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GATE
SOURCE
DRAIN
*
* Gate
Pretection
Diode
Millimeter
Millimeter
Min. Max.
Min. Max.
Top View
A
L
C B
D
G
H J
F
K E
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2
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S2N7002K
Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
FEATURES
Low on resistance.
Fast switching speed.
Low-voltage drive.
Easily designed drive circuits.
Easy to parallel.
Pb-Free package is available.
ESD protected:2000V
DEVICE MARKING: RK
MAXIMUM RATINGS
Drain – Source Voltage V
Gate – Source Voltage V
Drain Current
Drain Reverse Current
Total Power Dissipation P
Channel & Storage Temperature TCH, T
Note: 1. Pulse width ≦10µS, Duty cycle≦1%. 2. When mounted on 1x0.75x0.062 inch glass epoxy board.
(TA = 25°C unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
60 V
DSS
±20 V
GSS
Continuous ID 115 mA
Pulsed I
Continuous IDR 115 mA
Pulsed I
1
0.8 A
DP
1
0.8 A
DRP
2
225 mW
D
150, -55~150 °C
STG
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN TYP MAX UNIT
Gate-Source Leakage Current I
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate Threshold Voltage V
Drain-Source On-State Resistance* R
Forward Transfer Admittance |YFS|* 80 - - mS VDS=10V, ID=0.2A
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time T
Turn-off Delay Time T
* Pulse width ≦300µS, Duty cycle≦1%
(TA = 25°C unless otherwise specified)
- - ±10 µA VGS=±20V, VDS=0V
GSS
60 - - V VGS=0V, ID =10µA
(BR)DSS
- - 1 µA VDS=60V, VGS=0V
DSS
1 1.85 2.5 V VDS= V
GS(TH)
*
DS(ON)
- 25 50
ISS
- 10 25
OSS
- 3.0 5.0
RSS
* - 12 20
d(ON)
* - 20 30
d(OFF)
- - 7.5 VGS=10V, ID=0.5A
- - 7.5
SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT
115mA, 60V
Ω
pF
nS
SOT-23
REF.
A 2.70 3.04 G - 0.18
B 2.10 2.80 H 0.40 0.60
C 1.20 1.60 J 0.08 0.20
D 0.89 1.40 K 0.6 REF.
E 1.78 2.04 L 0.85 1.15
F 0.30 0.50
REF.
TEST CONDITION
=250µA
GS, ID
VGS=5V, ID=0.05A
VDS=25V
VGS=0V
f=1MHz
VDD≒30V, V
I D=200mA, RL=150Ω, RGS=10Ω
Gs
=10V
08-Mar-2010 Rev. B Page 1 of 3
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
S2N7002K
N-Channel Enhancement Mode Power MOSFET
115mA, 60V
08-Mar-2010 Rev. B Page 2 of 3
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
S2N7002K
N-Channel Enhancement Mode Power MOSFET
115mA, 60V
08-Mar-2010 Rev. B Page 3 of 3
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