Datasheet s2n7002 Datasheet

Top View

A

L

C B

D

G

H J

F

K E

1

2

3

1

2

3

702

Millimeter

Millimeter

Min. Max.

Min. Max.

A 2.80 3.04 G 0.013 0.10

B 2.10 2.55 H 0.45 0.60

C 1.20 1.40 J 0.08 0.177

1

Gate

2

S2N7002

Elektronische Bauelemente

115 mA, 60 V,

N-Ch Small Signal MOSFET

R

DS(ON)

= 7.5 Ω

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES



Pb-Free Package is Available

PACKAGING INFORMATION

Drain

3

Drain

3

MAXIMUM RATINGS

Note: 1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦ 2.0%

3. FR-5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina

ELECTRICAL CHARACTERISTICS

Note: 1. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦ 2.0%

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

24-Nov-2009 Rev. B Page 1 of 2

W

1

Gate
702 =Device Code

W =Date Code

Source

2

Source

(at TA = 25°C unless otherwise specified)

REF.

D 0.89 1.15 K 0.6 REF.
E 1.80 2.00 L 0.89 1.02
F 0.30 0.50

REF.

PARAMETER SYMBOL RATING UNIT

Drain-Source Voltage V
Drain-Gate Voltage(RGS=1.0 MΩ) V

Continuous Drain Current

TC=25°C 1 ±115 mAdc

TC=100°C 1
Pulsed Drain Current 2 IDM ±800 mAdc
Continuous Gate-Source Voltage VGS ±20 Vdc
Non-Repetitive Gate-Source Voltage(tP5≦ 0µS) V

THERMAL CHARACTERISTICS

TA=25°C 225 mW Total Device Dissipation
FR-5 Board 3

Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature TJ, T

(at TA = 25°C unless otherwise specified)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current

TJ =25°C - - 1.0

TJ =125°C
Gate-Body Leakage Current, Forward I
Gate-Body Leakage Current, Reverse I

Gate Threshold Voltage V
On-State Drain Current I

Static Drain-Source On-State Voltage V

(TA=25°C)
(TA=125°C)

Forward Transconductance gFS 80 - - mmhos VDS2V≧
Input Capacitance C

Output Capacitance C
Reverse Transfer Capacitance C

Turn-On Delay Time td
Turn-Off Delay Time td

Diode Forward On-Voltage VSD - - -1.5 Vdc IS=11.5mAdc,VGS=0V
Source Current Continuous(Body Diode) IS - - -115 mAdc
Source Current Pulsed ISM - - -800 mAdc

(BR)DSS

I

GSSF
GSSR

GS(th)

D(ON)

DS(ON)

R

DS(ON)

R

DS(ON)

DYNAMIC CHARACTERISTICS

SWITCHING CHARACTERISTICS1

BODY-DRAIN DIODE RATINGS

60 Vdc

DSS

60 Vdc

DGR

ID

±40 Vpk

GSM

PD

556 °C/W

θJA

-55~150 °C

STG

±75 mAdc

1.8 mW/°C

TEST CONDITION

OFF CHARACTERISTICS

DSS

- - 100 nAdc VGS=20Vdc

ON CHARACTERISTICS1

500 - - mA VDS2.0V≧

- 17 50 pF VDS=25Vdc, VGS=0, f=1MHz

iss

- 10 25 pF VDS=25Vdc, VGS=0, f=1MHz

oss

- 2.5 5.0 pF VDS=25Vdc, VGS=0, f=1MHz

rss

- 7 20

(ON)

(OFF)

60 - - Vdc V

- - 500

µAdc VGS=0, V

- - -100 nAdc VGS=-20Vdc

1.0 1.6 2.5 Vdc V

- 11 40

- - 3.75

- - 0.375

- 1.4 7.5 VGS=10Vdc, ID =500mAdc Static Drain-Source On-State Resistance

- 1.8 7.5

- - 13.5

- - 13.5

Vdc

Ω
Ω

nS

= 0, ID = 10µAdc

GS

= 60Vdc

DS

= VGS, ID =250µAdc

DS

DS(ON),VGS

VGS=10Vdc, ID =500mAdc
VGS=5Vdc, ID =50mAdc

VGS=5Vdc, ID =50mAdc
VGS=10Vdc, ID =500mAdc Static Drain-Source On-State Resistance
VGS=5Vdc, ID =50mAdc

=200mAdc

DS(ON),ID

VDD=25Vdc, ,ID≅500mAdc
RG=25Ω,RL=50Ω, V

=10Vdc

=10V

GEN

S2N7002

Elektronische Bauelemente

RATINGS AND CHARACTERISTIC CURVES

115 mA, 60 V,

R

DS(ON)

= 7.5 Ω

N-Ch Small Signal MOSFET

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

24-Nov-2009 Rev. B Page 2 of 2