Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2055AF
DESCRIPTION ·
·With TO-3P(H)IS package
·High voltage ;high speed
·Built-in damper diode
APPLICATIONS
·Horizontal deflection for color TV
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 15 A
PC Collector power dissipation
Tj
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
Junction temperature 150
50 W
℃
T
Storage temperature -55~150
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to case 2.5
th j-C
℃
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2055AF
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE
fT Transition frequency IC=0.1A ; VCE=5V;f=5MHz 7 MHz
Switching times inductive load
ts Storage time 7
tf
Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V
Collector-emitter saturation voltage IC=4.5A ;IB=2.0A 1.0 V
Base-emitter saturation voltage IC=4.5A ;IB=2.0A 1.3 V
=1500V; VBE=0
V
Collector cut-off current
Emitter cut-off current VEB=5V; IC=0 300 mA
DC current gain IC=1A ; VCE=5V 8
Fall time
CE
=125℃
T
C
IC=4.5A ; hFE=2.5; VCC=140V
LC=0.9mH; LB=3μH
0.55
1
2
mA
μs
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2055AF
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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