Datasheet s2000n Datasheet

Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2000N
DESCRIPTION ·
·With TO-3P(H)IS package
·High voltage,high speed
·Low collector saturation voltage
APPLICATIONS
·Color TV horizontal output applications
·Color TV switching regulator applications
PINNING
PIN DESCRIPTION
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 15 A
IB Base current 4 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
50 W
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to case 2.5 ℃/W
th j-C
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2000N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
FE-1
FE-2
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF
fT Transition frequency IC=0.1A ; VCE=10V 2 MHz
Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH 700 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=4.5A ;IB=2.0A 1.0 V
Collector-emitter saturation voltage IC=4.5A ;IB=1.0A 5.0 V
Base-emitter saturation voltage IC=4.5A ;IB=1.0A 1.2 V
Collector cut-off current VCB=1500V; VBE=0 1 mA
DC current gain IC=1A ; VCE=5V 10 30
DC current gain IC=4.5A ; VCE=5V 4.5 9
Switching times
ts Storage time 8 12 μs
tf
Fall time
2
=4.5A;I
I
CP
f
=15.75kHz
H
B1(
end
=1.0A
)
0.4 0.7 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2000N
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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