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Elektronische Bauelemente
MECHANICAL DATA
Case: SOT-363，Molded Plastic.
Case Material-UL Flammability Rating 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Weight: 0.006 grams(approx.)
DEVICE MARKING:
702
PACKAGE INFORMATION
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
S2N7002DW
115mA, 60V
Dual N-Channel MOSFET
SOT-363
Package MPQ Leader Size
Millimeter Millimete
REF.
SOT-363 3K 7’ inch
Min. Max.
A 2.00 2.20 G 0.100 REF.
B 2.15 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.15
D 0.90 1.10 K 8°
E 1.20 1.40 L 0.650 TYP.
F 0.15 0.35
REF.
Min. Max.
MAXIMUM RATINGS (T
Drain – Source Voltage VDS 60 V
Drain – Gate Voltage RGS＝1MΩ V
Gate – Source Voltage VGS ±20 V
= 25°C unless otherwise specified)
A
Parameter Symbol Rating Unit
60 V
DGR
Continuous Drain Current ID 115 mA
Power Dissipation PD 380 mW
Maximum Junction-to-Ambient R
Operating Junction & Storage Temperature Range TJ, T
Note:
1. Pulse Width Limited by Maximum Junction Temperature.
328 °C / W
θJA
-55~150 °C
STG
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-May-2011 Rev. B Page 1 of 3
Page 2
S2N7002DW
Elektronische Bauelemente
Dual N-Channel MOSFET
115mA, 60V
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
A
Symbol Min. Typ. Max.
Unit Teat Conditions
Static
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Source Leakage I
TC= 25°C - - 1 VDS=60V, VGS=0
Zero Gate Voltage Drain Current
= 125°C
T
C
On-State Drain Current I
TJ= 25°C - - 7.5 VGS=5V, ID=0.05A
Drain-Source On Resistance
= 125°C
T
J
Forward Transconductance gFS 80 - - ms VDS≧2 V
60 - - V VGS=0, ID=10μA
(BR)DSS
1 - 2 V VDS=V
GS(TH)
- - ±1 μA VDS=0 , VGS= ±20V
GSS
I
DSS
- - 500
0.5 - - A VGS=10V, VDS=7.5V
D(on)
R
DS(ON)
- - 13.5 Ω V
μA
=60V, VGS=0
V
DS
=10V, ID=0.5A
GS
Body-Drain Diode Ratings
Diode Forward On–Voltage VSD - - -1.5 V IS=115mA, VGS=0
Source Current Continuous(Body Diode) IS - - -115 mA
Source Current Pulsed ISM - - -800 mA
Dynamic Characteristics
GS, ID
=250μA
DS(ON)
, ID= 0.2A
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Switching Characteristics
Turn-on Delay Time T
Turn-off Delay Time T
- - 50
ISS
- - 25
OSS
- - 5
RSS
- - 20
d(ON)
- - 40
d(OFF)
pF
nS
=25V,
V
DS
V
=0,
GS
f=1MHz
=25V, I D=0.5A
V
DD
R
=50Ω,
L
V
=10V, RG=25Ω
GEN
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-May-2011 Rev. B Page 2 of 3
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
S2N7002DW
Dual N-Channel MOSFET
115mA, 60V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-May-2011 Rev. B Page 3 of 3
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