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S9012T
˄
˅
PNP Epitaxial Silicon Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURE
Power dissipation
P
Collector current
I
Collector-base voltage
V
Operating and storage junction temperature range
Tj, T
ELECTRICAL CHARACTERISTICS
Parameter
: 0.625 W Tamb=25
CM
-0.5 A
CM:
(BR)CBO : -40 V
stg: -55 to +150
Tamb=25ć unless otherwise specified
Symbol Test conditions MIN TYP MAX UNIT
46
0.
(1.27 Typ.)
4.55±0.2
+0. 1
–0.1
132
2.54
1.25
±0. 1
TO-92
4.5±0.2
±0. 2
14.3
0.43
+0.2
–0.2
+0. 08
–0.07
3.5
±0. 2
1: Emitter
2: Base
3: Collector
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)
V(BR)
V(BR)
I
CBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
Ic= -100A ˈ IE=0
CBO
IC= -1 mA , IB=0 -25 V
CEO
IE= -100Aˈ IC=0
EBO
VCB=- 40V , IE=0 -0.1
VCB=-20V , IE=0 -0.1
VEB=- 5V, IC=0 -0.1
VCE=-1V, IC=-50mA 64 300
VCE=-1V, IC= -500mA 40
IC= -500 mA, IB= -50mA -0.6 V
IC= -500 mA, IB=- 50mA -1.2 V
VCE=-6V,IC=-20mA,
f
T
f=30MHz
-40 V
-5 V
150 MHz
A
A
A
CLASSIFICATION OF h
Rank
Range
01-Jun-2002 Rev. A
FE(1)
D E F G H I
64-91 78-112 96-135 112-166 144-202 190-300
Any changing of specification will not be informed individual
Page 1 of 2
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S9012T
Elektronische Bauelemente
Typical Characteristics
-50
-40
-30
-20
-10
[mA], COLLECTOR CURRENT
C
I
-0
-0 -10 -20 -30 -40 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
IB=-300μA
IB=-250μA
IB=-200μA
IB=-150μA
IB=-100μA
IB=-50μA
PNP Epitaxial Silicon Transistor
1000
100
, DC CURRENT GAIN
FE
h
10
-10 -100 -1000
IC[mA], COLLECTOR CURRENT
VCE = -1V
-1000
VBE(sat)
-100
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
-10
BE
V
-10 -100 -1000
IC[mA], COLLECTOR CURRENT
VCE(sat)
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC=10I
1000
100
10
B
1
-1 -10 -100 -1000 -10000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE=-6V
Figure 4. Current Gain Bandwidth Product
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2
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