Page 1
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Features
D
Low supply voltage
D
Low current consumption
D
50 W input impedance at 945 MHz
D
Low noise figure
D
High power gain
S852T/S852TW
Vishay Telefunken
1
94 9280
23
S852T Marking: 852
13 581
1
13 652
2
S852TW Marking: W52
3
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 125 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
13 570
12 V
6 V
2 V
8 mA
30 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85052
Rev. 3, 20-Jan-99
3
R
thJA
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450 K/W
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Page 2
S852T/S852TW
qy
g
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 12 V, VBE = 0 I
Collector-base cut-off current VCB = 8 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA V
DC forward current transfer ratio VCE = 3 V, IC = 1 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 3 V, IC = 1 mA, f = 500 MHz f
VCE = 2 V, IC = 1.5 mA, f = 500 MHz f
Collector-base capacitance VCB = 1 V, f = 1 MHz C
Noise figure ZS = Z
IC = 0.5 mA
ZS = Z
IC = 1 mA
ZS = Z
I
= 1.5 mA
C
Power gain VCE = 2 V, IC = 0.5 mA, f = 450MHz Gpe @F
VCE = 3 V, IC = 1 mA, f = 945 MHz Gpe @F
VCE = 2 V, IC = 1.5 mA, f = 945 MHz Gpe @F
Collector current for fT max VCE = 2 V, f = 500 MHz I
Real part of input VCE = 3 V, IC = 1 mA, f = 945 MHz Re
impedance
VCE = 2 V, IC = 1.5 mA, f = 945 MHz Re
, f = 450 MHz, VCE = 2 V,
Sopt
, f = 945 MHz, VCE = 3 V,
Sopt
, f = 945 MHz, VCE = 2 V,
Sopt
(BR)CEO
CEsat
F
opt
F
opt
F
opt
C
(h11e)
(h11e)
CES
CBO
EBO
FE
T
T
cb
6 V
0.1 0.4 V
40 90 150
4.7 GHz
5.2 GHz
0.25 pF
1.1 dB
1.8 dB
opt
opt
opt
11.5 dB
10.5 dB
12 dB
50
50
100mA
100 nA
1
m
2 dB
3 mA
W
W
A
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Document Number 85052
Rev. 3, 20-Jan-99
Page 3
Common Emitter S–Parameters
2
S852T/S852TW
Vishay Telefunken
Z0 = 50 W,T
VCE/V IC/mA f/MHz
= 25_C, unless otherwise specified
amb
0.5 700 0.881 –25.8 1.58 142.2 0.093 69.0 0.935 –13.9
1000 0.818 –35.4 1.50 129.4 0.121 63.5 0.898 –18.6
1100 0.793 –38.8 1.49 125.1 0.130 61.8 0.884 –19.7
1200 0.772 –41.5 1.46 121.3 0.138 60.4 0.873 –21.3
1300 0.746 –45.1 1.44 117.2 0.148 58.6 0.859 –22.6
1.5 700 0.662 –40.3 3.55 125.3 0.085 63.6 0.820 –17.8
1000 0.540 –50.0 2.98 110.7 0.106 60.3 0.756 –20.3
1100 0.502 –52.4 2.82 106.5 0.113 59.5 0.740 –20.8
1200 0.470 –54.8 2.69 102.8 0.118 59.3 0.724 –21.4
1300 0.439 –57.6 2.56 99.0 0.123 58.7 0.710 –21.7
S11 S21 S12 S22
LIN
MAG
100 9.976 –3.8 1.71 174.9 0.015 86.8 0.998 –2.3
200 0.969 –7.9 1.71 168.9 0.029 83.4 0.993 –4.7
300 0.955 –11.7 1.70 163.3 0.044 80.0 0.984 –6.7
400 0.939 –15.5 1.68 157.7 0.058 76.8 0.974 –8.7
500 0.920 –18.9 1.64 151.9 0.070 73.6 0.959 –10.6
600 0.901 –22.4 1.62 147.2 0.082 71.5 0.948 –12.4
800 0.861 –28.9 1.56 137.6 0.104 66.7 0.922 –15.5
900 0.838 –32.3 1.53 133.1 0.114 65.0 0.909 –17.2
100 0.972 –7.5 4.84 170.9 0.016 84.8 0.990 –3.9
200 0.898 –14.5 4.69 161.7 0.031 79.8 0.972 –7.4
300 0.858 –21.0 4.49 153.1 0.045 75.1 0.944 –10.6
400 0.811 –27.0 4.27 145.1 0.057 71.5 0.913 –13.1
500 0.762 –32.2 4.01 137.8 0.067 68.3 0.880 –15.3
600 0.710 –36.8 3.77 131.3 0.077 65.9 0.849 –16.8
800 0.617 –43.8 3.33 120.0 0.093 62.1 0.796 –18.7
900 0.576 –46.9 3.15 115.1 0.099 61.2 0.775 –19.5
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
Document Number 85052
Rev. 3, 20-Jan-99
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Page 4
S852T/S852TW
Vishay Telefunken
Typical Characteristics (T
50
40
30
20
10
tot
P – Total Power Dissipation ( mW )
0
0 25 50 75 100 125 150
T
– Ambient Temperature ( °C )13619
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
7000
6000
5000
f=500MHz
= 25_C unless otherwise specified)
amb
0.5
0.4
0.3
0.2
0.1
cb
C – Collector Base Capacitance ( pF )
0
012345
VCB – Collector Base Voltage ( V )13622
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3V
2V
4000
3000
2000
1000
T
f – Transition Frequency ( MHz )
0
012345
IC – Collector Current ( mA )13620
VCE=1V
Figure 2. Transition Frequency vs. Collector Current
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Document Number 85052
Rev. 3, 20-Jan-99
Page 5
S852T/S852TW
Vishay Telefunken
VCE = 2 V, IC = 1.5 mA , Z0 = 50
S
11
j
S
21
j0.5
j0.2
0
–j0.2
13 562
0.2
–j0.5
0.5
1
1300MHz
–j
Figure 4. Input reflection coefficient
2
900
j2
5
500
–j2
–j5
j5
100
W
S
12
90°
120°
150° 30°
1
180°
–150°
–120° –60°
13 563
500
100
–90°
1300MHz
900
0.04 0.08
0°
–30°
Figure 6. Reverse transmission coefficient
S
22
90°
120°
900
1300MHz
2 4
–90°
180°
150°
100
–150°
13 564
500
–120° –60°
Figure 5. Forward transmission coefficient
60°
30°
–30°
j
j0.5
j0.2
0°
0
–j0.2
13 565
0.2
–j0.5
0.5
1
1300MHz
–j
j2
j5
2
5
–j2
100
1
–j5
Figure 7. Output reflection coefficient
Document Number 85052
Rev. 3, 20-Jan-99
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Page 6
S852T/S852TW
Vishay Telefunken
Dimensions of S852T in mm
95 11346
Dimensions of S852TW in mm
96 12236
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Document Number 85052
Rev. 3, 20-Jan-99
Page 7
S852T/S852TW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85052
Rev. 3, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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