Page 1
S11MD5T/S21MD3TV/S21MD4TV
S11MD5T/S21MD3TV/
S21MD4TV
1. NO.5 pin completely sealed in the mold for
external noise resistance
2. Built-in zero-cross circuit (S21MD4TV
3. High repetitive peak OFF-state voltage.
S11MD5T V
S21MD3TV/S21MD4TV V
: MIN. 400V
DRM
DRM
4. Isolation voltage between input and output
(Viso : 5 000 Vrms
)
5. Recognized by UL : recognized, file No. E64380
■ Applications
1. For triggering of power triac
■ Model Line-ups
100V S11MD5T
200V
S21MD3TV/S21MD4TV
)
: MIN. 600V
High Noise-resistance Type
Phototriac Coupler
■ Outline Dimensions■ Features
S11MD5T/S21MD3TV
S21MD4TV
46
S11MD5T
Anode
mark
0.5
±
3.35
Marking of S21MD3TV :
Marking of S21MD4TV :
❈ Zero-cross circuit (S21MD4TV
2.54
1
±
0.25
7.12
2
3
0.9
1.2
±
0.5
0.5
0.5
±
3.7
Internal connection
diagram
0.5
±
6.5
±
0.2
±
0.3
0.5
±
3.5
TYP.
0.5
±
0.1
θ : 0 to 13 ˚
1 Anode
2 Cathode
3 NC
S21MD3T
S21MD4T
64
123
±
0.3
7.62
±
0.1
0.26
)
(
Unit : mm
❈
Zero-cross
circuit
θ
4 Anode/
Cathode
6 Anode/
Cathode
)
■ Absolute Maximum Ratings
Parameter Symbol
Input
Forward current
Reverse voltage V
RMS ON-state current
Output
∗1
Peak one cycle surge current I
Repetitive peak OFF-state voltage
∗2
Isolation voltage V
V
Operating temperature T
Storage temperature T
∗3
Soldering temperature T
∗1 Sine wave
∗2 40 to 60%RH, AC for 1 minute, f= 60Hz
∗3 For 10 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
I
I
surge
DRM
S11MD5T
F
R
T
400 600 V
iso
opr
stg
sol
Rating
S21MD3TV/S21MD4TV
50 mA
6V
0.1
1.2 A
5 000
- 30 to +100 ˚C
- 55 to +125 ˚C
260 ˚C
(
Ta = 25˚C
Unit
A
rms
V
rms
)
Page 2
S11MD5T/S21MD3TV/S21MD4TV
■ Electro-optical Characteristics
Parameter
Forward
Input
voltage
Reverse current I
Repetitive peak OFF-state current
ON-state
voltage
Output
Holding current I
Critical rate
of rise of OFFstate voltage
Zero-cross
voltage
Minimun trigger current I
Transfer
Isolation resistance R
characteristics
Turn-on
time
∗4 S21MD3TV : IF=30mA
S11MD5T/S21MD4TV
S21MD3TV
S11MD5T
S21MD3TV/S21MD4TV
S11MD5T/S21MD4TV
S21MD4TV V
S11MD5T
S21MD3TV - 100
(
Symbol Conditions MIN. TYP. MAX.
V
R
I
DRM
V
H
dV/dt
OX
FT
ISO
t
on
F
T
IF= 20mA
= 30mA
I
F
VR=3V
V
DRM=Rated
IT= 0.1A
VD=6V
V
= 1/ 2 Rated
DRM
Resistance load
IF= 15mA
VD=6V
= 100Ω
R
L
DC500V
40 to 60%RH
= 6V, IF= 20mA
V
D
RL= 100Ω
- 1.2 1.4
--10
--10
-5
-6
- 1.3 2.0
- 1.7 2.5
0.1 1 3.5
100 - 500 - -S21MD3TV
--35
--10
10
5x10
∗4
- 80 200
11
10
-
-
-50
20S21MD4TV
Ta= 25˚C
Unit
V
A
A
V
V
mA
V/µs
V/µs
V
mA
Ω
µs
µs
µs
)
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
0.10
T
0.05
RMS ON-state current I
0
-
30 0 20406080100
Ambient temperature T
a
(˚C)
Fig. 2 Forward Current vs.
Ambient Temperature
70
60
)
50
mA
(
F
40
30
20
Forward current I
10
0
-
30 0 25 50 75 100 125
Ambient temperature Ta (˚C
)
Page 3
S11MD5T/S21MD3TV/S21MD4TV
Fig. 3 Forward Current vs. Forward Voltage
200
100
Ta= 100˚C
)
50
mA
(
F
20
10
Forward current I
5
2
1
0 0.5 1.0 1.5 2.5 3.02.0
75˚C
50˚C
Forward voltage V
-
25˚C
0˚C
30˚C
)
(V
F
Fig. 5 Relative Repetitive Peak OFF-state
Voltage vs. Ambient Temperature
1.3
)
1.2
j
1.1
T = 25˚C
(
DRM
1.0
/V
)
a
0.9
j
T=T
(
0.8
DRM
Relative repetitive peak OFF-state voltage
V
0.7
-
30
0 20406080100
Ambient temperature Ta (˚C
S21MD3TV
S11MD5T
S21MD4TV
)
Fig. 6-b ON-state Voltage vs.
Ambient Temperature
2.0
1.9
)
V
(
1.8
T
1.7
(
S21MD3TV/S21MD4TV
= 100mA
I
T
S21MD3TV
S21MD4TV
)
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
14
12
)
mA
10
(
FT
8
6
4
2
Minimum trigger current I
0
-
30
Ambient temperature T
S11MD5T
VD=6V
R
L
S21MD3TV
S21MD4TV
(˚C
a
Fig. 6-a ON-state Voltage vs.
Ambient Temperature
(
1.6
1.5
)
V
(
1.4
T
1.3
1.2
ON-state voltage V
1.1
1.0
-
30 0 20406080100
Ambient temperature Ta (˚C
S11MD5T
IT= 100mA
Fig. 7 Holding Current vs.
Ambient Temperature
10
5
)
S11MD5T
mA
(
2
H
1
= 100Ω
)
)
V
D
100806040200
)
=6V
1.6
ON-state voltage V
1.5
1.4
-
30 0 20 100
Ambient temperature Ta (˚C
40 60 80
0.5
Holding current I
0.2
0.1
-
)
30 100
Ambient temperature T
S21MD3TV
S21MD4TV
(˚C
a
806040200
)
Page 4
S11MD5T/S21MD3TV/S21MD4TV
Fig. 8-a Repetitive Peak OFF-state Current Fig. 8-b Repetitive Peak OFF-state Current
vs. OFF-state Voltage
2
)
A
(
-9
10
DRM
5
2
-10
10
(
S11MD5T
Repetitive peak OFF-state current I
5
100 200 300 400 500 600
OFF-state voltage V
(V
D
)
= 25˚C
T
a
)
vs. OFF-state Voltate
2
T
)
A
(
-7
10
DRM
5
= 25˚C
a
S21MD4TV
(
S21MD3TV/S21MD4TV
S21MD3TV
2
-8
10
Repetitive peak OFF-state current I
5
100 200 300 400 500 600
OFF-state voltage V
(V
D
)
)
Fig. 9-a Repetitive Peak OFF-state Current Fig. 9-b Repetitive Peak OFF-state Current
vs. Ambient Temperature
-7
10
)
A
(
-8
DRM
10
-9
10
-10
10
-11
Repetitive peak OFF-state current I
10
= Rated
V
DRM
5
2
5
2
5
2
5
2
5
-
30 0 20406080100
Ambient temperature Ta (˚C
(
S11MD5T
)
Fig.10 Turn-on Time vs. Forward Current
(
200
100
)
µs
(
on
50
Turn-on time t
S11MD5T/S21MD3TV
V
=6V
D
R
= 100Ω
L
= 25˚C
T
a
S11MD5T
S21MD3TV
)(
)
vs. Ambient Temperature
-5
10
V
DRM
5
)
A
(
2
-6
10
DRM
5
2
-7
10
5
2
-8
10
5
2
-9
Repetitive peak OFF-state current I
10
5
-
30 0 100
S21MD3TV/S21MD4TV
= Rated
S21MD4TV
S21MD3TV
20 40 60 80
Ambient temperature Ta (˚C
Fig.11 Zero-cross Voltage vs.
Ambient Temperature
R load
I
= 15mA
F
)
25
V
(
OX
20
Zero-cross voltage V
)
(
S21MD4TV
)
)
20
20 50
Forward current IF (mA
10010
)
15
-
30
Ambient temperature Ta (˚C
100806040200
)
Page 5
S11MD5T/S21MD3TV/S21MD4TV
Fig.12 ON-state Current vs.
ON-state Voltage
100
IF= 20mA
90
= 25˚C
T
a
80
)
70
mA
(
T
60
50
40
30
ON-state current I
20
10
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
●
Please refer to the chapter “Precautions for Use.”
S11MD5T
ON-state voltage
VT
(V
S21MD3TV
S21MD4TV
)
■ Basic Operation Circuit
Medium/High Power Triac Drive Circuit
+V
CC
V
IN
1
2
Zerocross
3
Circuit
Note) Please use on condition of the triac for power triggers.
Zero-cross circuit is applied to
6
4
S21MD4TV.
Load
AC100V : S11MD5T
AC200V : S21MD3TV
S21MD4TV
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