Characteristics
20
18
16
14
12
10
8
6
4
[mA], COLLECTOR CURRENT
C
I
2
0
0 1020304050
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
IB = 160μA
IB = 140μA
IB = 120μA
IB = 100μA
IB = 80μA
IB = 60μA
IB = 40μA
IB = 20μA
NPN Epitaxial Silicon Transistor
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000 10000
IC [mA], COLLECTOR CURRENT
VCE = 1V
10000
1000
VBE (sat)
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
V
10
1 10 100 1000 10000
VCE (sat)
IC = 10 I
IC [mA], COL L ECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
B
1000
100
10
1
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
1 10 100 1000 10000
IC [mA], COLLECTOR CURRENT
VCE = 6V
Figure 4. Current Gain Bandwidth Product
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2
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