Page 1
Elektronische Bauelemente
FEATURES
z Complimentary to S8550T
z Collector Current: I
= 0.5 A
C
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
4.55
TO-92
0.2
0.2
4.5
S8050T
NPN Silicon
0.2
3.5
(1.27 Typ.)
132
2.54
1.25
0.1
0.2
0.46
0.2
14.3
0.08
0.43
0.1
0.07
1: Emitter
2: Base
3: Collector
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Currrent IC 500
Total Power Dissipation PD 625 mW
Junction, Storage Temperature TJ, T
40 V
CBO
25 V
CEO
5 V
EBO
mA
+150, -55 ~ +150 ℃
STG
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
AMB
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-base Breakdown Voltage V
Collector-emitter Breakdown Voltage V
Emitter-base Breakdown Voltage V
Collector Cut-off Current I
40 - - V IC = 100 μA, IE = 0
(BR)CBO
25 - - V IC = 0.1 mA, IB = 0
(BR)CEO
5 - - V IE = 100 μA, IC = 0
(BR)EBO
- - 0.1
CBO
μA
V
CB
= 40 V, I
E
= 0
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
Collector-emitter Saturation Voltage V
Base-emitter Saturation Voltage V
Transition Frequency f T 150 - - MHz V
- - 0.1
CEO
- - 0.1
EBO
h
85 - 400 V
FE(1)
50 - - V
h
FE(2)
- - 0.6 V IC = 500 mA, IB = 50 mA
CE(sat)
- - 1.2 V IC = 500 mA, IB = 50 mA
BE(sat)
μA
μA
V
= 20 V, IB = 0
CE
V
= 5 V, IC = 0
EB
= 1 V, IC = 50 mA
CE
= 1 V, IC = 500 mA
CE
= 6 V, IC= 20 mA, f = 30 MHz
CE
CLASSIFICATION OF h
Rank B C D D3
Range 85 - 160 120 - 200 160 - 300 300 - 400
FE
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-June-2005 Rev. B Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
S8050T
General Purpose Transistor
NPN Silicon
S8050T
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-June-2005 Rev. B Page 2 of 2
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