Datasheet s2n7002w Datasheet

Top View

A

L

C B

D

G

H J

F

K E

1

2

3

1

2

3

SOT

-323

Millimeter

Millimeter

Min. Max.

Min. Max.

1

Gate

2

Drain

1

2

Drain

1

2

X X

Elektronische Bauelemente

FEATURES

♦ Low on-resistance
♦ Low gate threshold voltage
♦ Low input capacitance

♦

Fast switching speed

♦

Low input/output leakage

♦

Ultra-small surface mount package

PACKAGE INFORMATION

S2N7002W

115 mA, 60 V, R

N-Ch Small Signal MOSFET

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DS(ON)

= 7.5 Ω

Drain

3

3

6C

3

72

Gate

Gate

Source

Source

X=Date Code

Source

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT

Drain-Source Voltage V
Drain-Gate Voltage(RGS=1.0MΩ) V
Continuous Drain Current1 (TA=25°C) ±115
Continuous Drain Current1(TA=100°C)
Pulsed Drain Current2 IDM ±800

60 Vdc

DDS

60 Vdc

DGR

ID

REF.

A 1.80 2.20 G 0.00 0.10
B 2.00 2.40 H 0.425 REF.
C 1.15 1.35 J 0.10 0.25
D 0.80 1.00 K - ­E 1.20 1.40 L 0.650 TYP.
F 0.30 0.40

±75

REF.

mAdc

Continuous Gate-Source Voltage VGS ±20 Vdc
Non-repetitive Gate-Source Voltage(tP≦50µs) V

±40 Vpk

GSM

THERMAL CHARACTERISTICS

Total Device Dissipation FR-5 Board3(TA=25°C)

PD

Derating above 25°C
Thermal Resistance, Junction to Ambient R

Junction and Storage Temperature

Notes:

1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2.0%

3. FR-5=1.0*0.75*0.62 in.

18-Dec-2009 Rev. B Page 1 of 3

556 °C/W

θJA

TJ, T

-55~150 °C

STG

225

1.8

mW/°C

mW

S2N7002W

Elektronische Bauelemente

115 mA, 60 V, R

N-Ch Small Signal MOSFET

DS(ON)

= 7.5 Ω

ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain

Current
Gate-Body Leakage Current, Forward I

Gate-Body Leakage Current, Reverse I

Gate Threshold Voltage V
On-State Drain Current I

Static Drain-Source On-State Voltage V

Static Drain-Source On-State
Resistance (TA=25°C)

Static Drain-Source On-State
Resistance (TA=125°C)

TJ =25°C - - 1.0
TJ =125°C

(TA = 25°C unless otherwise specified)

OFF CHARACTERISTICS

(BR)DSS

I

DSS

GSSF

GSSR

60 - - Vdc V

µAdc VGS=0, V

- - 500

- - 100 nAdc VGS=20Vdc

- - -100 nAdc VGS=-20Vdc

ON CHARACTERISTICS1

1.0 1.6 2.5 Vdc V

GS(th)

D(ON)

500

- - mA VDS≧2.0V

- - 3.75

DS(ON)

Vdc

- - 0.375

- 1.4 7.5 VGS=10Vdc, ID =500mAdc

r

DS(ON)

- 1.8 7.5

Ω

- - 13.5

r

DS(ON)

- - 13.5

Ω

TEST CONDITIONS

= 0, ID = 10µAdc

GS

= 60Vdc

DS

= VGS, ID =250µAdc

DS

DS(ON),VGS

=10Vdc
VGS=10Vdc, ID =500mAdc
VGS=5Vdc, ID =50mAdc

VGS=5Vdc, ID =50mAdc
VGS=10Vdc, ID =500mAdc
VGS=5Vdc, ID =50mAdc

Forward Transconductance gFS 80 - - mmhos VDS2V≧

DS(ON),ID

=200mAdc

DYNAMIC CHARACTERISTICS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

- 17 50 pF VDS=25Vdc, VGS=0, f=1MHz

iss

- 10 25 pF VDS=25Vdc, VGS=0, f=1MHz

oss

- 2.5 5.0 pF VDS=25Vdc, VGS=0, f=1MHz

rss

SWITCHING CHARACTERISTICS1

Turn-On Delay Time td
Turn-Off Delay Time td

- 7 20

(ON)

- 11 40

(OFF)

VDD=25Vdc, ,ID≅500mAdc

nS

RG=25Ω,RL=50Ω, V

GEN

BODY-DRAIN DIODE RATINGS
Diode Forward On-Voltage VSD - - -1.5 Vdc IS=11.5mAdc,VGS=10V
Source Current Continuous IS - - -115 mAdc
Source Current Pulsed ISM - - -800 mAdc

Notes:

1. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2.0%

=10V

18-Dec-2009 Rev. B Page 2 of 3

Elektronische Bauelemente

CHARACTERISTIC CURVE (N-Ch, cont’d)

S2N7002W

115 mA, 60 V, R

N-Ch Small Signal MOSFET

DS(ON)

= 7.5 Ω

18-Dec-2009 Rev. B Page 3 of 3