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Silicon PIN Photodiode
Description
S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package.
Due to its flat, waterclear glass window the device is
sensitive to visible and near infrared radiation.
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.
Features
D
High photo sensitivity
D
Large radiant sensitive area A=7.5 mm
D
Fast response times
D
Small junction capacitance
D
For photodiode and photovoltaic operation
D
Hermetically sealed case
D
Wide angle of half sensitivity ϕ = ± 55
D
Suitable for visible and near infrared radiation
D
Suitable to couple with glass fiber
2
°
S153P
Vishay Telefunken
94 8482
Applications
Applications requiring high speed and high sensitive PIN photodiodes in hermetically sealed packages.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
Junction Temperature T
Operating Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
T
x 50 °C
amb
t x 5 s
P
T
R
V
j
amb
sd
thJA
50 V
300 mW
125
–55...+125
260
250 K/W
°
C
°
C
°
C
Document Number 81535
Rev. 2, 20-May-99
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1 (5)
Page 2
S153P
g
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
VR = 3 V, f = 1 MHz, E = 0 C
Open Circuit Voltage EA = 1 klx V
Temp. Coefficient of V
o
EA = 1 klx TK
Short Circuit Current EA = 1 klx I
Ee = 1 mW/cm2,
l
= 950 nm
Temp. Coefficient of I
k
EA = 1 klx TK
Reverse Light Current EA = 1 klx, VR = 5 V I
Ee = 1 mW/cm2,
l
= 950 nm, V
= 5 V
R
(BR)
ro
D
D
o
k
I
k
ra
I
ra
Absolute Spectral Sensitivity VR = 5 V, l = 900 nm s(l) 0.6 A/W
Angle of Half Sensitivity ϕ ±55 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
l
p
l
0.5
Noise Equivalent Power VR = 10 V, l = 950 nm NEP 4.2x10
Rise Time VR = 10 V, RL = 1 kW,
l
= 820 nm
Fall Time VR = 10 V, RL = 1 kW,
l
= 820 nm
t
r
t
f
50 V
2 30 nA
75 pF
25 40 pF
350 mV
Vo
–2.6 mV/K
80
47
Ik
0.18 %/K
85
40 50
900 nm
600...1050 nm
–14
100 ns
100 ns
m
m
m
m
W/√ Hz
A
A
A
A
Typical Characteristics (T
5
10
4
10
3
10
2
10
1
10
ro
I – Reverse Dark Current ( nA )
0
10
Figure 1. Reverse Dark Current vs. Ambient Temperature
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2 (5) Rev. 2, 20-May-99
40 60 80
T
– Ambient Temperature ( °C )94 8463
amb
VR=10V
10020
= 25_C unless otherwise specified)
amb
1.5
1.4
VR=5V
l
=950nm
T
– Ambient Temperature ( °C )94 8464
amb
Ambient Temperature
120
1.3
1.2
1.1
1.0
0.9
ra rel
I – Relative Reverse Light Current
0.8
020406080
Figure 2. Relative Reverse Light Current vs.
120
100
Document Number 81535
Page 3
S153P
Vishay Telefunken
1000
m
100
10
1
ra
I – Reverse Light Current ( A )
VR=5V
l
=950nm
0.1
0.01 0.1 1
94 8465
Ee – Irradiance ( mW/cm2 )
10
Figure 3. Reverse Light Current vs. Irradiance
1000
m
100
10
VR=5V
1
ra
I – Reverse Light Current ( A )
0.1
1
10
2
10
E
– Illuminance ( lx )94 8466
A
3
10
4
10
Figure 4. Reverse Light Current vs. Illuminance
m
ra
I – Reverse Light Current ( A )
94 8467
100
10
l
=950nm
1
0.1 1 10
V
– Reverse Voltage ( V )
R
1mW/cm
0.5mW/cm
0.2mW/cm
0.1mW/cm
0.05mW/cm
2
2
2
2
2
100
Figure 5. Reverse Light Current vs. Reverse Voltage
80
E=0
f=1MHz
60
40
20
D
C – Diode Capacitance ( pF )
0
100
94 8407
0.1 1 10
VR – Reverse Voltage ( V )
Figure 6. Diode Capacitance vs. Reverse Voltage
1.0
0.8
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
1150
94 8420
350 550 750 950
l
– Wavelength ( nm )
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0°
10°20
°
30°
40°
1.0
0.9
0.8
rel
S – Relative Sensitivity
0.7
50°
60°
70°
80°
0.6
94 8475
0.4 0.2 0 0.2 0.4
0.6
Figure 8. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81535
Rev. 2, 20-May-99
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3 (5)
Page 4
S153P
Vishay Telefunken
Dimensions in mm
96 12181
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4 (5) Rev. 2, 20-May-99
Document Number 81535
Page 5
S153P
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 81535
Rev. 2, 20-May-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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