Datasheet S-8229AAA-M6T1U, S-8229AAB-M6T1U, S-8229AAC-M6T1U, S-8229AAF-I6T1U Datasheet (SII) [ru]
Page 1
S-8229 Series
www.sii-ic.com BATTERY MONITORING IC
© SII Semiconductor Corporation, 2012-2015 Rev.1.0_02
The S-8229 Series is a battery monitoring IC developed using CMOS technology. Compared with conventional CMOS
voltage detectors, the S-8229 Series is ideal for the applications that require high-withstand voltage due to its maximum
operation voltage as high as 24 V.
The S-8229 Series is capable of confirming the voltage in stages since it detects three voltage values.
Features
• Detection voltage accuracy: ±1.0%
• Hysteresis characteristics: V
• Current consumption: During operation: I
I
During power-off: I
• Operation voltage range: V
• Detection voltage: −V
• Output form: Nch open-drain output
• Output logic*2: Full charge all on, full charge all off
• Operation temperature range: Ta = −40°C to +85°C
• Lead-free (Sn 100%), halogen-free
*1. −V
−V
: Total detection voltage
DETtotal
= −V
DETtotal
DET1(S)
+ −V
DET2(S)
+ −V
DET3(S)
*2. Full charge all on: When the input voltage is equal to or higher than each of the three detection voltage values,
V
OUT1
= V
OUT2
= V
OUT3
Full charge all off: When the input voltage is equal to or higher than each of the three detection voltage values,
V
OUT1
= V
OUT2
= V
OUT3
Application
to V
HYS1
DD
HYS3
= 3.6 V to 24 V
to −V
DET1(S)
= VSS.
= "High-Z".
= 0 mV, 50 mV, 300 mV, 400 mV, 500 mV
= 9.0 μA max. (−V
DD1
= 11.0 μA max. (−V
DD1
= 0.1 μA max.
DD2
= 10.5 V to 21.5 V (0.1 V step)
DET3(S)
DETtotal
DETtotal
*1
≥ 42 V)
*1
< 42 V)
• Rechargeable lithium-ion battery pack
Packages
• SOT-23-6
• SNT-6A
1
Page 2
BATTERY MONITORING IC
S-8229 Series Rev.1.0_02
Block Diagram
VDD
ON / OFF
VSS
+
−
V
REF
Remark Diodes in the figure are parasitic diodes.
Figure 1
OUT1
Nch 1
OUT2
+
−
+
Nch 2
Nch 3
OUT3
−
2
Page 3
BATTERY MONITORING IC
Rev.1.0_02 S-8229 Series
Product Name Structure
1. Product name
S-8229 xxx - xxxx U
Environmental code
U: Lead-free (Sn 100%), halogen-free
*1. Refer to the tape drawing.
*2. Refer to "3. Product name list".
2. Packages
Package abbreviation and IC packing specifications
M6T1: SOT-23-6, Tape
I6T1: SNT-6A, Tape
Serial code
*2
Sequentially set from AAA to AZZ
Table 1 Package Drawing Codes
*1
Package Name Dimension Tape Reel Land
SOT-23-6 MP006-A-P-SD MP006-A-C-SD MP006-A-R-SD −
SNT-6A PG006-A-P-SD PG006-A-C-SD PG006-A-R-SD PG006-A-L-SD
3. Product name list
3. 1 SOT-23-6
Product Name
S-8229AAA-M6T1U 19.400 V 18.100 V 15.300 V 0 V 0 V 0 V Full charge all on
S-8229AAB-M6T1U 19.400 V 18.100 V 15.300 V 0.500 V 0.500 V 0.500 V Full charge all on
S-8229AAC-M6T1U 19.500 V 18.000 V 15.500 V 0.050 V 0.050 V 0.050 V Full charge all on
*1. Full charge all on: When the input voltage is equal to or higher than each of the three detection voltage
Full charge all off: When the input voltage is equal to or higher than each of the three detection voltage
Remark Please contact our sales office for products other than the above.
3. 2 SNT-6A
Detection
Voltage 1
[−V
DET1(S)
values, V
values, V
Detection
Voltage 2
[−V
]
OUT1
OUT1
DET2(S)
= V
= V
]
OUT2
OUT2
Table 2
Detection
Voltage 3
[−V
DET3(S)
= V
OUT3
= V
OUT3
Table 3
Hysteresis
Width 1
[V
]
HYS1(S)
= VSS.
= "High-Z".
Hysteresis
Width 2
[V
]
HYS2(S)
Hysteresis
Width 3
[V
]
HYS3(S)
Output Logic
]
*1
Product Name
Detection
Voltage 1
[−V
DET1(S)
Detection
Voltage 2
[−V
]
DET2(S)
Detection
Voltage 3
[−V
]
DET3(S)
Hysteresis
Width 1
[V
]
HYS1(S)
Hysteresis
Width 2
[V
]
HYS2(S)
Hysteresis
Width 3
[V
]
HYS3(S)
Output Logic*1
]
S-8229AAF-I6T1U 18.000 V 15.000 V 21.500 V 0.050 V 0.050 V 0.050 V Full charge all on
*1. Full charge all on: When the input voltage is equal to or higher than each of the three detection voltage
values, V
OUT1
= V
OUT2
= V
OUT3
= VSS.
Full charge all off: When the input voltage is equal to or higher than each of the three detection voltage
values, V
OUT1
= V
OUT2
= V
= "High-Z".
OUT3
Remark Please contact our sales office for products other than the above.
3
Page 4
BATTERY MONITORING IC
S-8229 Series Rev.1.0_02
Pin Configurations
1. SOT-23-6
2. SNT-6A
Top view
546
132
Figure 2
Top view
1
2
3
Figure 3
Pin No. Symbol Description
1 OUT1 Voltage detection output pin 1
2 OUT2 Voltage detection output pin 2
3 OUT3 Voltage detection output pin 3
6
5
4
4 VSS GND pin
5 VDD Voltage input pin
6 ON / OFF ON / OFF pin
Pin No. Symbol Description
1 OUT3 Voltage detection output pin 3
2 OUT2 Voltage detection output pin 2
3 OUT1 Voltage detection output pin 1
4 ON / OFF ON / OFF pin
5 VDD Voltage input pin
6 VSS GND pin
Table 4
Table 5
4
Page 5
BATTERY MONITORING IC
Rev.1.0_02 S-8229 Series
Absolute Maximum Ratings
Table 6
(Ta = +25°C unless otherwise specified)
Item Symbol Absolute Maximum Rating Unit
V
V
Input voltage
Output voltage n V
Power dissipation
SOT-23-6
SNT-6A
Operation ambient temperature T
Storage temperature T
DD
V
V
ON / OFF
V
OUTn
PD
−40 to +85 °C
opr
−40 to +125 °C
stg
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
800
SOT-23-6
− 0.3 to VSS + 26 V
SS
− 0.3 to VSS + 26 V
SS
− 0.3 to VSS + 26 V
SS
650*1
*1
400
mW
mW
Remark n = 1 to 3
) [mW]
600
D
SNT-6A
400
200
Power Dissipation (P
0
0
50
Ambient Temperature (Ta) [°C]
100
150
Figure 4 Power Dissipation of Package (When Mounted on Board)
5
Page 6
BATTERY MONITORING IC
S-8229 Series Rev.1.0_02
Electrical Characteristics
Table 7
(Ta = +25°C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Detection voltage n*1
Hysteresis width n*2
ON / OFF pin input voltage
"H"
ON / OFF pin input voltage
"L"
−
−V
DETn
300 mV ≤ V
V
HYSn
0 V ≤ V
V
V1 = V3 = 22 V 1.5 − − V 1
SH
V
V1 = V3 = 22 V − − 0.3 V 1
SL
HYSn(S)
≤ 500 mV
HYSn(S)
≤ 50 mV
−V
× 0.99
−V
−V
− 0.025
DETn(S)
HYSn(S)
× 0.8
HYSn(S)
−V
DETn(S)
−V
HYSn(S)
−V
HYSn(S)
−V
× 1.01
−V
−V
+ 0.025
DETn(S)
HYSn(S)
× 1.2
HYSn(S)
Operation voltage range
between VDD pin and
V
− 3.6 − 24 V −
DD
VSS pin
Current consumption during
operation
Current consumption during
power-off
V1 = 22 V, V2 = 3 V,
*3
DETtotal
DETtotal
≥ 42 V
*3
< 42 V
I
DD1
−V
V1 = 22 V, V2 = 3 V,
−V
I
V1 = 22 V, V2 = 0 V − − 0.1 μA 2
DD2
− 4.0 9.0 μA 2
− 5.0 11.0 μA 2
Full charge all on,
Output sink current n I
OUTn
V1 = 22 V, V2 = 3 V,
V3 = 1 V
Full charge all off,
V1 = 10 V, V2 = 3 V,
10 − − mA 3
5 − − mA 3
V3 = 1 V
Output leak current n I
Detection voltage
*4
temperature coefficient
LEAKn
Δ−V
DETn
ΔTa • −V
V1 = 22 V, V2 = 0 V,
V3 = 22 V
Ta = −40°C to +85°C
DETn
*5
− − 0.1 μA 3
− ±100 ±200 ppm/°C 1
*1. −V
*2. V
*3. −V
−V
: Actual detection voltage value, −V
DETn
: Actual hysteresis width, −V
HYSn
: Total detection voltage
DETtotal
DETtotal
= −V
DET1(S)
+ −V
DET2(S)
HYSn(S)
+ −V
: Set hysteresis width
DET3(S)
: Set detection voltage
DETn(S)
*4. The Change in temperature of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − V
DETn
ΔTa
[mV/°C]*1 = −V
DETn(S)
(typ.) [V]*2 ×
Δ − V
ΔTa • −V
DETn
[ppm/°C]*3 ÷ 1000
DETn
*1. Change in temperature of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient
*5. Since products are not screened at high and low temperature, the specification for this temperature range is
guaranteed by design, not tested in production.
Remark n = 1 to 3
Test
Circuit
V 1
V 1
V 1
6
Page 7
BATTERY MONITORING IC
Rev.1.0_02 S-8229 Series
Test Circuits
100 kΩ 100 kΩ 100 kΩ
OUT1
OUT2
OUT3
V1
VDD
ON / OFF
V2
S-8229
Series
VSS
Figure 5 Test Circuit 1
I
DD
VDD A
ON / OFF
V2
V1
Figure 6 Test Circuit 2
V
OUT1VOUT2VOUT3
V V V
OUT1
S-8229
Series
VSS
I
OUT1
OUT2
OUT3
A A
I
OUT2
V3
I
OUT3
A
OUT1
OUT2
OUT3
V1
VDD
ON / OFF
V2
S-8229
Series
VSS
Figure 7 Test Circuit 3
V3
7
Page 8
BATTERY MONITORING IC
S-8229 Series Rev.1.0_02
Standard Circuit
R
OUT1
R
OUT2
R
OUT3
R1
C1
VDD
ON / OFF
S-8229
Series
VSS
OUT1
OUT2
OUT3
Figure 8
Table 8 Constants for External Components
Symbol Purpose Typ. Remark
R1*1
For power fluctuation 470
Ω
Set the value as small as possible to prevent deterioration
of the detection voltage.
C1 For power fluctuation 0.1 μF Set R1 × C1 ≥ 40 × 10−6.
R
OUTn
*2
For output pin pull-up 100 k
Ω
Make sure the power dissipation of the S-8229 Series is
not exceeded.
*1. Set up R1 as 100 kΩ or less to prevent oscillation.
*2. Set up each of R
as 620 Ω or more so that the power dissipation is not exceeded.
OUTn
Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough
evaluation using the actual application to set the constant.
Remark n = 1 to 3
8
Page 9
BATTERY MONITORING IC
Rev.1.0_02 S-8229 Series
Operation
1. Basic operation
The basic operation when V
≥ VSH is shown as follows.
ON / OFF
1. 1 When the power supply voltage (VDD) increases
The OUTn pin becomes release status if VDD is equal to or higher than the release voltage (+V
Table 9 Set Conditions at Releasing
Output Logic V
Full charge all on VSS On
Full charge all off High-Z Off
1. 2 When VDD decreases
The OUTn pin becomes detection status if VDD is equal to or lower than the detection voltage (−V
Table 10 Set Conditions at Detecting
Output Logic V
Full charge all on High-Z Off
Full charge all off VSS On
1. 3 When VDD ≤ minimum operation voltage
The OUTn pin voltage is indefinite.
Remark n = 1 to 3
2. ON / OFF pin
Nch n
OUTn
Nch n
OUTn
DETn
).
DETn
).
This pin starts and stops the S-8229 Series.
When V
Block Diagram") is turned off, reducing current consumption significantly.
"
The ON / OFF pin is configured as shown in
is set to VSL or lower, the entire internal circuit stops operating, and Nch n (refer to Figure 1 in
ON / OFF
Figure 9. The ON / OFF pin is not internally pulled up or pulled down,
so do not use the ON / OFF pin in the floating status. When not using the ON / OFF pin, connect the pin to the VDD
pin.
VDD
ON / OFF
VSS
Figure 9
Remark n = 1 to 3
9
Page 10
BATTERY MONITORING IC
S-8229 Series Rev.1.0_02
Timing Charts
1. Nch open-drain output (full charge all on, V
+V
DET1
−V
DET1
+V
DET2
−V
DET2
VDD pin voltage
+V
DET3
−V
DET3
Minimum operation voltage
High-Z
OUT1 pin voltage
ON / OFF
≥ VSH)
OUT2 pin voltage
OUT3 pin voltage
Remark When V
V
SS
High-Z
V
SS
High-Z
V
SS
Figure 10
is equal to or lower than the minimum operation voltage, the output voltage from the OUT1 pin
DD
to the OUT3 pin is indefinite in the shaded area.
10
Page 11
BATTERY MONITORING IC
Rev.1.0_02 S-8229 Series
2. Nch open-drain output (full charge all off, V
+V
DET1
−V
DET1
+V
DET2
−V
DET2
VDD pin voltage
+V
DET3
−V
DET3
Minimum operation voltage
High-Z
OUT1 pin voltage
ON / OFF
≥ VSH)
OUT2 pin voltage
OUT3 pin voltage
Remark When V
V
SS
High-Z
V
SS
High-Z
V
SS
Figure 11
is equal to or lower than the minimum operation voltage, the output voltage from the OUT1 pin
DD
to the OUT3 pin is indefinite in the shaded area.
11
Page 12
BATTERY MONITORING IC
S-8229 Series Rev.1.0_02
Application Circuits
1. Detection of residual quantity of the battery used by LED
R
OUT1
R
OUT2
R
OUT3
R1
C1
VDD
ON / OFF
S-8229
Series
VSS
OUT1
OUT2
OUT3
LED3 LED2 LED1
Figure 12
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
2. Change of detection voltage
When the detection voltage is changed by using a resistance divider, set RA ≤ 100 kΩ to prevent oscillation, as
shown in
The detection voltage after changing is calculated by using the following equation.
Detection voltage =
Figure 13.
+ R
RA
B
× −V
R
B
+ RA × IDD
DETn
R
R
OUT1
OUT2
R
OUT3
RA
RB
C1
VDD
ON / OFF
S-8229
Series
VSS
OUT1
OUT2
OUT3
Figure 13
Caution 1. Note that the detection voltage may deviate from the value determined by the ratio of RA and R
in the case of the above connection diagram.
2. The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
Remark n = 1 to 3
12
B
Page 13
BATTERY MONITORING IC
*1
Rev.1.0_02 S-8229 Series
3. Short-circuit of the output pin
In the case of −V
short-circuiting the output pin, as shown in
DET1(S)
= −V
DET2(S)
= −V
, +V
DET3(S)
Figure 14.
DET1
= +V
DET2
= +V
, the load current can be increased by
DET3
R1
C1
VDD
ON / OFF
S-8229
Series
VSS
OUT1
OUT2
OUT3
R
OUT
*1. Set up R
as 220 Ω or more so that the power dissipation is not exceeded.
OUT
Figure 14
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
13
Page 14
BATTERY MONITORING IC
S-8229 Series Rev.1.0_02
Precautions
• The application conditions for the input voltage, output voltage, and output pin pull-up resistance should not exceed
the package power dissipation.
• Wiring patterns for the VDD pin, the VOUT pin and the VSS pin should be designed so that the impedance is low.
• Note that the detection voltage may deviate due to the resistance component of output sink current and the VSS pin
wiring.
• In applications where a resistor is connected to the input (refer to Figure 8 in " Standard Circuit"), the
feed-through current which is generated when the output switches causes a voltage drop equal to feed-through
current
and the output switches. The feed-through current is then generated again, a voltage drop appears. Note that an
oscillation may be generated for this reason.
• When designing for mass production using an application circuit described herein, the product deviation and
temperature characteristics should be taken into consideration. SII Semiconductor Corporation shall not bear any
responsibility for patent infringements related to products using the circuits described herein.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any
infringement by products including this IC of patents owned by a third party.
× input resistance. In this state, the feed-through current stops and its resultant voltage drop disappears,
14
Page 15
BATTERY MONITORING IC
Rev.1.0_02 S-8229 Series
Characteristics (Typical Data)
1. Detection voltage
1. 1 −V
vs. Ta
DETn
−V
21.7
21.6
[V]
21.5
DETn
−V
21.4
21.3
−40 0 255075
−25
Ta [°C]
10.60
10.55
[V]
10.50
DETn
−V
10.45
10.40
−40 0 255075
−25
Ta [°C]
2. Hysteresis width
−V
= 21.5 V −V
DETn(S)
DETn(S)
17.7
17.6
[V]
17.5
DETn
−V
17.4
17.3
85
= 10.5 V
DETn(S)
−40 0 255075
−25
Ta [°C]
85
= 17.5 V
85
2. 1 −V
vs. Ta
HYSn
−V
0.60
0.55
[V]
0.50
HYSn
V
0.45
0.40
−40 0 255075
−25
Ta [°C]
0.08
0.07
0.06
[V]
0.05
HYSn
0.04
V
0.03
0.02
−40 0 255075
−25
Ta [°C]
Remark n = 1 to 3
−V
= 0.5 V −V
HYSn(S)
HYSn(S)
0.36
0.34
0.32
[V]
0.30
HYSn
0.28
V
0.26
0.24
85
= 0.05 V
HYSn(S)
−40 0 255075
−25
Ta [°C]
85
= 0.3 V
85
15
Page 16
BATTERY MONITORING IC
S-8229 Series Rev.1.0_02
3. Current consumption
3. 1 I
vs. VDD 3. 2 I
DD1
DD1
vs. Ta
S-8229AAA Ta = +25°C S-8229AAA VDD = 22 V
[μA]
DD1
I
12
9
6
3
0
0 5 10 15 20
DD
[V]
V
25
6.0
4.0
[μA]
DD1
2.0
I
0
−40 0 255075
−25
Ta [°C]
3. 3 I
vs. Ta
DD2
S-8229AAA VDD = 22 V
0.10
0.08
0.06
[μA]
0.04
DD2
I
0.02
85
0
−40 0 255075
−25
Ta [°C]
85
4. Output current
4. 1 I
VDD = 22 V V
[mA]
OUTn
I
Remark n = 1 to 3
OUTn
vs. V
4. 2 I
OUTn
120
100
80
60
Ta = +85°C
Ta = −40°C
Ta = +25°C
40
20
0
0 0.5 1.0 1.5
V
OUTn
[V]
2.0
vs. VDD
OUTn
70
60
50
[mA]
40
30
OUTn
I
Ta = +25°C
Ta = −40°C
20
10
5101520
V
DD
[V]
= 1 V
OUTn
Ta = +85°C
3025
16
Page 17
BATTERY MONITORING IC
Rev.1.0_02 S-8229 Series
5. Response time
5. 1 t
DETn
vs. Δ−V
Δ−V
100
80
60
[ms]
40
DETn
t
20
0
1 100
5. 2 t
DETn
= −V
−V
DETn
DETn
= 21.5 V
−V
DETn
−V
DETn
= 17.5 V
DETn
10
DETn
Δ−V
VDD pin voltage
OUTn pin voltage
(Full charge all on)
vs. Δ+V
RELn
− VDD, Ta = +25°C Δ+V
20
+V
15
[ms]
RELn
t
10
5
= 10.5 V
0
[mV]
+V
−V
V
DETn
DETn
OUTn
V
DD
1000
Δ − V
DETn
t
DETn
1 100
Δ + V
t
RELn
DETn
= VDD − (+V
DETn
DETn
= 22.0 V
+V
+V
10
DETn
DETn
DETn
Δ+V
= 17.5 V
= 10.5 V
DETn
[mV]
), Ta = +25°C
DETn
1000
V
SS
V
OUTn
OUTn pin voltage
(Full charge all off)
V
DD
t
DETn
V
SS
t
RELn
Figure 15 Test Condition of Response Time
Remark 1. Refer to "Figure 5 Test Circuit 1" for the test condition of the response time.
2. n = 1 to 3
17
Page 18
BATTERY MONITORING IC
S-8229 Series Rev.1.0_02
Marking Specifications
1. SOT-23-6
Top view
465
(1) (2) (3) (4)
123
Product name vs. Product code
Product Name
S-8229AAA-M6T1U Y S A
S-8229AAB-M6T1U Y S B
S-8229AAC-M6T1U Y S C
(1) to (3):
(4): Lot number
Product Code
(1) (2) (3)
2. SNT-6A
Top view
645
(1) (2) (3)
(4) (5) (6)
132
(1) to (3):
(4) to (6): Lot number
Product code (Refer to
Product code (Refer to
Product name vs. Product code)
Product name vs. Product code)
Product name vs. Product code
Product Name
S-8229AAF-I6T1U Y S F
Product Code
(1) (2) (3)
18
Page 19
2.9±0.2
1.9±0.2
6
1
0.95
0.35±0.15
5
4
3
2
0.95
0.15
+0.1
-0.05
No. MP006-A-P-SD-2.0
TITLE
No.
SCALE
UNIT
SOT236-A-PKG Dimensions
MP006-A-P-SD-2.0
mm
SII Semiconductor Corporation
Page 20
4.0±0.1(10 pitches:40.0±0.2)
ø1.5
3.2±0.2
+0.1
-0
2.0±0.05
ø1.0
+0.2
-0
0.25±0.1
4.0±0.1
1.4±0.2
45
123
6
Feed direction
No. MP006-A-C-SD-3.1
TITLE
No.
SCALE
UNIT
SOT236-A-Carrier Tape
MP006-A-C-SD-3.1
mm
SII Semiconductor Corporation
Page 21
12.5max.
Enlarged drawing in the central part
(60°) (60°)
ø13±0.2
TITLE
No.
SCALE
UNIT
9.0±0.3
No. MP006-A-R-SD-2.1
SOT236-A-Reel
MP006-A-R-SD-2.1
QTY
mm
3,000
SII Semiconductor Corporation
Page 22
1.57±0.03
6
123
0.5
45
0.2±0.05
0.48±0.02
0.08
+0.05
-0.02
No. PG006-A-P-SD-2.0
TITLE
No.
SCALE
UNIT
SNT-6A-A-PKG Dimensions
PG006-A-P-SD-2.0
mm
SII Semiconductor Corporation
Page 23
ø1.5
+0.1
-0
1.85±0.05
5°
4.0±0.1
4.0±0.1
0.65±0.05
2.0±0.05
+0.1
ø0.5
-0
243
1
0.25±0.05
56
Feed direction
TITLE
No.
SCALE
UNIT
No. PG006-A-C-SD-1.0
SNT-6A-A-Carrier Tape
PG006-A-C-SD-1.0
mm
SII Semiconductor Corporation
Page 24
12.5max.
Enlarged drawing in the central part
(60°) (60°)
ø13±0.2
TITLE
No.
SCALE
UNIT
9.0±0.3
No. PG006-A-R-SD-1.0
SNT-6A-A-Reel
PG006-A-R-SD-1.0
QTY.
5,000
SII Semiconductor Corporation
Page 25
0.52
2
1.36
0.52
1
0.3
0.2
1. (0.25 mm min. / 0.30 mm typ.)
2. (1.30 mm ~ 1.40 mm)
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1.
2.
(0.25 mm min. / 0.30 mm typ.)
(1.30 mm ~ 1.40 mm)
SNT-6A-A
No. PG006-A-L-SD-4.1
TITLE
No.
SCALE
UNIT
-Land Recommendation
PG006-A-L-SD-4.1
mm
SII Semiconductor Corporation
Page 26
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or
country where they are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all
other export-related laws, and follow the required procedures.
7. The products described herein must not be used or provided (exported) for the purposes of the development of
weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,
missiles, or other military use.
8. The products described herein are not designed to be used as part of any device or equipment that may affect the
human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,
combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment,
aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle
use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation.
Especially, the products described herein cannot be used for life support devices, devices implanted in the human
body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
9. Semiconductor products may fail or malfunction with some probability.
The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.
The entire system must be sufficiently evaluated and applied on customer's own responsibility.
10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be
taken in the product design by the customer depending on the intended use.
11. The products described herein do not affect human health under normal use. However, they contain chemical
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where
they are used.
13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation.
The information described herein does not convey any license under any intellectual property rights or any other
rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information
described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
1.0-2016.01
www.sii-ic.com
Page 27
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