Page 1
FEATURES
z Excellent h
Elektronische Bauelemente
A suffix of “-C” specifies halogen and lead free
linearity
FE
RoHS Compliant Product
S8550T
PNP Silicon
General Purpose Transistor
TO-92
4.55
0.2
0.2
4.5
0.2
3.5
(1.27 Typ.)
132
2.54
1.25
0.1
0.2
0.46
0.2
14.3
0.08
0.43
0.1
0.07
1: Emitter
2: Base
3: Collector
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Currrent IC -500
Total Power Dissipation PD 625 mW
Junction, Storage Temperature TJ, T
-40 V
CBO
-25 V
CEO
-5 V
EBO
mA
+150, -55 ~ +150 ℃
STG
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
AMB
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-base Breakdown Voltage V
Collector-emitter Breakdown Voltage V
Emitter-base Breakdown Voltage V
Collector Cut-off Current I
-40 - - V IC = -100 μA, IE = 0
(BR)CBO
-25 - - V IC = -1 mA, IB = 0
(BR)CEO
-5 - - V IE = -100 μA, IC = 0
(BR)EBO
- - -0.1
CBO
μA
V
CB
= -40 V, I
E
= 0
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
Collector-emitter Saturation Voltage V
Base-emitter Saturation Voltage V
Transition Frequency f T 150 - - MHz V
- - -0.1
CEO
- - -0.1
EBO
h
85 - 400 V
FE(1)
50 - - V
h
FE(2)
- - -0.6 V IC = -500 mA, IB = -50 mA
CE(sat)
- - -1.2 V IC = -500 mA, IB = -50 mA
BE(sat)
μA
μA
V
= -20 V, IB = 0
CE
V
= -3 V, IC = 0
EB
= -1 V, IC = -50 mA
CE
= -1 V, IC = -500 mA
CE
= -6 V, IC= -20 mA, f = 30 MHz
CE
CLASSIFICATION OF hFE
Rank B C D D3
Range 85 - 160 120 - 200 160 - 300 300 - 400
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-June-2007 Rev. C Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
S8550T
General Purpose Transistor
PNP Silicon
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-June-2007 Rev. C Page 2 of 2
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