Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2000A
DESCRIPTION
·With TO-3P(H)IS package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Color TV horizontal output applications
·Color TV switching regulator applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 15 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 5 V
=25℃)
a
IB Base current 4 A
PC Coll ector power dissipation TC=25℃ 125 W
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2000A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CE(sat)
V
BE(sat)
I
CBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH 700 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=4.5A ;IB=2A 1.0 V
Base-emitter saturation voltage IC=4.5A ;IB=1.0A 1.2 V
Collector cut-off current VCB=1500V; VBE=0 1 mA
DC current gain IC=1A ; VCE=5V 10 30
DC current gain IC=4.5A ; VCE=5V 4.5 9
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF
fT Transition frequency IC=0.1A ; VCE=10V 2 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors S2000A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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