Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2000A1
DESCRIPTION
·With TO-3PH package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Color TV horizontal output applications
·Color TV switching regulator applications
PINNING(See Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PH) and symbol
ABOSOLUTE MAXIMUM RATINGS (T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 15 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 5 V
=25℃)
C
IB Base current 4 A
PC Collector power dissipation TC=25℃ 125 W
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2000A1
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CE
V
BE
I
CBO
h
FE-1
h
FE-2
(sat)
(sat)
Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=4.5A ;IB=2A 1.0 V
C
=4.5A ;IB=2.0A 1.5 V
C
Collector cut-off current VCB=1500V; VBE=0 1 mA
DC current gain IC=1A ; VCE=5V 10 40
DC current gain IC=4.5A ; VCE=5V 4.5 9
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF
fT Transition frequency IC=0.1A ; VCE=10V 2 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2000A1
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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