Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2055F
DESCRIPTION
·With TO-3P(H)IS package
·High voltage ,high speed
·Low collector saturation voltage
·Built-in damper diode
APPLICATIONS
·Color TV horizontal output applications
·Color TV switching regulator applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 15 A
IB Base current 4 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 5 V
℃)
T
PC Collector power dissipation
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
=25℃
C
125 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2055F
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF
fT Transition frequency IC=0.1A ; VCE=10V 2 MHz
Collector-emitter sustaining voltage IB=100mA ; IB=0 700 V
Collector-emitter saturation voltage IC=4.5A ;IB=1.0A 5.0 V
Base-emitter saturation voltage IC=4.5A ;IB=1.0A 1.2 V
Collector cut-off current VCB=1500V; VBE=0 1 mA
Emitter cut-off current VEB=5V; IC=0 300 mA
DC current gain IC=1A ; VCE=5V 10 30
DC current gain IC=4.5A ; VCE=5V 4.5 9
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2055F
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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